IXGA12N100AU1 [IXYS]

IGBT - Combi Pack; IGBT - Combi机包


型号：	IXGA12N100AU1
厂家：	IXYS CORPORATION
描述：	IGBT - Combi Pack IGBT - Combi机包晶体晶体管功率控制双极性晶体管栅
文件：	总4页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V_CES

I_C25

V_CE(sat)

IGBT

IXGA/IXGP12N100U1

1000 V

24 A

3.5 V

4.0 V

Combi Pack

IXGA/IXGP12N100AU1 1000 V

Preliminary Data Sheet

TO-220AB(IXGP)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-263 AA (IXGA)

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 150 W

Clamped inductive load, L = 300 mH

I_CM= 24

C (TAB)

(RBSOA)

@ 0.8 V_CES

P_C

T_C= 25°C

100

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

• Internationalstandardpackages

JEDEC TO-220AB and TO-263AA

• IGBT with antiparallel FRED in one

package

-55 ... +150

M_d

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

• Second generation HDMOS^TMprocess

• Low V_CE(sat)

Weight

- forminimumon-stateconduction

losses

• MOS Gate turn-on

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- drive simplicity

• Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

Symbol

TestConditions

CharacteristicValues

Applications

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switch-modeandresonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 3 mA, V_GE= 0 V

1000

2.5

I_C= 250 mA, V_GE= V_GE

5.5

I_CES

V_CE= 0.8, V_CES

V_GE= 0 V

T_J= 25°C

300

T_J= 125°C

Advantages

• Easy to mount with one screw

• Space savings (two devices in one

package)

• Reduces assembly time and cost

• High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

V_CE(sat)

I_C= I_CE90, V_GE= 15

12N100

12N100A

3.5

4.0

IXYS reserves the right to change limits, test conditions, and dimensions.

95592A (3/97)

1 - 4

IXGA12N100U1

IXGA12N100AU1

IXGP12N100U1

IXGP12N100AU1

Symbol

TestConditions

CharacteristicValues

Min. Typ. Max.

TO-220 AB (IXGP) Outline

(T_J= 25°C, unless otherwise specified)

g_fs

I_C= I_C90; V_CE= 10 V,

Pulse test, t £ 300 ms, duty cycle £ 2 %

Q_g

Q_ge

Q_gc

I_C= I_C90, V_GE= 15 V, V_CE= 0.5 V_CES

t_d(on)

t_ri

t_d(off)

t_fi

100

200

Inductive load, T_J= 25°C

I_C= I_C90, V_GE= 15 V, L = 300 mH

V_CE= 800 V, R_G= R_off= 120 W

Remarks: Switching times may

850 1000

500 700

800 1000

12N100A

12N100

increase for V_CE(Clamp) > 0.8 V_CES

higher T_Jor increased R_G

Dim.

Millimeter

Inches

E_off

12N100A

Min. Max.

12.70 13.97 0.500 0.550

14.73 16.00 0.580 0.630

t_d(on)

t_ri

100

200

1.1

Inductive load, T_J= 125°C

9.91 10.66 0.390 0.420

I_C= I_C90, V_GE= 15 V, L = 300 mH

V_CE= 800 V, R_G= R_off= 120 W

Remarks: Switching times may

increase for V_CE(Clamp) > 0.8 V_CES

higher T_Jor increased R_G

3.54

4.08 0.139 0.161

E_on

t_d(off)

t_fi

5.85

2.54

6.85 0.230 0.270

3.18 0.100 0.125

900

950

1250

12N100A

12N100

12N100A

12N100

1.15

2.79

1.65 0.045 0.065

5.84 0.110 0.230

0.64

1.01 0.025 0.040

E_off

2.54 BSC 0.100 BSC

4.32

1.14

4.82 0.170 0.190

1.39 0.045 0.055

0.35

2.29

0.56 0.014 0.022

2.79 0.090 0.110

R_thJC

R_thCK

1.25 K/W

K/W

0.25

TO-263 AA (IXGA) Outline

Reverse Diode (FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

V_F

I_F=8A, V_GE= 0 V,

2.75

Pulse test, t £ 300 ms, duty cycle d £ 2 %

I_RM

t_rr

I_F= I_C90, V_GE= 0 V, -di_F/dt = 100 A/ms

V_R= 100 V, T_J= 125°C

6.5

140

I_F= 1 A, -di/dt = 50 A/ms, V_R= 30 V T_J= 25°C

R_thJC

2.5 K/W

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

4.06

2.03

4.83

2.79

.160 .190

.080 .110

0.51

1.14

0.99

1.40

.020 .039

.045 .055

Min. Recommended Footprint

0.46

1.14

0.74

1.40

.018 .029

.045 .055

8.64

7.11

9.65

8.13

.340 .380

.280 .320

9.65

6.86

2.54

10.29

8.13

BSC

.380 .405

.270 .320

.100 BSC

14.61

2.29

1.02

1.27

15.88

2.79

1.40

1.78

0.38

.575 .625

.090 .110

.040 .055

.050 .070

.015

0.46

0.74

.018 .029

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

2 - 4

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,486,715

5,381,025

IXGA12N100U1

IXGA12N100AU1

IXGP12N100U1

IXGP12N100AU1

100

V_GE= 15V

T_J= 25°C

V_GE= 15V

13V

11V

13V

11V

V_CE- Volts

Figure 2. Extended Output Characteristics

V_CE- Volts

Figure 1. Saturation Voltage Characteristics

1.6

V_GE= 15V

T_J= 125°C

V_GE= 15V

I_C= 24A

13V

1.4

1.2

1.0

0.8

0.6

11V

_C= 12A

I_C= 6A

100

125

150

V_CE- Volts

T_J- Degrees C

Figure 3. Saturation Voltage Characteristics

Figure 4. Temperature Dependence of V_CE(sat)

1000

V_CE= 10V

f = 1Mhz

iss

T_J= 25°C

oss

T_J= 125°C

100

rss

10 15 20 25 30 35 40

V_GE- Volts

Figure 5. Admittance Curves

V_CE-Volts

Figure 6. Capacitance Curves

3 - 4

IXGA12N100U1

IXGA12N100AU1

IXGP12N100U1

IXGP12N100AU1

1200

1100

1000

900

1000

800

600

400

T_J= 125°C

R_G= 120

T_J= 125°C

t_fi

I_C= 12A

E_(OFF)

200

800

I_C- Amperes

R_G- Ohms

Figure 8. Dependence of tfi and E_OFFon R_G.

120

150

Figure 7. Dependence of tfi and E_OFFon I_C.

100

I_C= 30A

V_CE= 150V

T_J= 125°C

R_G= 4.7

dV/dt < 5V/ns

0.1

200

400

600

800

1000

V_CE- Volts

Q_g- nanocoulombs

Figure 9. Gate Charge

Figure 10. Turn-off Safe Operating Area

0.1

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

D = Duty Cycle

Single pulse

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

Figure 11. Transient Thermal Resistance

4 - 4

IXGA12N100AU1 [IXYS]

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