IXTP90N055T [IXYS]
Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN;
| 型号： | IXTP90N055T |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA90N055T
IXTP90N055T
VDSS = 55
ID25 = 90
RDS(on) ≤ 8.8 m Ω
V
A
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
55
55
V
V
G
S
VGSM
Transient
20
V
(TAB)
ID25
ILRMS
IDM
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
90
75
240
A
A
A
TO-220 (IXTP)
IAR
EAS
TC = 25° C
TC = 25° C
25
400
A
mJ
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤175° C, RG = 10 Ω
3
V/ns
G
(TAB)
D
S
TC =25°C
176
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +175
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
°C
°C
Features
ꢀUltra-low On Resistance
ꢀUnclamped Inductive Switching (UIS)
rated
Md
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
ꢀLow package inductance
- easy to drive and to protect
ꢀ175 ° C Operating Temperature
Weight
TO-220
TO-263
3
2.5
g
g
Advantages
ꢀ
Easy to mount
Space savings
High power density
ꢀ
Symbol
Test Conditions
Characteristic Values
ꢀ
(TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 50 µA
55
V
V
Applications
Automotive
- Motor Drives
- High Side Switch
- 12VBattery
ꢀ
2.0
4.0
VGS
=
20 V, VDS = 0 V
200
nA
- ABS Systems
IDSS
VDS = VDSS
VGS = 0 V
1
250
µA
µA
ꢀ
TJ = 150° C
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
ꢀ
RDS(on)
VGS = 10 V, ID = 25 A, Note 1
6.6
8.8 m Ω
ꢀ
Applications
DS99624 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA90N055T
IXTP90N055T
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
(TJ = 25° C unless otherwise specified)
gfs
VDS= 10 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
55
S
Ciss
Coss
Crss
2500
440
pF
pF
pF
113
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A
RG = 10 Ω (External)
19
30
40
20
ns
ns
ns
ns
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
Qg(on)
Qgs
61
15
11
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Qgd
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
RthCS
0.85°C/W
°C/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
TO-220
0.50
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
Source-Drain Diode
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
Symbol
Test Conditions
Characteristic Values
L1
L2
L3
L4
TJ = 25° C unless otherwise specified)
Min. Typ.
Max.
IS
VGS = 0 V
90
A
A
R
0.46
0.74
.018
.029
ISM
VSD
trr
Pulse width limited by TJM
IF = 25 A, VGS = 0 V, Note 1
240
1.0
TO-220 (IXTP) Outline
V
IF = 25 A, -di/dt = 100 A/µs
70
ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6771478 B2 7,071,537
IXTA90N055T
IXTP90N055T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
320
280
240
200
160
120
80
90
80
70
60
50
40
30
20
10
0
V
= 10V
GS
V
= 10V
GS
9V
8V
9V
8V
7V
6V
7V
6V
40
5V
5V
10
0
0
2
4
6
8
12
14
16
18
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 45A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
90
80
70
60
50
40
30
20
10
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10V
GS
V
= 10V
GS
9V
8V
7V
6V
I
= 90A
D
I
= 45A
D
5V
1
0
0.2
0.4
0.6
0.8
1.2
1.4
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 45A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.6
2.4
2.2
2
90
80
70
60
50
40
30
20
10
0
V
= 10V
15V
GS
External Lead Current Limit
T = 175ºC
J
- - - -
1.8
1.6
1.4
1.2
1
T = 25ºC
J
0.8
-50
-25
0
25
50
75
100
125
150
175
0
40
80
120
160
200
240
280
320
ID - Amperes
TC - Degrees Centigrade
© 2006 IXYS CORPORATION All rights reserved
IXTA90N055T
IXTP90N055T
Fig. 8. Transconductance
Fig. 7. Input Admittance
180
160
140
120
100
80
80
70
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
T
J
= -40ºC
25ºC
150ºC
150ºC
60
40
20
0
0
20
40
60
80
100
120
140
160
180
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
1.8
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
300
270
240
210
180
150
120
90
10
9
8
7
6
5
4
3
2
1
0
V
= 27.5V
DS
I
I
= 10A
D
G
= 10mA
T
J
= 150ºC
60
T
= 25ºC
J
30
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65
QG - NanoCoulombs
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
f = 1 MHz
C
C
iss
oss
C
rss
0
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA90N055T
IXTP90N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
36
34
32
30
28
26
24
22
20
18
38
36
34
32
30
28
26
24
22
20
18
R
= 10
Ω
G
R
V
V
= 10
Ω
G
V
V
= 10V
GS
DS
T = 25ºC
= 10V
J
GS
DS
= 27.5V
= 27.5V
I
= 30A
D
I
= 10A
D
T = 125ºC
J
10
12
14
16
18
20
22
24
26
28
30
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
90
34
32
30
28
26
24
22
20
18
42
68
65
62
59
56
53
50
47
44
41
38
35
t r
td(on)
- - - -
t f
R
td(off)
- - - -
40
38
36
34
32
30
28
26
24
22
20
80
70
60
50
40
30
20
10
TJ = 125ºC, V = 10V
GS
I
= 30A
= 10 , V = 10V
Ω
D
G
GS
V
= 27.5V
DS
V
= 27.5V
DS
I
= 10A
D
I
= 10A
D
I
= 30A
D
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
25
35
45 55
65
75
85
95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Fig. 18. Resistive Turn-off
Switching Times vs. Drain Current
Switching Times vs. Gate Resistance
38
36
34
32
30
28
26
24
22
20
18
70
66
62
58
54
50
46
42
38
34
30
110
100
90
180
160
140
120
100
80
tf
td(off)
- - - -
T = 125ºC, VGS = 10V
J
TJ = 125ºC
V
DS = 27.5V
80
tf
R
td(off)
- - - -
70
I
= 10A
D
= 10 , VGS = 10V
Ω
G
60
VDS = 27.5V
50
60
T = 25ºC
J
I
= 30A
D
40
40
30
20
10 12 14
16
18
20
22
24
26
28
30
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
ID - Amperes
IXYS REF: T_90N055T (2V) 7-06-06.xls
© 2006 IXYS CORPORATION All rights reserved
相关型号：
IXTP90N15T
Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode
IXYS
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