VUC25-14GO2 [IXYS]
Three Phase Rectifier Bridge; 三相整流桥
| 型号： | VUC25-14GO2 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Rectifier Bridge |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUC 25
IdAVM = 28 A
ITAVM = 26 A
VRRM = 1200-1600 V
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
4
3
2
4
8
1
VRSM
VDSM
VRRM
VDRM
Type
7
6
2
5
V
V
1
6
7
1300
1500
1700
1200
1400
1600
VUC 25-12go2
VUC 25-14go2
VUC 25-16go2
3
5
8
Features
Symbol
Test Conditions
Maximum Ratings
Diode Thyristor
●
PackagewithDCBceramicbaseplate
Isolation voltage 3600 V~
Planar passivated chips
●
●
●
●
●
●
IdAV
IdAVM
ITAVM
TK = 85°C; module
module
TK = 85°C; (DC)
25
28
-
-
-
26
A
A
A
Fast recovery diodes to reduce EMI
Separate thyristor for softstart
Solderable terminals
IFSM, ITSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine 300
t = 8.3 ms (60 Hz), sine 330
330
370
A
A
UL registered E 72873
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine 270
t = 8.3 ms (60 Hz), sine 300
300
330
A
A
Applications
Input rectifier for switching power
●
supplies (SMPS)
Softstart capacitor charging
Electric drives and auxiliaries
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine 450
t = 8.3 ms (60 Hz), sine 460
545
575
A2s
A2s
●
●
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine 365
t = 8.3 ms (60 Hz), sine 380
450
460
A2s
A2s
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Up to 10 dB lower EMI/RFI
compared to standard rectifier
●
●
(di/dt)cr
TVJ = TVJM
repetitive, IT = 50 A
150
A/ms
●
f =400 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A,
●
non repetitive, IT = ITAVM
500
200
A/ms
V/ms
diG/dt = 0.3 A/ms
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ¥; method 1 (linear voltage rise)
Dimensions in mm (1 mm = 0.0394")
VRGM
PGM
10
10
V
TVJ = TVJM
IT = ITAVM
tp = 30 ms
tp = 10 ms
£
£
W
1
0.5
W
W
PGAVM
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
t = 1 min
t = 1 s
3000
3600
V~
V~
IISOL £ 1 mA
Md
Mounting torque
typ.
(M5)
(10-32 UNF)
2-2.5
18-22
28
Nm
lb.in.
g
Weight
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 2
VUC 25
Symbol
IR, ID
Test Conditions
Characteristic Values
Diode Thyristor
VR = VRRM; VD = VDRM
TVJ = TVJM
VJ = 25°C
£
5
£
£
5
mA
T
£ 0.3
0.3 mA
VF, VT
IF = 55 A; IT = 45 A, TVJ = 25°C
£ 2.2
£
1.5
1.1
11 mW
V
V
VT0
rT
For power-loss calculations only
(TVJ = 125°C)
1.2
18
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = 25°C
£
£
1.5
80 mA
V
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
£
£
0.2
5
V
mA
IL
TVJ = 25°C; tG = 30 ms
£
300 mA
IG = 0.3 A; diG/dt = 0.3 A/ms
IH
TVJ = 25°C; VD = 6 V; RGK = ¥
£
£
100 mA
tgd
TVJ = 25°C; VD = 1/2 VDRM
IG = 0.3 A; diG/dt = 0.3 A/ms
2.5 ms
tq
TVJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms
VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM
typ. 130 ms
ms
trr
TVJ = 25°C; IF = 10 A;
£ 1.5
-
-di/dt = 10 A/ms, VR = 1/2 VRRM
RthJC
RthJH
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
2.3
0.38
2.9
0.9 K/W
- K/W
1.1 K/W
- K/W
0.48
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
7 mm
7 mm
50 m/s2
© 2000 IXYS All rights reserved
2 - 2
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