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IXFP5N100P [IXYS]

Polar Power MOSFET HiPerFET; Polar功率MOSFET HiperFET
IXFP5N100P
型号： IXFP5N100P
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Polar Power MOSFET HiPerFET
Polar功率MOSFET HiperFET
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中文：  中文翻译
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Preliminary Technical Information  
PolarTM Power MOSFET  
IXFA5N100P  
IXFH5N100P  
IXFP5N100P  
VDSS = 1000V  
ID25 = 5A  
RDS(on) ≤ 2.8Ω  
HiPerFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-263 (IXFA)  
G
S
(TAB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TO-247 (IXFH)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
(TAB)  
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
5
A
A
10  
IA  
TC = 25°C  
TC = 25°C  
5
A
TO-220 (IXFP)  
EAS  
300  
mJ  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
250  
G
D
S
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
(TAB)  
TJM  
Tstg  
-55 ... +150  
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting torque  
(TO-220,TO-247)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z Dynamic dv/dt Rating  
z Avalanche Rated  
z Low RDS(ON), rugged PolarTM process  
z Low QG  
z Low Drain-to-Tab capacitance  
z Low package inductance  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z
Easy to mount  
Space savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±30V, VDS = 0V  
1000  
V
V
z
3.0  
6.0  
Applications:  
±100 nA  
z DC-DC converters  
z Battery chargers  
IDSS  
VDS = VDSS  
VGS = 0V  
10 μA  
750 μA  
z Switched-mode and resonant-mode  
power supplies  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.8  
Ω
z Uninterrupted power supplies  
z AC motor control  
z High speed power switching  
applications  
DS99923(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFA5N100P IXFH5N100P  
IXFP5N100P  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max  
gfs  
VDS= 20V, ID = 0.5 • ID25, Note 1  
2.4  
4.0  
1.6  
S
RGi  
Gate input resistance  
Ω
Ciss  
Coss  
Crss  
1830  
113  
20  
pF  
pF  
pF  
∅ P  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
12  
13  
30  
37  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 5Ω (External)  
Dim.  
Millimeter  
Inches  
Qg(on)  
Qgs  
33.4  
10.6  
14.4  
nC  
nC  
nC  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
0.50 °C/W  
RthCS  
RthCS  
(TO-220)  
(TO-247)  
0.50  
0.25  
°C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
∅P 3.55  
Q
3.65  
.140 .144  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
VGS = 0V  
5
A
A
V
6.15 BSC  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
20  
1.3  
TO-220 (IXFP) Outline  
VSD  
trr  
200  
ns  
A
IF = 5A, VGS = 0V  
IRM  
QRM  
7.4  
-di/dt = 100A/μs  
VR = 100V  
0.43  
μC  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-263 (IXFA) Outline  
Pins: 1 - Gate  
2 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463 6,771,478B2 7,071,537  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
IXFA5N100P IXFH5N100P  
IXFP5N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
VGS = 10V  
8V  
VGS = 10V  
9V  
8V  
7V  
7V  
6V  
6V  
5V  
0
2
4
6
8
10  
12  
14  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 2.5A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
5.0  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
8V  
VGS = 10V  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7V  
I D = 5A  
I D = 2.5A  
6V  
5V  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 2.5A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
1
2
3
4
5
6
7
8
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFA5N100P IXFH5N100P  
IXFP5N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.2  
40  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
10  
9
8
7
6
5
4
3
2
1
0
VDS = 500V  
I D = 2.5A  
I G = 10mA  
6
TJ = 125ºC  
TJ = 25ºC  
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1.00  
0.10  
0.01  
f
= 1 MHz  
C
iss  
1,000  
100  
10  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_5N100P(55-744)6-27-08  

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