IXGX50N90B2D1 [IXYS]
HiPerFAST IGBT with Fast Diode; HiPerFAST IGBT与二极管快
| 型号： | IXGX50N90B2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBT with Fast Diode |
| 文件： | 总7页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM
IGBT with Fast
Diode
IXGH 50N90B2D1
IXGK 50N90B2D1
IXGX 50N90B2D1
VCES
IC25
= 900 V
= 75 A
VCE(sat) = 2.7 V
tfityp
= 200 ns
B2-Class High Speed IGBT
with Fast Diode
PreliminaryDataSheet
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
900
900
V
TJ = 25°C to 150°C; RGE = 1 MΩ
V
TAB)
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C (limited by leads)
TC = 110°C
75
50
A
A
A
PLUS247 (IXGX)
TC = 25°C, 1 ms
200
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600V
ICM = 100
A
TAB)
(RBSOA)
G
C
E
PC
TC = 25°C
400
W
TJ
-55 ... +150
150
°C
°C
°C
TO-264 (IXGK)
TJM
Tstg
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
G
D
S
C (TAB)
Md
Mounting torque (TO-247, TO-264)
1.13/10Nm/lb.in.
FC
Mounting force (PLUS247)
20..120 / 4.5..25
N/lb
G = Gate
E=Emitter
C = Collector
TAB = Collector
Weight
TO-247
TO-264
PLUS247
6
10
6
g
g
g
Features
ꢀ
High frequency IGBT
High current handling capability
MOS Gate turn-on
ꢀ
ꢀ
Symbol
TestConditions
Characteristic Values
min. typ. max.
- drive simplicity
(TJ = 25°C unless otherwise specified)
Applications
ꢀ
VGE(th)
IC = 250 μA, VCE = VGE
3.0
5.0
V
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
ꢀ
ꢀ
ICES
VCE = VCES
VGE = 0 V
50
1
μA
mA
TJ = 150°C
TJ = 125°C
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
ꢀ
IGES
VCE = 0 V, VGE = ± 20 V
± 100
nA
ꢀ
ꢀ
VCE(sat)
IC = IC110, VGE = 15 V, Note 1
2.2
2.7
V
V
Advantages
ꢀ
High power density
Very fast switching speeds for high
ꢀ
frequency applications
DS99393(01/06)
© 2006 IXYS All rights reserved
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Symbol
TestConditions
Characteristic Values
min. typ. max.
(TJ = 25°C unless otherwise specified)
gfs
IC
= IC110 ; VCE = 10 V, Note 1
25
40
S
Cies
Coes
Cres
2500
205
75
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
135
23
nC
nC
nC
Qge
Qgc
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES
50
td(on)
tri
td(off)
tfi
20
28
ns
ns
Inductiveload
IC = IC110, VGE = 15 V
350
200
4.7
500 ns
ns
VCE = 720 V, RG = Roff = 5 Ω
Eoff
7.5 mJ
td(on)
tri
20
28
ns
ns
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
Eon
td(off)
tfi
1.5
400
420
8.7
mJ
ns
VCE = 720 V, RG = Roff = 5 Ω
ns
Eoff
mJ
RthJC
RthCH
0.31 K/W
K/W
0.21
Diode
Symbol
IF25
Conditions
Maximum Ratings
30
TC = 115°C
A
Symbol
Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
VF
IF = 30 A; Note 1
2.5 2.75
1.8
V
V
TVJ = 150°C
IRM
trr
IF = 10 A; diF/dt = -100 A/μs; TVJ = 100°C
VR = 100 V; VGE = 0 V
5.5 11.5
200
A
ns
RthJC
RthCH
0.9 K/W
K/W
with heat transfer paste
0.25
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETsandIGBTsarecoveredby
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
ºC
@ 25 ºC
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
V
GE
=15V
13V
V
GE
= 15V
13 V
11V
9V
11V
7V
9V
7V
5V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
3
6
VC E - Volts
9
12
15
VC E - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. Dependence of VCE(sat) on
Temperature
ºC
100
90
80
70
60
50
40
30
20
10
0
1.3
V
GE
= 15V
13V
V
GE
= 15V
I
= 100A
C
1.2
1.1
1.0
0.9
0.8
0.7
11V
9V
7V
I
= 50A
C
I
= 25A
C
5V
0
0.5
1
1.5
2 2.5
VCE - Volts
3
3.5
4
4.5
-50
-25
0
25
50
75
100 125 150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
250
T = -40ºC
J
225
200
175
150
125
100
75
= 25ºC
T
J
25ºC
125ºC
I
= 100A
50A
C
25A
50
25
0
3
4
5
6
7
8
9
10
11
12
5
6
7
8
9 10 11 12 13 14 15
VG E - Volts
VG E - Volts
© 2006 IXYS All rights reserved
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 8. Dependence of Turn-off
Fig. 7. Transconductance
Energy Loss on RG
55
50
45
40
35
30
25
20
15
10
5
40
T = 125ºC
J
I
= 100A
C
35
30
25
20
15
10
5
V
= 15V
GE
CE
V
= 720V
T = -40ºC
J
25ºC
125ºC
I
= 50A
C
I
= 25A
C
0
