IXGA24N120C3 [IXYS]
GenX3 1200V IGBT; GenX3 1200V IGBT
| 型号： | IXGA24N120C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 1200V IGBT |
| 文件： | 总6页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
GenX3TM 1200V IGBT
VCES = 1200V
IC25 = 48A
VCE(sat) ≤ 4.2V
tfi(typ) = 110ns
IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
High speed PT IGBTs for
10-50kHz Switching
TO-263 (IXGA)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
1200
1200
V
V
G
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C (TAB)
IC25
IC100
ICM
TC = 25°C
TC = 100°C
TC = 25°C, 1ms
48
24
96
A
A
A
TO-247 (IXGH)
IA
TC = 25°C
TC = 25°C
20
A
EAS
250
mJ
G
C (TAB)
SSOA
VGE= 15V, TJ = 125°C, RG = 5Ω
Clamped inductive load @VCE ≤ 1200V
ICM = 48
A
C
E
(RBSOA)
PC
TC = 25°C
250
W
TO-220 (IXGP)
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Md
Mounting torque
1.13/10
Nm/lb.in.
C (TAB)
G
TL
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
300
260
°C
°C
C
E
TSOLD
Weight
TO-263
TO-247
TO-220
2.5
6.0
3.0
g
g
g
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Symbol
Test Conditions
Characteristic Values
z International standard packages:
JEDEC TO-247AD
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
z MOS Gate turn-on
- drive simplicity
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
1200
2.5
V
V
5.0
z Avalanche rated
ICES
VCE = VCES
VGE = 0V
100 μA
1.5 mA
TJ = 125°C
TJ = 125°C
Applications
z
IGES
VCE = 0V, VGE = ±20V
±100
4.2
nA
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
z
VCE(sat)
IC = 20A, VGE = 15V, Note 2
3.6
3.1
V
V
z
z
z
Switch-mode and resonant-mode
power supplies
DS99851A(01/08)
© 2008 IXYS CORPORATION, All rights reserved
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) AD Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 24A, VCE = 10V, Note 2
VCE = 25V, VGE = 0V, f = 1MHz
10
17
S
Cies
Coes
Cres
1900
125
52
pF
pF
pF
Qg
79
12
36
nC
nC
nC
Qge
Qgc
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
16
27
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
Eon
td(off)
tfi
1.16
93
1 = Gate
VCE = 600V, RG = 5Ω
Note 1
2 = Collector
3 = Emitter
Tab = Collector
110
Eoff
0.47
0.85 mJ
td(on)
tri
16
35
ns
Inductive load, TJ = 125°C
ns
mJ
IC = 20A, VGE = 15V
Eon
td(off)
tfi
2.18
125
305
1.18
VCE = 600V, RG = 5Ω
Note 1
ns
ns
Eoff
2.00 mJ
RthJC
RthCK
0.50 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
TO-220 (IXGP) Outline
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG.
,
2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXGA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
140
120
100
80
50
45
40
35
30
25
20
15
10
5
VGE = 15V
VGE = 15V
13V
11V
13V
11V
9V
7V
60
9V
7V
40
20
5V
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VCE - Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
50
45
40
35
30
25
20
15
10
5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
11V
VGE = 15V
I C = 48A
9V
7V
I C = 24A
I C = 12A
5V
0
-50
-25
0
25
50
75
100
125
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
60
55
50
45
40
35
30
25
20
15
10
5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
TJ = 25ºC
TJ = - 40ºC
25ºC
125ºC
I C = 48A
24A
12A
0
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
I
C = 24A
I G = 10 mA
25ºC
125ºC
6
4
6
4
2
2
0
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
IC - Amperes
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
55
50
45
40
35
30
25
20
15
10
5
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 5
Ω
dV / dt < 10V / ns
C
res
0
10
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3(4N)01-15-08C
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
E
E
on - - - -
off
RG = 5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGE = 15V
,
Ω
I C = 20A
VCE = 600V
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
TJ = 125ºC
VCE = 600V
I C = 10A
TJ = 25ºC
10
11
12
13
14
15
16
17
18
19
20
4
6
8
10
12
14
16
18
20
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
360
340
320
300
280
260
240
220
200
400
360
320
280
240
200
160
120
80
E
E
on - - - -
VGE = 15V
,
off
RG = 5
tf
td(off
) - - - -
Ω
TJ = 125ºC, VGE = 15V
CE = 600V
I C = 20A
VCE = 600V
V
I C = 20A
I C = 10A
I C = 10A
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
380
340
300
260
220
180
140
100
60
130
125
120
115
110
105
100
95
350
300
250
200
150
100
50
140
130
120
110
100
90
tf
td(off) - - - -
RG = 5 , VGE = 15V
Ω
VCE = 600V
TJ = 125ºC
I C = 20A
tf
td(off
) - - - -
RG = 5 , VGE = 15V
Ω
VCE = 600V
I C = 10A
TJ = 25ºC
90
20
85
80
10
11
12
13
14
15
16
17
18
19
20
25
35
45
55
65
75
85
95 105 115 125
IC - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXGA24N120C3 IXGH24N120C3
IXGP24N120C3
Fig. 19. Inductive Turn-on
Fig. 18. Inductive Turn-on
Switching Times vs. Collector Current
Switching Times vs. Gate Resistance
42
38
34
30
26
22
18
14
10
17.5
60
55
50
45
40
35
30
25
20
15
10
23
22
21
20
19
18
17
16
15
14
13
tr
td(on) - - - -
I C = 20A
tr
td(on) - - - -
VGE = 15V
17.0
16.5
16.0
15.5
15.0
14.5
14.0
13.5
TJ = 125ºC, VGE = 15V
RG = 5
,
Ω
VCE = 600V
VCE = 600V
TJ = 125ºC, 25ºC
I C = 10A
4
6
8
10
12
14
16
18
20
10
11
12
13
14
15
16
17
18
19
20
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
40
35
30
25
20
15
10
19
18
17
16
15
14
13
tr
td(on) - - - -
VGE = 15V
RG = 5
,
Ω
VCE = 600V
I C = 20A
I C = 10A
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_24N120C3(4N)01-15-08-C
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