MUBW25-12T7 [IXYS]

Converter - Brake - Inverter Module with Trench IGBT technology; 转换器 - 制动 - 与沟道IGBT技术的逆变器模块
MUBW25-12T7
型号: MUBW25-12T7
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Converter - Brake - Inverter Module with Trench IGBT technology
转换器 - 制动 - 与沟道IGBT技术的逆变器模块

晶体 转换器 晶体管 开关 功率控制 双极性晶体管 局域网
文件: 总4页 (文件大小:96K)
中文:  中文翻译
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MUBW 25-12 T7  
Converter - Brake - Inverter Module (CBI2)  
with Trench IGBT technology  
Preliminary data  
21 22  
D11 D13 D15  
D7  
16  
D1  
D3  
D5  
NTC  
8
18  
17  
20  
19  
T1  
T2  
T3  
T4  
T5  
T6  
7
1
2
3
15  
6
5
4
D2  
D12 D14 D16  
D4  
D6  
11  
10  
14  
13  
12  
T7  
9
23 24  
ThreePhase BrakeChopper  
Rectifier  
ThreePhase  
Inverter  
VRRM = 1600 V VCES = 1200 V VCES = 1200 V  
IFAVM = 38 A  
IC25  
= 30 A  
IC25  
= 45 A  
IFSM = 300 A  
VCE(sat) = 1.7 V  
VCE(sat) = 1.7 V  
Application: AC motor drives with  
Input Rectifier Bridge D11 - D16  
• Input from single or three phase grid  
• Three phase synchronous or  
asynchronous motor  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
1600  
V
• electric braking operation  
IFAV  
IDAVM  
IFSM  
TC = 80°C; sine 180°  
25  
72  
300  
A
A
A
TC = 80°C; rectangular; d = 1/3; bridge  
TVJ = 25°C; t = 10 ms; sine 50 Hz  
Features  
• High level of integration - only one power  
semiconductor module required for the  
whole drive  
Ptot  
TC = 25°C  
100  
W
• Inverter with Trench IGBTs  
- low saturation voltage  
- positive temperature coefficient  
- fast switching  
- short tail current  
• Epitaxial free wheeling diodes with  
Hiperfast and soft reverse recovery  
• Industry standard package with insulated  
copper base plate and soldering pins for  
PCB mounting  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min. typ. max.  
VF  
IF = 25 A; TVJ = 25°C  
TVJ = 125°C  
1.1  
1.1  
1.3  
V
V
• Temperature sense included  
IR  
VR = VRRM;TVJ = 25°C  
TVJ = 125°C  
0.02 mA  
mA  
0.4  
RthJC  
(per diode)  
1.3 K/W  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2006 IXYS All rights reserved  
1 - 4  
MUBW 25-12 T7  
Output Inverter T1 - T6  
EquivalentCircuitsforSimulation  
Conduction  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
Continuous  
1200  
20  
V
VGES  
V
IC25  
IC80  
ICM  
TC = 25°C  
TC = 80°C  
TC = 80°C; tp = 1 ms  
45  
25  
50  
A
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)  
T1-T6  
Ptot  
TC = 25°C  
170  
W
V0 = 0.92 V; R0 = 42.8 m  
Symbol  
Conditions  
Characteristic Values  
T7  
(TVJ = 25°C, unless otherwise specified)  
V0 = 0.92 V; R0 = 72 mΩ  
min.  
typ. max.  
VCE(sat)  
IC = 25 A; VGE = 15 V; TVJ  
=
25°C  
1.7 2.15  
2.0  
V
V
Diode (typ. at TJ = 125°C)  
TVJ = 125°C  
D1-D6  
V0 = tbd V; R0 = tbd mΩ  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
5
5.8  
6.5  
V
D7  
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
2.7 mA  
mA  
V0 = tbd V; R0 = tbd mΩ  
0.7  
D11-D16  
IGES  
Cies  
QGon  
VCE = 0 V; VGE  
=
20 V  
400 nA  
nF  
V0 = tbd V; R0 = tbd mΩ  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE= 600 V; VGE = 15 V; IC = 25 A  
1.8  
Thermal Response  
240  
nC  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
