IXTA5N50P [IXYS]

PolarHV Power MOSFET - N-Channel Enhancement Mode; PolarHV功率MOSFET - N沟道增强模式


型号：	IXTA5N50P
厂家：	IXYS CORPORATION
描述：	PolarHV Power MOSFET - N-Channel Enhancement Mode PolarHV功率MOSFET - N沟道增强模式
文件：	总5页 (文件大小：101K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

PolarHV^TM

Power MOSFET

V_DSS= 500 V

I_D25= 4.8 A

R_DS(on)≤ 1.4 Ω

IXTA 5N50P

IXTP 5N50P

IXTY 5N50P

N-Channel Enhancement Mode

Symbol

TestConditions

Maximum Ratings

TO-263 (IXTA)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

500

V_GSS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

4.8

TO-220 (IXTP)

I_AR

E_AR

E_AS

T_C= 25°C

250

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 20 Ω

V/ns

(TAB)

T_C= 25°C

TO-252 (IXTY)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature for soldering

TO-263 package for 10s

300

260

°C

(TAB)

M_d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

Weight

TO-220

TO-263

TO-252

0.8

G = Gate

S = Source

D = Drain

TAB = Drain

Features

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 50μA

V_GS= 30 V_DC, V_DS= 0

500

3.0

5.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

Advantages

T_J= 125°C

Easy to mount

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

1.4

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

DS99446(08/05)

IXTA 5N50P IXTP 5N50P

IXTY 5N50P

TO-263 (IXTA) Outline

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

V_DS= 10 V; I_D= 0.5 I_D25, pulse test

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

3.0

4.7

C_iss

C_oss

C_rss

620

6.3

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= I_D25

R_G= 20 Ω (External)

Pins: 1 - Gate 2,4 - Drain

3 - Source

Q_g(on)

Q_gs

12.6

4.3

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 0.5 I_D25

4.06

2.03

4.83

2.79

.160

.080

.190

.110

Q_gd

5.0

0.51

1.14

0.99

1.40

.020

.045

.039

.055

R_thJC

R_thCK

1.4 K/W

K/W

0.46

1.14

0.74

1.40

.018

.045

.029

.055

(TO-220)

0.25

8.64

7.11

9.65

8.13

.340

.280

.380

.320

9.65

6.86

2.54

10.29

8.13

BSC

.380

.270

.100

.405

.320

BSC

Source-Drain Diode

Characteristic Values

14.61

2.29

1.02

1.27

15.88

2.79

1.40

1.78

0.38

.575

.090

.040

.050

.625

.110

.055

.070

.015

(T_J= 25°C unless otherwise specified)

Symbol

I_S

TestConditions

Min.

typ.

Max.

0.46

0.74

.018

.029

V_GS= 0 V

I_SM

Repetitive

TO-220 (IXTP) Outline

V_SD

t_rr

I_F= I_S, V_GS= 0 V, -di/dt = 100 A/μs

1.5

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

400

TO-252 (IXTY) Outline

Dim. Millimeter

Min. Max.

Inches

Min.

Max.

2.19

0.89

2.38

1.14

0.086

0.035

0.094

0.045

0.64

0.13

0.89

0.005

0.035

0.025

0.76

5.21

1.14

5.46

0.030

0.205

0.045

0.215

Pins: 1 - Gate

3 - Source

2,4 - Drain

0.46

0.58

0.018

0.023

5.97

4.32

6.22

5.21

0.235

0.170

0.245

0.205

6.35

4.32

6.73

5.21

0.250

0.170

0.265

0.205

2.28BSC

4.57BSC

0.090BSC

0.180BSC

9.40 10.42

0.370

0.020

0.410

0.040

0.51

1.02

0.64

0.89

2.54

1.02

1.27

2.92

0.025

0.035

0.100

0.040

0.050

0.115

Pins: 1 - Gate

3 - Source

2,4 - Drain

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered by

oneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728 B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

IXTA 5N50P IXTP 5N50P

IXTY 5N50P

Fig. 1. Output Characteristics

@ 25

Fig. 2. Extended Output Characteristics

@ 25 C

V = 10V

10V

12 15 18 21 24 27 30

V_{D S}- Volts

Fig. 3. Output Characteristics

@ 125

Fig. 4. R_DS(onNormalized to 0.5 I_D25

)

Value vs. Junction Temperature

3.2

2.8

2.4

= 10V

= 5A

1.6

1.2

0.8

0.4

= 2.5A

-50

-25

100 125 150

V_{D S}- Volts

T_J- Degrees Centigrade

Fig. 6. Drain Current vs. Case

Temperature

Fig. 5. R_DS(on)Normalized to

0.5 I_D25Value vs. I_D

3.4

6.0

5.0

4.0

3.0

2.0

1.0

0.0

= 10V

T = 125

2.6

2.2

1.8

1.4

T = 25 C

0.6

-50

-25

100 125 150

I _D- Amperes

T_C- Degrees Centigrade

IXTA 5N50P IXTP 5N50P

IXTY 5N50P

Fig. 8. Transconductance

Fig. 7. Input Admittance

T_J= -40

125

T = 125

-40

4.5

5.5

6.5

V_{G S}- Volts

I _D- Amperes

Fig. 9. Source Current vs.

Source-To-Drain Voltage

Fig. 10. Gate Charge

= 250V

= 2.5A

= 10mA

T = 125 C

T = 25 C

0.4

0.5

0.6

0.7

0.8

0.9

V_{S D}- Volts

Q _G- nanoCoulombs

Fig. 12. Forward-Bias

Safe Operating Area

Fig. 11. Capacitance

100

10000

f = 1MHz

T = 150

= 25 C

iss

Limit

DS(on)

1000

100

25µs

oss

10 0 µ s

1m s

rss

10 m s

0.1

100

1000

V_{D S}- Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered by

oneormoreofthefollowingU.S.patents:

4,835,592

4,850,072

4,881,106

4,931,844

5,017,508

5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728 B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2

6,710,463

6,727,585

6,759,692

IXTA 5N50P IXTP 5N50P

IXTY 5N50P

Fig. 13. Maximum Transient Thermal Resistance

10.00

1.00

0.10

0.01

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXTA5N50P [IXYS]

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