IXYH50N120C3D1 [IXYS]
High-Speed IGBT for 20-50 kHz Switching; 高速IGBT为20-50 kHz开关
| 型号： | IXYH50N120C3D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High-Speed IGBT for 20-50 kHz Switching |
| 文件： | 总7页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V XPTTM IGBT
GenX3TM w/ Diode
VCES = 1200V
IC100 = 50A
VCE(sat) ≤ 4.0V
tfi(typ) = 43ns
IXYH50N120C3D1
High-Speed IGBT
for 20-50 kHz Switching
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
TJ = 25°C to 150°C, RGE = 1MΩ
V
G
VGES
VGEM
Continuous
Transient
±20
±30
V
V
C
Tab
=
E
IC25
IC100
IF110
ICM
TC = 25°C (Chip Capability)
TC = 100°C
TC = 110°C
90
50
25
A
A
A
A
G = Gate
E = Emitter
C
Collector
Tab = Collector
TC = 25°C, 1ms
210
SSOA
VGE = 15V, TVJ = 150°C, RG = 5Ω
ICM = 100
A
(RBSOA)
Clamped Inductive Load
@VCE ≤ VCES
PC
TC = 25°C
625
W
Features
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
z
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
International Standard Package
z
z
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
z
z
z
Md
Mounting Torque
1.13/10
6
Nm/lb.in.
g
Weight
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Applications
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
1200
3.0
Typ.
Max.
z
z
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
z
5.0
z
z
50 μA
z
TJ = 125°C
TJ = 150°C
500 μA
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 50A, VGE = 15V, Note 1
4.0
V
V
4.2
© 2013 IXYS CORPORATION, All Rights Reserved
DS100388C(02/13)
IXYH50N120C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-247 (IXYH) Outline
Min.
Typ.
Max.
gfs
IC = 50A, VCE = 10V, Note 1
20
32
S
Cies
Coes
Cres
3100
230
66
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
∅ P
1
2
3
Qg(on)
Qge
Qgc
142
23
nC
nC
nC
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
60
td(on)
tri
Eon
td(off)
tfi
28
62
ns
ns
mJ
ns
ns
e
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
Terminals: 1 - Gate
3 - Emitter
2 - Collector
3.0
133
43
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 0.5 • VCES, RG = 5Ω
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note 2
Eof
1.0
1.7 mJ
f
td(on)
tri
28
68
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
Eon
td(off)
tfi
6.0
160
60
mJ
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
VCE = 0.5 • VCES, RG = 5Ω
ns
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Note 2
.780 .800
.177
Eoff
1.4
mJ
∅P 3.55
3.65
.140 .144
RthJC
RthCS
0.20 °C/W
°C/W
Q
5.89
6.40 0.232 0.252
0.21
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Reverse Diode (FRED)
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Value
Symbol
Test Conditions
Min. Typ.
Max.
