IXFK25N80_技术文档

Not for New Designs

V_DSS

I_D25

R_DS(on)

HiPerFET^TMPower MOSFETs

IXFK 27N80

800 V 27 A 0.30 Ω

800 V 25 A 0.35 Ω

800 V 27 A 0.30 Ω

800 V 25 A 0.35 Ω

IXFK 25N80

IXFN 27N80

IXFN 25N80

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, Lowt_rr

TO-264AA(IXFK)

Symbol

TestConditions

Maximum Ratings

IXFK

IXFN

V_DSS

V_DGR

T_J= 25°C to 150°C

800

V

T_J= 25°C to 150°C; R_GS= 1 MΩ

(TAB)

G

D

V_GS

Continuous

Transient

±20

±30

±20

±30

V

S

V_GSM

miniBLOC,SOT-227B(IXFN)

I_D25

I_DM

I_AR

T_C= 25°C, Chip capability

27N80 27

25N80 25

27

25

108

100

14

A

E153432

S

A

G

T_C= 25°C, pulse width limited by T_JM27N80 108

T_C= 25°C

D

25N80 100

27N80 14

25N80 13

G

13

S

E_AR

T_C= 25°C

30

5

30

5

mJ

S

D

S

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

,

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

P_D

T_C= 25°C

500

520

W

T_J

-55 ... +150

150

-55 ... +150

300

°C

T_JM

T_stg

Features

T_L

1.6 mm (0.063 in) from case for 10 s

-

°C

• International standard packages

• JEDECTO-264 AA,epoxymeet

UL 94 V-0, flammability classification

• miniBLOC, with Aluminium nitride

isolation

V_ISOL

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

-

2500

3000

V~

I

M_d

Mounting torque

Terminal connection torque

0.9/6

-

1.5/13 Nm/lb.in.

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Weight

Symbol

10

30

g

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

Applications

V_DSS

V_GS= 0 V, I_D= 3 mA

800

V

V_DSStemperature coefficient

0.096

%/K

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

V_GH(th)

V_DS= V_GS, I_D= 8 mA

2

4.5

V

V_GS(th)temperature coefficient

-0.214

%/K

• DC choppers

• Temperature and lighting controls

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

500 µA

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

2

mA

Advantages

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 µs,

duty cycle d ≤ 2 %

• Easy to mount

• Space savings

• High power density

25N80

27N80

0.35

0.30

Ω

95561D(6/02)

IXFK 25N80

IXFN 25N80

IXFK 27N80

IXFN 27N80

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

TO-264 AA Outline

min. typ. max.

V_DS= 10 V; I_D= 0.5 • I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

16

28

S

C_iss

C_oss

C_rss

7930 8400 9740

pF

630

146

712 790

192 240

t_d(on)

t_r

t_d(off)

t_f

30

80

75

40

ns

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 1 Ω (External),

Millimeter

Inches

Max.

.202

Dim.

Min.

Max.

Min.

.190

A

A1

A2

b

b1

b2

4.82

2.54

2.00

5.13

2.89

2.10

.100

.079

.114

.083

Q_g(on)

Q_gs

320

350 400

nC

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

V_GS= 10 V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D2538

120

46

56

c

0.53

25.91

19.81

0.83

26.16

19.96

.021

1.020

.780

.033

1.030

.786

Q_gd

130 142

D

E

e

R_thJC

R_thCK

TO-264AA

0.25 K/W

K/W

5.46BSC

.215BSC

J

0.00

0.25

.000

.010

TO-264AA

0.15

0.05

K

L

L1

P

20.32

2.29

20.83

2.59

.800

.090

.820

.102

R_thJC

R_thCK

miniBLOC, SOT-227 B

0.24 K/W

K/W

3.17

3.66

.125

.144

Q

Q1

6.07

8.38

6.27

8.69

.239

.330

.247

.342

R

R1

3.81

1.78

4.32

2.29

.150

.070

.170

.090

S

T

6.04

1.57

6.30

1.83

.238

.062

.248

.072

Source-DrainDiode

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

miniBLOC, SOT-227 B

Symbol

I_S

TestConditions

V_GS= 0 V

27N80

25N80

27

25

A

I_SM

Repetitive;

pulse width limited by T_JM25N80

27N80

108

100

A

V_SD

I_F= 100 A, V_GS= 0 V,

1.5

V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

M4 screws (4x) supplied

t_rr

I_F= I_S, -di/dt = 100 A/µs, V_R= 100 V T_J=25°C

250 ns

400 ns

µC

Dim.

