IXFX48N55 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFX48N55 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
VDSS = 550 V
IXFK 48N55
IXFX 48N55
ID25 = 48 A
RDS(on)= 110mW
Single MOSFET Die
Avalanche Rated
trr £ 250 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
PLUS 247TM (IXFK)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
550
550
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
G
D
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
48
192
44
A
A
A
TO-264 AA (IXFK)
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
(TAB)
G
D
S
PD
TJ
TC = 25°C
560
W
-55 ... +150
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Features
• Internationalstandardpackages
Md
Mountingtorque
TO-264
0.9/6 Nm/lb.in.
• Low RDS (on) HDMOSTM process
Weight
PLUS 247
TO-264
6
g
g
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
10
• Lowpackageinductance
- easy to drive and to protect
• Fastintrinsicrectifier
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
550
2.5
V
VGS(th)
IGSS
VDS = VGS, ID = 8mA
4.5 V
• ACmotorcontrol
• Temperatureandlightingcontrols
VGS = ±20 V, VDS = 0
±200nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
• PLUS 247TM package for clip or spring
mounting
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
110 mW
• Space savings
• Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98712(3/24/00)
1 - 2
IXFK 48N55
IXFX 48N55
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM (IXFX) Outline
VDS = 10 V; ID = 0.5 • ID25
Note 1
30
40
S
Ciss
Coss
Crss
8900
1000
330
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
42
55
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
110
45
Dim.
Millimeter
Inches
Min. Max. Min. Max.
Qg(on)
Qgs
330
60
nC
nC
nC
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
65
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
RthJC
RthCK
0.22 K/W
K/W
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-264 AA Outline
Symbol
TestConditions
IS
VGS = 0 V
48
A
A
ISM
Repetitive;
192
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.3
V
trr
250 ns
IF = IS, -di/dt = 100 A/ms, VR = 100 V
QRM
IRM
1.4
8
mC
A
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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