IXFH130N15X3 [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFH130N15X3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 150V
ID25 = 130A
RDS(on) 9.0m
IXFA130N15X3
IXFP130N15X3
IXFH130N15X3
N-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXFA)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-220AB (IXFP)
TJ = 25C to 150C
150
150
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
D
D (Tab)
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
130
230
A
A
TO-247 (IXFH)
IA
TC = 25C
TC = 25C
65
A
J
EAS
1.2
G
D
S
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
D (Tab)
390
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1.5mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
150
V
2.5
4.5
V
Applications
100 nA
A
IDSS
5
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
TJ = 125C
300 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
7.6
9.0 m
Robotics and Servo Controls
DS100808B(10/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
50
82
S
RGi
1.8
Ciss
Coss
Crss
5230
920
14
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
585
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
1350
V
td(on)
tr
td(off)
tf
21
25
62
12
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 5 (External)
Qg(on)
Qgs
80
27
25
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.32 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
130
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
520
1.4
V
trr
QRM
IRM
80
230
5.7
ns
IF = 65A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
400
350
300
250
200
150
100
50
V
= 10V
V
= 10V
9V
GS
GS
120
100
80
60
40
20
0
8V
7V
9V
8V
7V
6V
5V
6V
5V
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 65A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
120
100
80
60
40
20
0
V
= 10V
GS
9V
8V
7V
6V
I
= 130A
D
I
= 65A
D
5V
4V
-50
-25
0
25
50
75
100
125
150
0.4
0.8
1.2
1.6
2
2.4
2.8
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 65A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
BV
DSS
T
= 125oC
J
V
GS(th)
T
J
= 25oC
50
100
150
200
250
300
350
400
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
140
120
100
80
180
160
140
120
100
80
V
= 10V
DS
60
T
J
= 125oC
25oC
60
40
- 40oC
40
20
20
0
0
-50
-25
0
25
50
75
100
125
150
3.5
0.3
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
160
400
350
300
250
200
150
100
50
V
= 10V
T
= - 40oC
J
DS
140
120
100
80
25oC
125oC
60
T
J
= 125oC
40
T
= 25oC
J
20
0
0
0.5
0.7
0.9
1.1
1.3
1.5
1.7
0
20
40
60
80
100
120
140
160
180
200
ID - Amperes
VSD - Volts
Fig. 11. Gate Charge
Fig. 12. Capacitance
10
8
100,000
10,000
1,000
100
V
= 75V
= 1 MHz
f
DS
I
I
= 65A
D
G
= 10mA
C
iss
6
4
C
C
oss
rss
2
0
10
0
10
20
30
40
50
60
70
80
10
100
1000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Output Capacitance Stored Energy
6
5
4
3
2
1
0
1000
100
10
R
Limit
)
DS(
on
100μs
1ms
T = 150oC
1
J
T
= 25oC
C
10ms
Single Pulse
DC
0.1
0
20
40
60
80
100
120
140
1
10
100
1000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_130N15X3 (25-S151) 6-29-17
IXFA130N15X3 IXFP130N15X3
IXFH130N15X3
TO-263 Outline
TO-247 Outline
TO-220 Outline
D
A
A
B
E
A2
Q
S
D2
P1
R
D1
D
4
1
2
3
L1
C
E1
1 = Gate
2 = Drain
3 = Source
4 = Drain
L
A1
b
C
b2
1 - Gate
2,4 - Drain
3 - Source
b4
e
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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