IXFH13N80Q [IXYS]
HiPerFET Power MOSFETs Q Class; HiPerFET功率MOSFET Q类
| 型号： | IXFH13N80Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q Class |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q Class
IXFH 13N80Q VDSS
IXFT 13N80Q ID25
= 800 V
13 A
= 0.70 W
=
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
trr £ 250 ns
Preliminary data sheet
TO-268 (D3) (IXFT) Case Style
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
G
S
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
13
52
13
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-247 AD (IXFH)
EAR
EAS
TC = 25°C
TC = 25°C
28
mJ
mJ
750
(TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
250
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
Md
1.13/10 Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
• IXYS advanced low Qg process
• Internationalstandardpackages
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast switching
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
800
2.5
V
V
• Molding epoxies meet UL94V-0
flammabilityclassification
4.5
±100
nA
Advantages
IDSS
TJ = 25°C
TJ = 125°C
50
1
mA
mA
• Easy to mount
• Space savings
• High power density
V
GS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
RDS(on)
0.70
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98626(6/99)
1 - 2
IXFH 13N80Q
IXFT 13N80Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
8
13
S
Ciss
Coss
Crss
3250
310
60
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
23
36
55
19
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 3.2 W (External)
Qg(on)
Qgs
90
20
30
nC
nC
nC
Dim. Millimeter
Inches
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Qgd
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
RthJC
RthCK
0.42
K/W
K/W
E
F
4.32 5.49 0.170 0.216
(TO-247)
0.25
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
K
1.0
1.4 0.040 0.055
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Symbol
IS
TestConditions
N
1.5 2.49 0.087 0.102
VGS = 0 V
13
52
A
ISM
Repetitive;
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
250
ns
mC
A
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.8
7.5
TO-268AA (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min. Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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IXYS
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