90  
50  
520  
90  
2.5  
3.4  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 25 A  
VGE = 15 V; RG = 36 Ω  
RBSOA  
IC = ICM; VGE = 15 V  
IGBT (typ.)  
RG = 36 ; TVJ = 125°C  
VCEK < VCES - LS di/dt  
100  
V
A
T1-T6  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
ISC  
(SCSOA)  
VCE = 720 V; VGE = 15 V; RG = 36 ;  
tp < 10 µs; non-repetitive; TVJ = 125°C  
T7  
RthJC  
(per IGBT)  
0.73 K/W  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
Output Inverter D1 - D6  
Diode (typ.)  
D1-D6  
Symbol  
Conditions  
Maximum Ratings  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
IF25  
IF80  
TC = 25°C  
TC = 80°C  
25  
17  
A
A
D7  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
D11-D16  
Cth1 = tbd J/K; Rth1 = tbd K/W  
Cth2 = tbd J/K; Rth2 = tbd K/W  
IF = 25 A; VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
2.1  
1.6  
2.6  
V
V
IRM  
Qrr  
trr  
tbd  
tbd  
tbd  
tbd  
A
µC  
ns  
IF = tbd A; diF/dt = -tbd A/µs; TVJ = 125°C  
VR = 600 V; VGE = 0 V  
Erec  
mJ  
RthJC  
(per diode)  
2.1 K/W  
© 2006 IXYS All rights reserved  
2 - 4  
MUBW 25-12 T7  
Brake Chopper T7  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
Continuous  
1200  
20  
V
V
VGES  
IC25  
IC80  
ICM  
TC = 25°C  
TC = 80°C  
TC = 80°C; tp = 1 ms  
30  
15  
30  
A
A
A
Ptot  
TC = 25°C  
120  
W
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
min.  
typ. max.  
VCE(sat)  
IC = 15 A; VGE = 15 V; TVJ  
=
25°C  
1.7  
2.0  
2.1  
V
V
TVJ = 125°C  
VGE(th)  
ICES  
IC = 0.5 mA; VGE = VCE  
5
5.8  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.1 mA  
mA  
0.25  
IGES  
Cies  
QGon  
VCE = 0 V; VGE  
=
20 V  
400 nA  
nF  
VCE = 25 V; VGE = 0 V; f = 1 MH z  
VCE= 600 V; VGE = 15 V; IC = 15 A  
1.1  
150  
nC  
td(on)  
tr  
td(off)  
tf  
90  
50  
520  
90  
ns  
ns  
ns  
ns  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 15 A  
VGE = 15 V; RG = 75 Ω  
Eoff  
1.5  
RBSOA  
IC = ICM; VGE = 15 V  
RG = 75 ; TVJ = 125°C  
VCEK < VCES - LS di/dt  
60  
V
A
ISC  
(SCSOA)  
VCE = 720 V; VGE = 15 V; RG = 75 Ω  
tp < 10 µs; non-repetitive; TVJ = 125°C  
RthJC  
1.05 K/W  
Brake Chopper D7  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
IF25  
IF80  
TC = 25°C  
TC = 80°C  
16  
11  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IF = 65 A; TVJ  
=
25°C  
3.0  
2.6  
3.3  
V
V
TVJ = 125°C  
IR  
VR = VRRM; TVJ 25°C  
=
0.06 mA  
mA  
TVJ = 125°C  
0.07  
RthJC  
3.2 K/W  
© 2006 IXYS All rights reserved  
3 - 4  
MUBW 25-12 T7  
Temperature Sensor NTC  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
R25  
B25/50  
T = 25°C  
4.75  
5.0 5.25 kΩ  
3375  
K
Module  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
TJM  
Tstg  
operating  
-40...+125  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
Md  
IISOL 1 mA; 50/60 Hz  
2500  
V~  
Mounting torque (M5)  
2.7 - 3.3  
Nm  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
Rpin-chip  
5
mΩ  
dS  
dA  
Creepage distance on surface  
Strike distance in air  
6
6
mm  
mm  
RthCH  
with heatsink compound  
0.02  
180  
K/W  
g
Weight  
Dimensions in mm (1 mm = 0.0394")  
© 2006 IXYS All rights reserved  
4 - 4  

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