IXFH13N100 [IXYS]

HiPerFET Power MOSFETs; HiPerFET功率MOSFET


型号：	IXFH13N100
厂家：	IXYS CORPORATION
描述：	HiPerFET Power MOSFETs HiPerFET功率MOSFET
文件：	总4页 (文件大小：84K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HiPerFET^TM

V_DSS

I_D25R_DS(on)

IXFH/IXFM10N100

IXFH/IXFM12N100

IXFH13N100

1000V 10 A 1.20 W

1000V 12 A 1.05 W

1000V 12.5 A 0.90 W

t_rr£ 250 ns

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

TO-247 AD (IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

1000

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

10N100

12N100

13N100

10N100

12N100

13N100

10N100

12N100

13N100

12.5

TO-204 AA (IXFM)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

E_AR

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate,

S = Source,

D = Drain,

TAB = Drain

P_D

T_J

T_C= 25°C

300

-55 ... +150

°C

Features

T_JM

T_stg

150

-55 ... +150

°C

^●Internationalstandardpackages

^●Low R_{DS (on)}HDMOS^TMprocess

^●Rugged polysilicon gate cell structure

^●Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

M_d

1.13/10 Nm/lb.in.

^●Low package inductance

- easy to drive and to protect

^●Fast intrinsic Rectifier

Weight

TO-204 = 18 g, TO-247 = 6 g

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

●

DC-DC converters

Synchronousrectification

Battery chargers

Switched-modeandresonant-mode

●

min. typ. max.

●

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 4 mA

1000

2.0

powersupplies

V_GS(th)

4.5

●

DC choppers

^●AC motor control

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 mA

●

Temperatureandlightingcontrols

Low voltage relays

●

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

●

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

10N100

12N100

13N100

1.20

1.05

0.90

Easy to mount with 1 screw (TO-247)

(isolatedmountingscrewhole)

Space savings

High power density

●

Pulse test, t £ 300 ms, duty cycle d £ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

91531F(4/99)

1 - 4

IXFH 10N100 IXFH 12N100 IXFH 13N100

IXFM 10N100 IXFM 12N100

Symbol

g_fs

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-247 AD (IXFH) Outline

V_DS= 10 V; I_D= 0.5 • I_D25, pulse test

C_iss

C_oss

C_rss

4000

310

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 2 W (External),

62 100

32 50

Q_g(on)

Q_gs

122 155

Dim. Millimeter

Inches

Min. Max. Min. Max.

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

Q_gd

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

R_thJC

R_thCK

0.42 K/W

K/W

4.32 5.49 0.170 0.216

0.25

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

Source-DrainDiode

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

Symbol

I_S

TestConditions

1.5 2.49 0.087 0.102

V_GS= 0 V

10N100

12N100

13N100

12.5

TO-204 AA (IXFM) Outline

I_SM

Repetitive;

pulse width limited by T_JM

10N100

12N100

13N100

V_SD

I_F= I_S, V_GS= 0 V,

1.5

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t_rr

T_J= 25°C

T_J= 125°C

250 ns

400 ns

I_F= I_S

-di/dt = 100 A/ms,

V_R= 100 V

Q_RM

T_J= 25°C

T_J= 125°C

I_RM

T_J= 25°C

T_J= 125°C

Dim.

Millimeter

Inches

Min. Max.

38.61 39.12 1.520 1.540

19.43 19.94 0.785

6.40 9.14 0.252 0.360

0.97 1.09 0.038 0.043

1.53 2.92 0.060 0.115

30.15 BSC 1.187 BSC

10.67 11.17 0.420 0.440

5.21 5.71 0.205 0.225

16.64 17.14 0.655 0.675

11.18 12.19 0.440 0.480

3.84 4.19 0.151 0.165

25.16 25.90 0.991 1.020

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 4

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXFH 10N100 IXFH 12N100 IXFH 13N100

IXFM 10N100 IXFM 12N100

Fig. 1 Output Characteristics

Fig. 2 Input Admittance

T_J= 25°C

V_GS= 10V

T_J= 25°C

V_DS- Volts

V_GS- Volts

Fig. 3

R_DS(on)vs. Drain Current

Fig. 4

Temperature Dependence

of Drain to Source Resistance

1.5

1.4

1.3

1.2

1.1

1.0

0.9

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

T_J= 25°C

V_GS= 10V

I_D= 6A

V_GS= 15V

-50 -25

25 50 75 100 125 150

T_J- Degrees C

I_D- Amperes

Fig. 5 Drain Current vs.

Case Temperature

Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

V_GS(th)

BV_DSS

12N100

10N100

-50 -25

25 50 75 100 125 150

T_C- Degrees C

-50 -25

25 50 75 100 125 150

T_J- Degrees C

3 - 4

IXFH 10N100 IXFH 12N100 IXFH 13N100

IXFM 10N100 IXFM 12N100

Fig.7 Gate Charge Characteristic Curve

10µs

V_DS= 500V

I_D= 6A

I_G= 10mA

Limited by R_DS(on)

100µs

1ms

10ms

100ms

0.1

100

125

150

100

V_DS- Volts

1000

Gate Charge - nCoulombs

Fig.8 Capacitance Curves

Fig.9 Source Current vs. Source

to Drain Voltage

4500

4000

3500

3000

2500

2000

1500

1000

500

C_iss

f = 1MHz

V_DS= 25V

T_J= 125°C

T_J= 25°C

C_oss

C_rss

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V_DS- Volts

V_SD- Volts

Fig.10 Transient Thermal Impedance

0.1

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

0.01

0.001

Single Pulse

0.00001

0.0001

0.001

0.01

0.1

Time - Seconds

4 - 4

IXFH13N100 [IXYS]

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