IXTA5N60P [IXYS]
Power Field-Effect Transistor, 5A I(D), 600V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN;
| 型号： | IXTA5N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 5A I(D), 600V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM
Power MOSFET
VDSS = 600
V
IXTA 5N60P
IXTP 5N60P
ID25 5 A
=
RDS(on) ≤ 1.7
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings
TO-263 (IXTA)
600
600
V
V
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
S
(TAB)
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
5
10
A
A
TO-220 (IXTP)
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
5
20
360
A
mJ
mJ
(TAB)
G
D
S
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 18 Ω
,
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C
100
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Md
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
4
3
g
g
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 50μA
VGS = 30 V, VDS = 0 V
600
V
V
Advantages
3.0
5.5
z
Easy to mount
Space savings
100
nA
z
z
IDSS
VDS = VDSS
VGS = 0 V
5
50
μA
μA
High power density
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
1.7
Ω
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99426E(04/06)
© 2006 IXYS All rights reserved
IXTA 5N60P
IXTP 5N60P
TO-263 (IXTA) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
3.0
5.0
S
Ciss
Coss
Crss
750
78
pF
pF
pF
6.3
td(on)
tr
td(off)
tf
22
24
55
17
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 18 Ω (External)
Qg(on)
Qgs
14.2
4.8
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
4.8
RthJC
RthCS
1.25 °C/W
°C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VGS = 0 V
Repetitive
5
A
A
ISM
15
VSD
trr
IF = IS, VGS = 0 V, IF = 5 A, -di/dt = 100 A/μs
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
500
ns
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTA 5N60P
IXTP 5N60P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25
º
C
@ 25 C
º
5
4.5
4
10
9
8
7
6
5
4
3
2
1
0
V
= 10V
8V
V
10V
GS
GS =
8V
3.5
3
7V
7V
2.5
2
6V
1.5
1
6V
0.5
0
0
3
6
9
12 15 18 21 24 27 30
0
0
0
1
2
3
4
5
6
7
8
16
10
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Norm alized to 0.5 ID25
)
º
C
Value vs. Junction Tem perature
5
4.5
4
2.6
2.4
2.2
2
V
= 10V
8V
GS
V
= 10V
GS
7V
3.5
3
1.8
1.6
1.4
1.2
1
6V
5V
I
= 5A
D
2.5
2
I
= 2.5A
D
1.5
1
0.8
0.6
0.4
0.5
0
2
4
6
8
10
12
14
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs. ID
2.8
2.6
2.4
2.2
2
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
GS
º
T = 125 C
J
1.8
1.6
1.4
1.2
1
º
T = 25 C
J
0.8
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXTA 5N60P
IXTP 5N60P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
º
= 125 C
T
J
º
25 C
º
-40 C
º
TJ = -40 C
º
º
25 C
125 C
0
1
2
3
4
5
6
4
4.5
5
5.5
6
6.5
7
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
14
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
12
10
8
I
I
= 2.5A
D
G
= 10mA
º
T = 125 C
J
6
4
º
T = 25 C
J
2
0
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
10
12
14
16
VS D - Volts
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10000
1000
100
10
10.00
1.00
0.10
0.01
f = 1MHz
C
C
C
iss
oss
rss
1
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
VD S - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
相关型号：
IXTA6N50P
Power Field-Effect Transistor, 6A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
IXYS
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