IXFR24N100Q3 [IXYS]
Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN;
| 型号： | IXFR24N100Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiperFETTM
Power MOSFET
Q3-Class
VDSS = 1000V
ID25 = 18A
IXFR24N100Q3
RDS(on) ≤ 490mΩ
trr
≤ 300ns
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
ISOPLUS247
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
G
Isolated Tab
D
S
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
18
60
A
A
G = Gate
S = Source
D
= Drain
IA
EAS
TC = 25°C
TC = 25°C
24
2
A
J
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
500
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
z
z
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z
z
z
z
VISOL
50/60 Hz, 1 Minute
Mounting Force
2500
V∼
Avalanche Rated
FC
20..120/4.5..27
5
N/lb.
g
Low Package Inductance
Weight
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
1000
3.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
6.5
z
z
±200 nA
Power Supplies
DC Choppers
Temperature and Lighting Controls
IDSS
25 μA
1.5 mA
z
TJ = 125°C
z
RDS(on)
VGS = 10V, ID = 12A, Note 1
490 mΩ
DS100394(10/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFR24N100Q3
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 12A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
14
24
S
Ciss
Coss
Crss
7200
590
50
pF
pF
pF
RGi
0.18
38
Ω
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
tr
24
45
ns
ns
td(off)
1 = Gate
tf
14
ns
2,4 = Drain
3 = Source
Qg(on)
Qgs
140
47
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
Qgd
60
RthJC
RthCS
0.25 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
24
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
96
1.4
trr
QRM
IRM
300 ns
IF = 12A, -di/dt = 100A/μs
1.9
12.4
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFR24N100Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
24
20
16
12
8
VGS = 10V
VGS = 10V
50
40
30
20
10
0
8V
8V
7V
6V
4
7V
6V
0
0
0
0
1
2
3
4
5
6
7
8
9
10
22
55
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
VGS = 10V
7V
I D = 24A
I D = 12A
6V
5V
4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
18
16
14
12
10
8
VGS = 10V
TJ = 125ºC
TJ = 25ºC
6
4
2
0
-50
-25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFR24N100Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
TJ = - 40ºC
25ºC
TJ = 125ºC
25ºC
125ºC
- 40ºC
0
4
0.3
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
5
10
15
20
25
30
35
40
45
50
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
80
70
60
50
40
30
20
10
0
VDS = 500V
I D = 12A
I G = 10mA
TJ = 125ºC
6
TJ = 25ºC
4
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
50
100
150
200
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100
10
1
100,000
10,000
1,000
100
= 1 MHz
f
RDS(on) Limit
25µs
100µs
C
iss
oss
rss
C
1ms
C
TJ = 150ºC
TC = 25ºC
Single Pulse
10
0.1
5
10
15
20
25
30
35
40
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFR24N100Q3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_24N100Q3(R8) 10-12-11
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