VID50-06P1 [IXYS]
IGBT Modules in ECO-PAC 2; IGBT模块在ECO- PAC 2
| 型号： | VID50-06P1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Modules in ECO-PAC 2 |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDI50-06P1 VII 50-06P1
VID50-06P1 VIO50-06P1
IC25
VCES
= 42.5 A
= 600 V
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
VCE(sat) typ. = 2.4 V
Square RBSOA
Preliminary data sheet
VII
VIO
VDI
VID
L9
X15
L9
X13
NTC
NTC
X16
E2
A
S
X15
L9
F1
B3
T16
X15
NTC
X16
K10
Pin arangement see outlines
X16
Features
IGBTs
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
20
V
- fast switching
VGES
V
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
42.5
29
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = 15 V; RG = 33 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
60
VCES
A
µs
W
tSC
(SCSOA)
VCE = VCES; VGE
non-repetitive
=
15 V; RG = 33 Ω; TVJ = 125°C
10
Advantages
• space and weight savings
• reduced protection circuits
Ptot
TC = 25°C
130
• leads with expansion bend for stress relief
Symbol
Conditions
Characteristic Values
Typical Applications
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
• AC and DC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.4
2.9
2.9
V
V
• welding inverters
VGE(th)
ICES
IC = 0.7 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.6 mA
1.7 mA
IGES
VCE = 0 V; VGE
=
20 V
100 nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
50
270
40
1.4
1.0
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = 15/0 V; RG = 33 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
16
nF
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
0.96 K/W
K/W
1.92
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 4
VDI50-06P1 VII 50-06P1
VID50-06P1 VIO50-06P1
VII
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
30
19
A
A
Symbol
VF
Conditions
Characteristic Values
min.
typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
2.57 2.84
1.8
V
V
IRM
trr
IF = 15 A; di /dt = 400 A/µs; TVJ = 125°C
VR = 300 V;FVGE = 0 V
7
50
A
ns
RthJC
RthJH
2.3 K/W
K/W
B3
with heatsink compound (0.42 K/m.K; 50 µm)
4.6
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
VIO
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
mounting torque (M4)
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
a
Max. allowable acceleration
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
mm
mm
Weight
24
g
VID
VDI
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2 - 4
VDI50-06P1 VII 50-06P1
VID50-06P1 VIO50-06P1
90
90
A
A
IC
IC
VGE = 17 V
VGE= 17V
60
45
30
15
0
60
45
30
15
0
15 V
13 V
15V
13V
TJ = 25°C
11V
11V
TJ = 125°C
9V
9V
25T60
25T60
V
0
1
2
3
4
5 V
6
0
1
2
3
4
5
6
VCE
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
90
A
60
45
30
15
0
A
IF
VCE = 20V
IC
60
45
30
15
0
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
25T60
25T60
V
0,0
0,5
1,0
1,5
2,0
4
6
8
10
12
14 V 16
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
A
30
20
10
0
150
20
V
ns
trr
trr
15
IRM
VGE
90
60
30
0
10
5
TJ = 125°C
VR = 300 V
IF = 30 A
VCE = 300 V
IC
= 30 A
IRM
MUBW3006A7
25T60
0
nC
0
200
400
600
-di/dt
1000
A/µs
0
40
80
120
QG
160
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
3 - 4
VDI50-06P1 VII 50-06P1
VID50-06P1 VIO50-06P1
80
ns
60
400
Eoff
8
mJ
6
2,0
mJ
1,5
VCE = 300V
VGE 15V
=
ns
tr
RG = 33Ω
TVJ = 125°C
300
t
Eoff
Eon
td(on)
t
VCE = 300V
VGE 15V
=
td(off)
Eon
RG = 33Ω
TVJ = 125°C
4
2
0
40
20
0
1,0
0,5
0,0
200
100
tf
25T60
25T60
0
0
20
40
60 A
0
20
40
60
A
IC
IC
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
4
mJ
3
80
ns
2,0
mJ
400
VCE = 300V
VGE 15V
td(on)
VCE = 300 V
VGE 15 V
td(off)
ns
=
=
IC = 30A
IC = 30 A
TVJ = 125°C
Eoff
Eon
1,5
1,0
0,5
0,0
300
TVJ = 125°C
t
t
tr
60
40
20
Eoff
Eon
2
1
0
200
100
0
tf
25T60
25T60
0
10 20 30 40 50 60 70 Ω 80
0
10 20 30 40 50 60 70Ω 80
RG
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
80
A
10
diode
IGBT
K/W
1
60
ZthJC
ICM
0,1
40
20
0
0,01
0,001
single pulse
RG = 33 Ω
TVJ = 125°C
25T60
VDI...50-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
4 - 4
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