IXTT500N04T2 [IXYS]
Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN;
| 型号： | IXTT500N04T2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
TrenchT2TM
Power MOSFET
VDSS = 40V
ID25 = 500A
RDS(on) ≤ 1.6mΩ
IXTH500N04T2
IXTT500N04T2
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Fast Intrinsic Diode
G
D
D (Tab)
S
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
40
40
V
V
VDGR
TO-268 (IXTT)
VGSM
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
500
160
A
A
A
G
S
TC = 25°C, Pulse Width Limited by TJM
1250
D (Tab)
IA
TC = 25°C
TC = 25°C
TC = 25°C
100
800
A
mJ
W
EAS
PD
G = Gate
D
= Drain
S = Source
Tab = Drain
1000
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
Features
-55 ... +175
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
z Fast Intrinsic Diode
Weight
TO-247
TO-268
6
4
g
g
z
Low RDS(on)
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
40
V
V
1.5
3.5
Applications
±200 nA
• Synchronous Buck Converters
• High Current Switching Power
Supplies
IDSS
10 μA
TJ = 150°C
VGS = 10V, ID = 100A, Notes 1 & 2
750 μA
RDS(on)
1.6 mΩ
• Battery Powered Electric Motors
• Resonant-Mode Power Supplies
• Electronics Ballast Application
• Class D Audio Amplifiers
DS100218(12/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH500N04T2
IXTT500N04T2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
75
125
S
Ciss
Coss
Crss
25
4410
970
nF
pF
pF
∅ P
1
2
3
RGi
Gate Input Resistance
1.1
Ω
td(on)
tr
td(off)
tf
37
16
68
44
ns
ns
ns
ns
Resistive Switching Times
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A
Terminals: 1 - Gate
2 - Drain
Tab - Drain
RG = 1Ω (External)
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
405
105
118
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCH
0.15 °C/W
°C/W
TO-247
0.21
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Source-Drain Diode
.780 .800
.177
Symbol
Test Conditions
Characteristic Values
∅P 3.55
Q
3.65
.140 .144
(TJ = 25°C, Unless Otherwise Specified)
Min. Typ.
Max.
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
500
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
1500
1.2
TO-268 (IXTT) Outline
trr
84
3.1
ns
A
IF = 100A, VGS = 0V
IRM
QRM
-di/dt = 100A/μs
VR = 20V
130
nC
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTH500N04T2
IXTT500N04T2
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
VGS = 15V
VGS = 15V
10V
9V
8V
10V
8V
7V
7V
6V
6V
5V
5V
4V
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized vs. Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
320
280
240
200
160
120
80
VGS = 15V
VGS = 10V
10V
8V
7V
I
D < 500A
6V
5V
4V
3V
40
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-50
-25
0
25
50
75
100
125
150
175
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
180
160
140
120
100
80
2.0
1.8
1.6
1.4
1.2
1.0
0.8
TJ = 175ºC
External Lead Current limit
VGS = 10V
15V
60
TJ = 25ºC
40
20
0
0
50
100
150
200
250
300
350
400
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH500N04T2
IXTT500N04T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
200
150
100
50
240
200
160
120
80
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
40
0
0
0
20
40
60
80
100 120 140 160 180 200 220 240 260
ID - Amperes
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
350
300
250
200
150
100
50
10
9
8
7
6
5
4
3
2
1
0
VDS = 20V
I
I
D = 250A
G = 10mA
TJ = 150ºC
TJ = 25ºC
0
0
50
100
150
200
250
300
350
400
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
QG - NanoCoulombs
VSD - Volts
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
100,000
10,000
1,000
100
10,000
1,000
100
10
R
Limit
DS(on)
C
iss
25µs
100µs
External Lead Limit
1ms
C
oss
10ms
C
rss
T
= 175ºC
= 25ºC
J
100ms
DC
T
C
= 1 MHz
5
f
Single Pulse
1
0
10
15
20
25
30
35
40
0.1
1
10
100
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH500N04T2
IXTT500N04T2
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
RG = 1ꢀ , VGS = 10V
RG = 1Ω , VGS = 10V
DS = 20V
VDS = 20V
V
100A < I D < 200A
TJ = 125ºC
TJ = 25ºC
40
60
80
100
120
140
160
180
200
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
ID - Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
600
500
400
300
200
100
0
140
160
140
120
100
80
130
120
110
100
90
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
DS = 20V
t f
t
d(off) - - - -
RG = 1Ω, VGS = 10V
DS = 20V
120
100
80
V
V
I D = 200A
I D = 100A
60
80
60
I D = 100A
I D = 200A
40
70
40
20
60
0
50
20
25
35
45
55
65
75
85
95
105
115
125
1
2
3
4
5
6
7
8
9
10
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
500
400
300
200
100
0
500
400
300
200
100
0
90
80
70
60
50
40
30
120
110
100
90
t f
t
d(off) - - - -
TJ = 125ºC, VGS = 10V
DS = 20V
t f
t
d(off) - - - -
RG = 1ꢀ, VGS = 10V
DS = 20V
I D = 200A, 100A
V
V
TJ = 125ºC
80
TJ = 25ºC
70
60
40
60
80
100
120
140
160
180
200
1
2
3
4
5
6
7
8
9
10
ID - Amperes
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXTH500N04T2
IXTT500N04T2
Fig. 19. Maximum Transient Thermal Impedance
dfafas
0.300
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_500N04T2(98)12-09-09
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