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IXFH30N85X [IXYS]

Power Field-Effect Transistor;
IXFH30N85X
型号： IXFH30N85X
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor
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中文：  中文翻译
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Advance Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 30A  
RDS(on) 220m  
IXFT30N85XHV  
IXFH30N85X  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-268HV (IXFT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
850  
850  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
30  
60  
A
A
G
D
IA  
TC = 25C  
TC = 25C  
15  
1
A
J
S
D (Tab)  
= Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
D
Tab = Drain  
695  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
V
Applications  
3.5  
5.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
25 A  
3 mA  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
220 m  
DS100760(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFT30N85XHV  
IXFH30N85X  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
11  
18  
S
RGi  
0.9  
Ciss  
Coss  
Crss  
2460  
2540  
30  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
104  
390  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
VDS = 0.8 • VDSS  
td(on)  
tr  
td(off)  
tf  
27  
30  
70  
14  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 3(External)  
Qg(on)  
Qgs  
68  
14  
40  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.18 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
30  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
150  
1.4  
V
trr  
QRM  
IRM  
160  
1.7  
21.0  
ns  
IF = 15A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFT30N85XHV  
IXFH30N85X  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
30  
25  
20  
15  
10  
5
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 30A  
D
I
= 15A  
D
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 15A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
T
J
= 125ºC  
BV  
DSS  
T
J
= 25ºC  
V
GS(th)  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFT30N85XHV  
IXFH30N85X  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
35  
30  
25  
20  
15  
10  
5
35  
30  
25  
20  
15  
10  
5
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
T
J
= 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
5
10  
15  
20  
25  
30  
35  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100,000  
10,000  
1,000  
100  
V
= 425V  
DS  
I
I
= 15A  
D
G
= 10mA  
C
C
iss  
6
oss  
4
2
10  
= 1 MHz  
f
C
rss  
0
1
0
10  
20  
30  
40  
50  
60  
70  
1
10  
100  
1000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFT30N85XHV  
IXFH30N85X  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
1
40  
35  
30  
25  
20  
15  
10  
5
R
Limit  
)
DS(  
on  
25µs  
100µs  
1ms  
10ms  
100ms  
0.1  
T
J
= 150ºC  
= 25ºC  
DC  
T
C
Single Pulse  
0
7000.01
0
100  
200  
300  
400  
500  
600  
800  
900  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2016 IXYS CORPORATION, All Rights Reserved  
IXFT30N85XHV  
IXFH30N85X  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
PINS:  
1 - Gate 2,4 - Source  
3 - Drain  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_30N85X(S6-D901) 11-01-16  

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