Millimeter

Inches

T_J=125°C

T_J=25°C

Min.

Max.

Min.

Max.

Q_RM

I_RM

2

17

A

B

31.50

7.80

31.88

8.20

1.240

0.307

1.255

0.323

A

C

D

4.09

4.29

0.161

0.169

E

F

4.09

14.91

4.29

15.11

0.161

0.587

0.169

0.595

G

H

30.12

38.00

30.30

38.23

1.186

1.496

1.193

1.505

J

K

11.68

8.92

12.22

9.60

0.460

0.351

0.481

0.378

L

M

0.76

12.60

0.84

12.85

0.030

0.496

0.033

0.506

N

O

25.15

1.98

25.42

2.13

0.990

0.078

1.001

0.084

P

Q

4.95

26.54

5.97

26.90

0.195

1.045

0.235

1.059

R

S

3.94

4.72

4.42

4.85

0.155

0.186

0.174

0.191

T

U

24.59

-0.05

25.07

0.1

0.968

-0.002

0.987

0.004

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025

IXFK 25N80

IXFN 25N80

IXFK 27N80

IXFN 27N80

40

30

20

10

0

40

30

20

10

0

T_J= 125^OC

T_J= 25^OC

V

_GS= 9V

V_GS= 9V

8V

7V

6V

8V

7V

6V

5V

4V

5V

4V

0

4

8

12

16

20

0

2

4

6

8

10

V_DS- Volts

Figure 1. Output Characteristics at 25^OC

Figure 2. Output Characteristics at 125^OC

2.6

V_GS= 10V

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

V_GS= 10V

2.4

T_J= 125^OC

2.2

2.0

I_D= 27A

1.8

1.6

1.4

1.2

1.0

T_J= 25^OC

I_D= 13.5A

0

10

20

30

40

50

25

50

75

100

125

150

I_D- Amperes

T_J- Degrees C

Figure 4. R_DS(on)normalized to 0.5 I_D25value vs. T_J

Figure 3. R_DS(on)normalized to 0.5 I_D25value

vs. I_D

30

25

30

25

20

15

IXFN27N80

IXF_25N80

20

IXFK27N80

15

10

5

T_J= 125^oC

10

T_J= 25^oC

5

0

-50 -25

0

25 50 75 100 125 150

2

3

4

5

6

7

T_C- Degrees C

V_GS- Volts

Figure6. AdmittanceCurves

Figure5.DrainCurrentvs.CaseTemperature

IXFK 25N80

IXFN 25N80

IXFK 27N80

IXFN 27N80

12

10

8

10000

1000

100

Ciss

Coss

Crss

V_VDdSs==₃4₀0₀0_VV

I_D==3207AA

I_G==110mmA

f = 1MHz

6

4

2

0

100

200

300

400

500

0

5

10 15 20 25 30 35 40

Gate Charge - nC

V_DS- Volts

Figure7. GateCharge

Figure8.CapacitanceCurves

100

80

60

40

20

0

T_J= 125^OC

T_J= 25^OC

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V_SD- Volts

Figure 9. Forward Voltage Drop of the Intrinsic Diode

1

D=0.5

0.1

D=0.2

D=0.1

D=0.05

D=0.02

D = Duty Cycle

0.01

D=0.01

Single pulse

0.001

0.0001

0.001

0.01

0.1

1

10

Pulse Width - Seconds

Figure10.TransientThermalResistance

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715 6,306,728B1

5,381,025


型号：	IXFK25N80
厂家：	IXYS CORPORATION
描述：	HiPerFETTM Power MOSFETs HiPerFETTM功率MOSFET
文件：	总4页 (文件大小：164K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IXFK25N80 [IXYS]

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