IXGH72N60C3 [IXYS]
GenX3 600V IGBT; GenX3 600V IGBT
| 型号： | IXGH72N60C3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | GenX3 600V IGBT |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GenX3TM 600V IGBT
IXGH72N60C3
VCES = 600V
IC110 = 72A
VCE(sat) ≤ 2.5V
tfi (typ) = 55ns
High-Speed PT IGBT for
40-100kHz Switching
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
Tab
E
IC25
IC110
ICM
TC = 25°C (Limited by Leads)
TC = 110°C (Chip Capability)
TC = 25°C, 1ms
75
72
360
A
A
A
G = Gate
C
= Collector
E = Emitter
Tab = Collector
IA
TC = 25°C
TC = 25°C
50
A
EAS
500
mJ
SSOA
VGE= 15V, TVJ = 125°C, RG = 2Ω
ICM = 150
A
(RBSOA)
Clamped Inductive Load
VCE ≤ VCES
Features
PC
TC = 25°C
540
W
z Optimized for Low Switching Losses
z Square RBSOA
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
z Avalanche Rated
-55 ... +150
z International Standard Package
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
z High Power Density
z Low Gate Drive Requirement
Weight
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z High Frequency Power Inverters
z UPS
BVCES
IC = 250μA, VGE = 0V
600
V
V
z Motor Drives
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.5
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
VCE = VCES, VGE = 0V
50 μA
mA
±100 nA
TJ = 125°C
TJ = 125°C
1
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 50A, VGE = 15V
2.10
1.65
2.50
V
V
© 2009 IXYS CORPORATION, All Rights Reserved
DS99961B(11/09)
IXGH72N60C3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
33
55
S
Cies
Coes
Cres
4780
330
pF
pF
pF
∅ P
1
2
3
117
Qg
Qge
Qgc
174
33
nC
nC
nC
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
72
e
td(on)
tri
Eon
td(off)
tfi
27
37
ns
ns
Inductive Load, TJ = 25°C
Terminals: 1 - Gate
2 - Collector
Tab - Collector
3 - Emitter
1.03
77
mJ
ns
IC = 50A, VGE = 15V
Dim.
Millimeter
Inches
Min. Max.
130
110
0.95
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
55
ns
VCE = 480V, RG = 2Ω, Note 2
Eoff
0.48
mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
td(on)
tri
26
36
ns
ns
Inductive Load, TJ = 125°C
Eon
td(off)
tfi
1.48
120
124
0.93
mJ
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
IC = 50A, VGE = 15V
20.80 21.46
15.75 16.26
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
VCE = 480V, RG = 2Ω, Note 2
.780 .800
.177
Eoff
mJ
∅P 3.55
3.65
.140 .144
RthJC
RthCK
0.23 °C/W
°C/W
Q
5.89
6.40 0.232 0.252
0.21
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH72N60C3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
100
90
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
VGE = 15V
13V
VGE = 15V
13V
11V
11V
9V
9V
7V
7V
5V
5V
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
2
4
6
8
10
12
14
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
JunctionTemperature
Fig. 3. Output Characteristics @ TJ = 125ºC
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
VGE = 15V
13V
11V
9V
I C = 100A
I C = 50A
7V
5V
I C = 25A
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
TJ = 25ºC
TJ = 125ºC
25ºC
- 40ºC
I C = 100A
50A
25A
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60C3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
TJ = - 40ºC
VCE = 300V
I C = 50A
I G = 10mA
25ºC
125ºC
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
160
180
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
160
140
120
100
80
10,000
1,000
100
C
ies
C
oes
res
60
C
40
TJ = 125ºC , RG = 2Ω
dv / dt < 10V / ns
= 1 MHz
f
20
0
10
100
200
300
400
VCE - Volts
500
600
0
5
10
15
20
25
30
35
40
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGH72N60C3
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
E
E
on - - - -
off
E
E
on - - - -
off
RG = 2
TJ = 125ºC , VGE = 15V
VCE = 480V
VGE = 15V
Ω ,
VCE = 480V
I C = 100A
TJ = 125ºC, 25ºC
I C = 50A
20
30
40
50
60
70
80
90
100
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
190
180
170
160
150
140
130
120
110
100
90
500
450
400
350
300
250
200
150
100
50
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.6
4.8
4.0
3.2
2.4
1.6
0.8
0.0
t f
td(off) - - - -
E
E
on - - - -
off
RG = 2ꢀ VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 480V
,
VCE = 480V
I C = 100A
I C = 100A
I C = 50A
I C = 50A
0
25
35
45
55
65
75
85
95
105
115
125
2
3
4
5
6
7
8
9
10 11 12 13 14 15
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
160
140
120
100
80
125
115
105
95
180
160
140
120
100
80
150
t f
t
d(off) - - - -
tf
t
d(off) - - - -
140
130
120
110
100
90
RG = 2ꢀ , VGE = 15V
RG = 2Ω , VGE = 15V
VCE = 480V
VCE = 480V
TJ = 125ºC
I
= 100A
C
I
= 50A
C
85
60
TJ = 25ºC
60
75
40
80
20
70
40
65
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXGH72N60C3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
160
140
120
100
80
60
55
50
45
40
35
30
25
110
100
90
80
70
60
50
40
30
20
10
38
36
34
32
30
28
26
24
22
20
18
tr
td(on)
- - - -
tr
td(on)
- - - -
TJ = 125ºC, VGE = 15V
VCE = 480V
RG = 2ꢀ , VGE = 15V
VCE = 480V
I C = 100A
TJ = 25ºC, 125ºC
60
40
I C = 50A
20
2
3
4
5
6
7
8
9
10
11
12
13
14
15
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
120
110
100
90
35
34
33
32
31
30
29
28
27
26
25
t r
t
d(on) - - - -
RG = 2Ω , VGE = 15V
VCE = 480V
80
I C = 100A
70
60
50
40
30
I C = 50A
20
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_72N60C3(8D)11-25-09-C
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