0
0
20
5
25
50
75 100 125 150 175 200 225
0
30
60
G
90
120
150
R
- Ohms
I C - Amperes
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
Fig. 9. Dependence of Turn-Off
Energy Loss on IC
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
= 100A
C
R
=5Ω
G
T = 125ºC
J
V
V
= 15V
GE
CE
= 720V
R
V
=5Ω
G
= 15V
GE
CE
I
= 50A
C
V
= 720V
T = 25ºC
J
6
6
4
4
2
2
I
= 25A
C
0
0
25 35 45 55 65 75 85 95 105 115 125
T - Degrees Centigrade
30
40
50
60
I C - Amperes
70
80
90
100
J
Fig. 12. Dependence of Turn-off
Switching Time on IC
Fig. 11. Dependence of Turn-off
Switching Time on RG
1300
1200
1100
1000
900
600
550
500
450
400
350
300
250
200
150
td(off)
td(off)
tfi
- - - - -
I
= 25A
50A
C
tfi
- - - - - -
R
V
= 15V
=5Ω, V
G
GE
T = 125ºC
J
= 720V
CE
100A
V
V
= 15V
GE
CE
= 720V
T = 125ºC
J
800
700
I
= 100A
50A
C
600
T = 25ºC
J
500
25A
400
300
200
10
15
20
25
R G - Ohms
30
35
40
45
50
20
30
40
50
60
70
80
90
100
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
Fig. 14. Gate Charge
15
600
550
500
450
400
350
300
250
200
150
td(off)
13.5
12
10.5
9
V
I
= 450V
CE
tfi
R
V
V
- - - - - -
I
= 25A
50A
C
= 50A
C
Ω
=
5
G
I
= 10mA
G
100A
=
=
15 V
GE
CE
720V
7.5
6
4.5
3
I
= 100A
50A
C
1.5
0
25A
25 35 45 55 65 75 85 95 105 115 125
0
20
40
60
80
Q G - nanoCoulombs
100
120
140
T - Degrees Centigrade
J
Fig. 16. Reverse-Bias Safe
Operating Area
Fig. 15. Capacitance
10000
110
100
90
80
70
60
50
40
30
20
10
0
f = 1 MHz
C
ies
1000
100
10
C
oes
T = 125ºC
J
C
R
G
=10Ω
dV/dT < 10V/ns
res
0
5
10
15
20
VC E - Volts
25
30
35
40
100 200 300 400 500 600 700 800 900
VC E - Volts
Fig. 17. Maximum Transient Thermal Resistance
1
0.1
0.01
0.1
1
10
Pulse Width - milliseconds
100
1000
© 2006 IXYS All rights reserved
IXGH 50N90B2D1 IXGK 50N90B2D1
IXGX 50N90B2D1
70
A
5
60
TVJ= 100°C
VR = 600V
TVJ= 100°C
A
μC
VR = 600V
50
60
IF 50
40
4
3
2
1
0
Qr
IRM
IF= 60A
IF= 30A
IF= 15A
IF= 60A
40
IF= 30A
IF=15A
TVJ=150°C
TVJ=100°C
30
30
20
10
0
20
TVJ= 25°C
10
0
A/μs
-diF/dt
0
1
2
3
VF
V
4
100
1000
0
200 400 600 1000
A/μs
-diF/dt
Fig. 18. Forward current IF versus VF
2.0
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
Fig. 20. Peak reverse current IRM
versus -diF/dt
220
120
1.2
μs
TVJ= 100°C
TVJ= 100°C
VR = 600V
ns
IF = 30A
V
200
VFR
tfr
1.5
Kf
tfr
VFR
trr
80
40
0
0.8
180
IF= 60A
1.0
IF= 30A
IRM
IF=15A
160
0.4
0.5
140
120
Qr
0.0
0.
A/μs
0
40
80
120
160
0
200 400 600 1000
0
200 400 600 1000
C
A/μs
diF/dt
TVJ
-diF/dt
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
Fig. 22. Recovery time trr versus -diF/dt
Fig. 23. Peak forward voltage VFR and
tfr versus diF/dt
2
1
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
K/W
1
2
3
0.465
0.179
0.256
0.0052
0.0003
0.0397
ZthJC
0.1
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 24 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
PackageOutlines
TO-247 AD Outline
PLUS 247TM Outline
TO-264 AA Outline
∅ P
e
Dim.
Millimeter
Inches
Min. Max.
Dim.
Millimeter
Inches
Max.
.202
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Min.
Max.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
.100
.079
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
c
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
D
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
E
e
20.80 21.34
15.75 16.13
20.80 21.46
15.75 16.26
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
K
e
L
L1
5.20
5.72 0.205 0.225
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
19.81 20.32
4.50
.780 .800
.177
3.81
4.32
P
3.17
3.66
.125
.144
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
∅P 3.55
Q
3.65
.140 .144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Terminals: 1-Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a subjective pre-
production design evaluation. IXYS reserves the right to change limits, test conditions, and
dimensions without notice.
© 2006 IXYS All rights reserved
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