VVZB120-12IO1 [IXYS]
Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System; 三相半控整流桥IGBT ，快恢复二极管的制动系统
| 型号： | VVZB120-12IO1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VVZB 120
VRRM = 1200-1600 V
IdAV = 120 A
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
VRRM
Type
V
1200
1400
1600
VVZB 120-12 io1
VVZB 120-14 io1
VVZB 120-16 io1
Symbol
Conditions
Maximum Ratings
Features
IdAV
IFRMS/ITRMS
Tcase= 80°C, sinusoidal 120°
Tcase= 80°C, per leg
120
77
A
A
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
IFSM/ITSM
TVJ = 25°C, t = 10 ms, VR = 0 V
TVJ = 150°C,t = 10 ms, VR = 0 V
750
670
A
A
I2t
TVJ = 25°C, t = 10 ms, VR = 0 V
TVJ = 150°C,t = 10 ms, VR = 0V
2810
2240
A
A
Applications
(di/dt)cr
TVJ = TVJM
repetitive, IT = 150 A
150
A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
• Drive Inverters with brake system
IG = 0.45 A,
diG/dt = 0.45 A/µs
non repetitive, IT = Id(AV)/3
500
A/µs
V/µs
Advantages
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
1000
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
RGK = ¥; method 1 (linear voltage rise)
TVJ = TVJM
tP = 30 µs
tP = 300 µs
tP = 10 ms
10
5
1
W
W
W
IT = Id(AV)/3
PGAVM
0.5
W
VCES
VGE
TVJ = 25°C to 150°C
Continuous
1200
± 20
V
V
IC25
IC80
ICM
Tcase = 25°C, DC
78
52
A
A
A
Tcase = 80°C, DC
tp = Pulse width limited by TVJM
140
Ptot
Tcase = 80°C
222
W
V
VRRM
1200
IF(AV)
IF(RMS)
IFRM
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, tP = 10 µs, f = 5 kHz
27
38
tbd
A
A
A
IFSM
TVJ = 45°C, t = 10 ms
TVJ = 150°C,t = 10 ms
200
180
A
A
Ptot
Tcase = 80°C
64
W
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1 - 3
VVZB 120
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IR, ID
VR = VRRM/VDRM,
0.3 mA
VR = VRRM/VDRM, TVJ = 150°C
5
mA
V
VF, VT
IF = 100 A,
1.47
VT0
rT
For power-loss calculations only
TVJ = 150°C
0.85
5
V
mW
VGT
IGT
VD = 6 V; TVJ = 25°C
TVJ = -40°C
VD = 6 V; TVJ = 25°C
TVJ = -40°C
1.5
1.6
100 mA
200 mA
V
V
VGD
IGD
TVJ = TVJM; VD = 2/3 VDRM
TVJ = TVJM; VD = 2/3 VDRM
0.2
10 mA
V
IL
VD = 6 V; tG = 30 µs
450 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IH
TVJ = TVJM; VD = 6 V; RGK = ¥
200 mA
tgd
VD = ½ VDRM
2
µs
diG/dt = 0.45 A/µs; IG = 0.45 A
tq
TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs
dv/dt = 10 V/µs; IT = 120 A; -di/dt = 10 A/µs
150 µs
QS
IRM
TVJ = TVJM
-di/dt = 0.64 A/µs; IT/IF = 50 A
90 µC
11
A
RthJC
RthJH
per thyristor / diode; sine 120° el.
per thyristor / diode; sine 120° el.
1 K/W
1.3 K/W
VBR(CES)
VGE(th)
VGS = 0 V, IC = 1 mA
IC = 10 mA
1200
V
V
5
8
IGES
ICES
VGE = ± 20 V
500 nA
0.5 mA
VCE = 0.8 VCES
VCE = 0.8 VCES,TVJ = 150°C
3
mA
VCEsat
VGE = 15 V, IC = 50 A
3.35
V
tSC
VGE = 15 V, VCE = 0.6 VCES, TVJ = 125°C,
10 µs
(SCSOA)
RG = 11 W, non repetitive
RBSOA
VGE = 15 V, VCE = 0.8 VCES, TVJ = 125°C,
100
A
RG = 11 W, Clamped Inductive load, L = 100 µH
Cies
VCE = 25 V, f = 1 MHz, VGE = 0 V
9
nF
td(on)
td(off)
tri
tfi
Eon
Eoff
65
200
tbd
tbd
4.1
5.7
ns
ns
ns
ns
mJ
mJ
VCE = 0.6 VCES, IC = 25 A
VGE = 15 V, RG = 11 W
Inductive load; L = 100 µH
TVJ = 125°C
RthJC
RthJH
0.32 K/W
0.45 K/W
© 2000 IXYS All rights reserved
2 - 3
VVZB 120
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IR
VR = VRRM
,
TVJ = 25°C
0.75 mA
VR = 0.8 VRRM,TVJ = 150°C
3
7
2.55
1.65
mA
V
VF
IF = 30 A, TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
18.2 mW
IRM
IF
= 30 A, -diF/dt = 240 A/µs
16
40
18
A
VR = 100 V
trr
IF = 1 A,
-diF/dt = 100 A/µs
60 ns
VR = 30 V
RthJC
RthJH
1.1 K/W
1.5 K/W
Common Specification
Maximum Ratings
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
°C
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
Md
Mounting torque
(M5)
2-2.5
Nm
(10-32 unf)
18-22
lb.in.
Weight
typ.
80
g
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
11
50
mm
mm
m/s2
R25
Thermistor
2.1
kW
B25/100
3560
K
Dimensions in mm (1 mm = 0.0394")
© 2000 IXYS All rights reserved
3 - 3
相关型号：
VVZB120-12IO2
Silicon Controlled Rectifier, 77A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 3 Element, MODULE-11
IXYS
VVZB120-14IO1
Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
IXYS
VVZB120-16IO1
Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
IXYS
VVZB120-16IO2
Silicon Controlled Rectifier, 77A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 3 Element, MODULE-11
IXYS
VVZB120-16IOX
Silicon Controlled Rectifier, 120000mA I(T), 1600V V(DRM), 1600V V(RRM), 3 Element, V2-PACK-11
IXYS
VVZB135-16IOXT
Silicon Controlled Rectifier, 1600V V(RRM), 3 Element, ROHS COMPLIANT MODULE-22
LITTELFUSE
VVZB135-16NO1
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
IXYS
©2020 ICPDF网 联系我们和版权申明