IXGR39N60B [IXYS]

Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN;
IXGR39N60B
型号: IXGR39N60B
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

电动机控制 栅 晶体管
文件: 总2页 (文件大小:514K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HiPerFASTTM IGBT  
VCES = 600 V  
IC25 = 66 A  
VCE(sat) = 1.8 V  
tfi(typ) = 200 ns  
IXGR 39N60B  
IXGR 39N60BD1  
ISOPLUS247TM  
(Electrically Isolated Backside)  
Preliminary data sheet  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
66  
35  
152  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
I
= 76  
A
(RBSOA)  
CGlaE mped indVuJctive load, L = 100 µH  
@ 0C.8M VCES  
* Patent pending  
PC  
TC = 25°C  
140  
W
VISOL  
50/60 Hz RMS t = 1 minute  
2500  
V
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
DCB Isolated mounting tab  
z
z
z
z
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
- drive simplicity  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Weight  
Symbol  
5
g
Applications  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z
Uninterruptible power supplies (UPS)  
Min. Typ. Max.  
z
Switched-mode and resonant-mode  
BVCES  
VGE(th)  
ICES  
I
= 250 µA, VGE = 0 V  
39N60B  
600  
600  
V
ICC = 750 µA  
39N60BD1  
power supplies  
z
AC motor speed control  
z
I
= 250 µA, VCE = VGE  
39N60B  
2.5  
5.0  
5.0  
V
V
DC servo and robot drives  
DC choppers  
ICC = 500 µA  
39N60BD1 2.5  
z
VCE = 0.8 • VCES TJ = 25°C  
VGE = 0 V; note 1 TJ = 25°C  
TJ = 125°C  
39N60B  
200 µA  
650 µA  
39N60BD1  
39N60B  
Advantages  
1
3
mA  
mA  
TJ = 125°C  
39N60BD1  
z Easy assembly  
z
High power density  
Very fast switching speeds for high  
frequency applications  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
1.8  
z
VCE(sat)  
IC = IT, VGE = 15 V  
V
© 2004 IXYS All rights reserved  
DS98738B(01/04)  
IXGR 39N60B  
IXGR 39N60BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
gfs  
IC = IT; VCE = 10 V,  
Pulse test, t 300 µs, duty cycle 2 %  
19  
S
Cies  
2750  
200  
pF  
pF  
pF  
39N60B  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60BD1 250  
50  
pF  
Qg  
125  
nC  
nC  
nC  
Qge  
Qgc  
IC = IT, VGE = 15 V, VCE = 0.5 VCES  
25  
40  
1 Gate, 2 Drain (Collector)  
3 Source (Emitter)  
td(on)  
tri  
td(off)  
tfi  
25  
ns  
ns  
ns  
ns  
4 no connection  
Inductive load, TJ = 25°C  
30  
IC = IT, VGE = 15 V  
Dim.  
Millimeter  
Inches  
250 500  
200 360  
Min.  
Max. Min. Max.  
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω  
A
4.83  
2.29  
1.91  
1.14  
1.91  
2.92  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
A
A12  
Eoff  
4.0  
6.0 mJ  
b
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
b12  
td(on)  
tri  
25  
30  
ns  
ns  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
Inductive load, TJ = 125°C  
20.80 21.34  
15.75 16.13  
IC = IT, VGE = 15 V  
Eon  
td(off)  
tfi  
39N60B  
0.3  
mJ  
mJ  
ns  
e
5.45 BSC  
.215 BSC  
.780 .800  
.150 .170  
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω  
39N60BD1 1.0  
L
19.81 20.32  
L1  
3.81  
4.32  
Remarks: Switching times may increase  
for V (Clamp) > 0.8 • VCES, higher TJ or  
increCaEsed RG  
360  
350  
6.0  
Q
5.59  
6.20  
.220 .244  
R
4.32  
4.83  
.170 .190  
ns  
Eoff  
mJ  
Please see IXGH 39N60B data  
sheet for characteristic curves.  
RthJC  
RthCK  
0.9 K/W  
K/W  
0.15  
ReverseDiode(FRED)(IXGR39N60BD1only)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = 30A, VGE = 0 V,  
Note 1  
TJ = 150°C  
1.6  
2.5  
V
V
IRM  
I = 50A, VGE = 0 V, VR = 100 V TJ = 100°C  
-FdiF/dt = 100 A/µs  
2.5  
175  
25  
A
ns  
ns  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
RthJC  
1.1 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  

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