IXTH3N150 [IXYS]
Power Field-Effect Transistor, 3A I(D), 1500V, 7.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN;
| 型号： | IXTH3N150 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 3A I(D), 1500V, 7.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage
Power MOSFET
VDSS = 1500V
ID25 = 3A
RDS(on) 7.3
IXTH3N150
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-247
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
1500
1500
V
V
VDGR
G
D
Tab
VGSS
VGSM
Continuous
Transient
30
40
V
V
S
G = Gate
S = Source
D
= Drain
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
3
9
A
A
Tab = Drain
IA
EAS
TC = 25C
TC = 25C
3
250
A
mJ
Features
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
5
V/ns
W
International Standard Package
Fast Intrinsic Diode
250
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13 / 10
Nm/lb.in.
g
Easy to Mount
Space Savings
Weight
6
High Power Density
Applications
Symbol
Test Conditions
Characteristic Values
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
(TJ = 25C, Unless Otherwise Specified)
Min.
1500
2.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
5.0
100 nA
IDSS
10 A
TJ = 125C
100 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
7.3
DS100286C(10/13)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTH3N150
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
2.2
3.6
S
Ciss
Coss
Crss
1375
90
pF
pF
pF
30
RGI
3.0
td(on)
tr
td(off)
tf
19
21
42
25
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
1 - Gate
2,4 - Drain
3 - Source
Qg(on)
Qgs
38.6
6.5
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
19.0
RthJC
RthCS
0.50 C/W
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V, Note1
3
A
A
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
12
1.3
V
trr
QRM
IRM
0.9
6.7
15
s
IF = 1.5A, -di/dt = 100A/μs
C
VR = 100V
A
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTH3N150
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Output Characteristics @ TJ = 125ºC
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
7V
GS
V
= 10V
GS
6V
6V
5.5V
5V
5V
4V
4V
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
30
35
40
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.
Drain Current
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.
Junction Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= 10V
GS
V
= 10V
GS
T
J
= 125ºC
I
= 3A
D
I
= 1.5A
D
T
J
= 25ºC
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ - Degrees Centigrade
ID - Amperes
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
= 125ºC
J
25ºC
- 40ºC
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXTH3N150
Fig. 8. Forward Voltage Drop of Intrinsic Diode
Fig. 7. Transconductance
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD - Volts
ID - Amperes
Fig. 9. Gate Charge
Fig. 10. Capacitance
10,000
1,000
100
10
V
= 750V
DS
= 1 MHz
f
I
I
= 1.5A
D
G
8
6
4
2
0
C
iss
= 10mA
C
oss
C
rss
10
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 11. Maximum Transient Thermal Impedance
Fig. 12. Forward-Bias Safe Operating Area
10
1
R
DS(on)
Limit
25µs
100µs
1
1ms
0.1
10ms
0.1
0.01
100ms
DC
T = 150ºC
J
T
C
= 25ºC
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
10
100
1,000
10,000
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_3N150(4N)10-26-10-A
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