VF
3.00
V
V
IF = 30A,VGE = 0V, Note 1
TJ = 150°C
1.75
IRM
trr
9
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
195
ns
VR = 600V
TJ = 100°C
RthJC
0.90 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYH50N120C3D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
14V
VGE = 15V
13V
11V
10V
13V
12V
9V
11V
10V
8V
9V
8V
7V
6V
7V
6V
0
0
0
6
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
5
10
15
20
25
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
100
90
80
70
60
50
40
30
20
10
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGE = 15V
VGE = 15V
13V
12V
11V
10V
I C = 100A
9V
I C = 50A
8V
7V
I C = 25A
6V
5V
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
6
7
8
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
TJ = 25ºC
I C = 100A
50A
TJ = 150ºC
25ºC
- 40ºC
25A
11
7
8
9
10
12
13
14
15
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
VGE - Volts
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
44
40
36
32
28
24
20
16
12
8
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
C = 50A
I G = 10mA
I
25ºC
150ºC
6
4
2
4
0
0
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
100
80
60
40
20
0
C
ies
C
oes
TJ = 150ºC
RG = 5
C
res
Ω
= 1 MHz
5
f
dv / dt < 10V / ns
10
200
400
600
800
1000
1200
0
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
on - - - -
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
21
18
15
12
9
6
5
4
3
2
1
0
30
25
20
15
10
5
E
E
on - - - -
E
off
off
RG = 5
TJ = 150ºC , VGE = 15V
VCE = 600V
VGE = 15V
Ω ,
VCE = 600V
I C = 100A
TJ = 150ºC
TJ = 25ºC
6
I C = 50A
3
0
0
20
30
40
50
60
70
80
90
100
5
10
15
20
25
30
RG - Ohms
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
140
120
100
80
600
500
400
300
200
100
0
5
20
E
E
on - - - -
t f i
td(off)
- - - -
off
RG = 5
VGE = 15V
TJ = 150ºC, VGE = 15V
Ω ,
4
3
2
1
0
16
12
8
VCE = 600V
VCE = 600V
I C = 100A
I C = 100A
I C = 50A
60
4
I C = 50A
40
0
20
25
50
75
100
125
150
5
10
15
20
25
30
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
160
140
120
100
80
180
170
160
150
140
130
120
110
160
140
120
100
80
240
t f i
t
d(off) - - - -
t f i
td(off)
- - - -
220
200
180
160
140
120
100
80
RG = 5
, VGE = 15V
Ω
RG = 5
,
VGE = 15V
Ω
VCE = 600V
VCE = 600V
TJ = 125ºC
I C = 100A
60
I C = 50A
60
TJ = 25ºC
40
40
20
20
0
25
50
75
100
125
150
20
30
40
50
60
70
80
90
100
IC - Amperes
TJ - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH50N120C3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
240
200
160
120
80
44
350
300
250
200
150
100
50
85
75
65
55
45
35
25
15
t r i
td(on)
- - - -
t r i
td(on) - - - -
40
36
32
28
24
20
RG = 5
,
VGE = 15V
Ω
TJ = 150ºC, VGE = 15V
I C = 100A
VCE = 600V
VCE = 600V
TJ = 150ºC, 25ºC
I C = 50A
40
0
0
20
30
40
50
60
70
80
90
100
5
10
15
20
25
30
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
240
200
160
120
80
44
40
36
32
28
24
20
tr i
td(on) - - - -
RG = 5
, VGE = 15V
Ω
VCE = 600V
I C = 100A
I C = 50A
40
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 21. Maximum Transient Thermal Impedance (Diode)
1
0.1
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_50N120C3D1(6N)05-04-12
IXYH50N120C3D1
Fig. 22. Forward Current IF vs VF
Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt
5
4
3
2
1
0
70
60
50
40
30
20
10
0
TVJ = 100ºC
VR = 600V
IF = 60A
TVJ = 150ºC
100ºC
25ºC
IF
QRM
[µC]
[A]
30A
15A
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
100
1000
500
VF [V]
-diF/dt [A/µs]
Fig. 24. Peak Reverse Current IRM vs. -diF/dt
Fig. 25. Dynamic Parameters QRM, IRM vs. TVJ
60
50
40
30
20
10
0
2
1.5
1
TVJ = 100ºC
VR = 600V
IF = 60A, 30A, 15A
IRM
[A]
IRM
0.5
0
QRM
20
40
60
80
TVJ [ºC]
100
120
140
160
200
400
600
800
1000
-diF/dt [A/µs]
Fig. 26. Recovery Time trr vs. -diF/dt
Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt
220
200
180
160
140
120
120
1.2
TVJ = 100ºC
IF = 30A
TVJ = 100ºC
VR = 600V
100
80
60
40
20
0
1
trr
0.8
0.6
0.4
0.2
0
t
rr
[ns]
IF = 60A
VFR
[V]
t
rr
30A
15A
[µs]
VFR
200
400
600
800
1000
0
100
200
300
400
500
600
700
800
900 1000
-diF/dt [A/µs]
-diF/dt [A/µs]
© 2013 IXYS CORPORATION, All Rights Reserved
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