IXFH140N20X3 [LITTELFUSE]
Power Field-Effect Transistor,;![IXFH140N20X3](http://pdffile.icpdf.com/pdf2/p00306/img/icpdf/IXFH140N20X3_1843902_icpdf.jpg)
型号: | IXFH140N20X3 |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, |
文件: | 总7页 (文件大小:313K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Preliminary Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 200V
ID25 = 140A
RDS(on) 9.6m
IXFT140N20X3HV
IXFQ140N20X3
IXFH140N20X3
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV (IXFT)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-3P (IXFQ)
TJ = 25C to 150C
200
200
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
D
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
140
250
A
A
D (Tab)
TO-247 (IXFH)
IA
TC = 25C
TC = 25C
70
A
J
EAS
1.7
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
480
G
D
S
TJ
-55 ... +150
150
C
C
C
D (Tab)
D = Drain
TJM
Tstg
G = Gate
S = Source
-55 ... +150
Tab = Drain
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO-247 & TO-3P)
1.13 / 10
Nm/lb.in
Weight
TO-268HV
TO-3P
TO-247
4.0
5.5
6.0
g
g
g
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
High Power Density
Easy to Mount
Space Savings
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
200
V
V
2.5
4.5
100 nA
Applications
IDSS
10 A
500 A
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
8.0
9.6 m
DS100843C(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT140N20X3HV IXFQ140N20X3
IXFH140N20X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
55
94
S
RGi
1.6
Ciss
Coss
Crss
7660
1290
4.6
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
630
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
2000
V
td(on)
tr
td(off)
tf
28
20
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
130
12
RG = 5 (External)
Qg(on)
Qgs
127
39
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
32
RthJC
RthCS
0.26 C/W
C/W
TO-247& TO-3P
0.25
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
140
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
540
1.4
V
trr
QRM
IRM
105
420
8
ns
IF = 70A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT140N20X3HV IXFQ140N20X3
IXFH140N20X3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
140
120
100
80
450
400
350
300
250
200
150
100
50
V
= 10V
V
= 10V
9V
GS
GS
8V
7V
9V
8V
7V
60
6V
5V
40
6V
5V
20
0
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
2.8
2.4
2.0
1.6
1.2
0.8
0.4
140
120
100
80
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 140A
D
I
= 70A
D
60
40
5V
4V
20
0
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 70A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
= 10V
GS
BV
DSS
o
T = 125 C
J
o
T = 25 C
J
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
50
100
150
200
250
300
350
400
450
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT140N20X3HV IXFQ140N20X3
IXFH140N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
180
160
140
120
100
80
160
140
120
100
80
V
= 10V
DS
o
60
T
J
= 125 C
60
o
o
25 C
- 40 C
40
40
20
20
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
180
160
140
120
100
80
400
350
300
250
200
150
100
50
o
T = - 40 C
J
V
= 10V
DS
o
25 C
o
125 C
o
60
T = 125 C
J
40
o
T = 25 C
J
20
0
0
0
20
40
60
80
100
120
140
160
180
200
220
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Volts
ID - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 100V
DS
I
I
= 70A
D
G
C
iss
= 10mA
C
oss
rss
C
10
= 1 MHz
f
1
0
20
40
60
80
100
120
1
10
100
1,000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT140N20X3HV IXFQ140N20X3
IXFH140N20X3
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
100
10
12
10
8
R
DS(
on
Limit
)
25μs
100μs
6
4
1ms
1
o
T = 150 C
J
2
o
T
C
= 25 C
10ms
DC
Single Pulse
0
0.1
0
20
40
60
80
100
120
140
160
180
200
1
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.4
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYS REF: F_140N20X3 (26-S202) 6-15-17
IXFT140N20X3HV IXFQ140N20X3
IXFH140N20X3
TO-268HV Outline
PINS:
1 - Gate 2 - Source
3 - Drain
TO-247 Outline
D
A
A
TO-3P Outline
0P
+
B
O 0K M D B M
E
A2
A2
Q
S
D2
+
+
R
D1
D
0P1
4
1
2
3
ixys option
C
L1
E1
L
A1
b
b2
c
b4
PINS: 1 - Gate
e
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
Pins: 1 - Gate
2 - Drain
3 - Source 4 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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IXFH14N60P3
Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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