VVZB120-16IOX [IXYS]
Silicon Controlled Rectifier, 120000mA I(T), 1600V V(DRM), 1600V V(RRM), 3 Element, V2-PACK-11;
| 型号： | VVZB120-16IOX |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 120000mA I(T), 1600V V(DRM), 1600V V(RRM), 3 Element, V2-PACK-11 局域网 栅 双极性晶体管 栅极 |
| 文件： | 总7页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VVZB120-16ioX
3~
Rectifier
Brake
Chopper
Thyristor Module
VRRM
VCES
= 1200
= 1600
IDAV
180
700
IC25
180
1.7
=
=
=
=
IFSM
VCE(sat)
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit
Part number
VVZB120-16ioX
Backside: isolated
O1
S1
E1
I1
M1
W1
L7
G7
C7
O10
W10
V2-Pack
Features / Advantages:
Applications:
Package:
● Package with DCB ceramic base plate
● Improved temperature and power cycling
● Planar passivated chips
● 3~ Rectifier with brake unit
for drive inverters
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
3600
● Very low forward voltage drop
● Very low leakage current
● Soldering pins for PCB mounting
● Height: 17 mm
● X2PT - 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
- short circuit rated for 10 µsec.
- very low gate charge
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
- low EMI
- square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design
results in a competitive low VCE(sat) and low
thermal resistance
Terms and Conditions of Usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1700
1600
50
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1600 V
VR/D =1600 V
IT = 60 A
IT = 180 A
IT = 60 A
IT = 180 A
TC = 85°C
rectangular
µA
reverse current, drain current
20 mA
forward voltage drop
1.27
V
V
V
V
A
VT
1.90
1.25
2.04
180
TVJ
=
°C
125
bridge output current
threshold voltage
TVJ = 150°C
TVJ = 150°C
IDAV
d = ⅓
0.83
V
VT0
for power loss calculation only
slope resistance
6.9 mΩ
0.5 K/W
K/W
rT
RthJC
RthCH
Ptot
ITSM
thermal resistance junction to case
thermal resistance case to heatsink
0.100
TC = 25°C
TVJ = 45°C
VR = 0 V
250
700
755
595
645
W
A
A
A
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
TVJ = 150°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
2.45 kA²s
2.37 kA²s
1.77 kA²s
1.73 kA²s
pF
TVJ = 150°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 150°C
54
CJ
10
5
W
W
W
PGM
max. gate power dissipation
tP = 300 µs
0.5
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 150°C; f = 50 Hz
repetitive, IT = 180 A
150 A/µs
(di/dt)cr
0.45
tP = 200 µs;diG /dt =
A/µs;
IG = 0.45A; V = ⅔ VDRM
V = ⅔ VDRM
non-repet., IT = 60 A
TVJ = 150°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 150°C
1.5
1.6
V
V
gate trigger current
VD = 6 V
95 mA
IGT
200 mA
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0.2
V
VGD
IGD
IL
10 mA
tp = 10 µs
TVJ = 25°C
450 mA
IG = 0.45A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
holding current
TVJ = 25°C
TVJ = 25°C
200 mA
IH
gate controlled delay time
VD = ½ V
2
µs
tgd
DRM
IG = 0.45A; diG/dt = 0.45 A/µs
turn-off time
VR = 100 V; IT = 60 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs µs
150
µs
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Ratings
Brake IGBT + Diode
Symbol
VCES
Definition
Conditions
min. typ. max. Unit
collector emitter voltage
TVJ
=
25°C
1200
20
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
30
V
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
180
140
500
2.1
A
A
IC80
total power dissipation
W
V
P
tot
collector emitter saturation voltage
IC = 100 A; VGE = 15 V
1.7
1.9
6.8
VCE(sat)
V
gate emitter threshold voltage
collector emitter leakage current
IC = 4 mA; VGE = VCE
VCE = VCES; VGE = 0 V
6
7.5
V
VGE(th)
ICES
0.1 mA
mA
0.1
gate emitter leakage current
total gate charge
VGE = 20 V
500
nA
nC
ns
IGES
VCE = 600 V; V = 15 V; IC =100 A
GE
340
230
70
QG(on)
td(on)
tr
turn-on delay time
current rise time
ns
inductive load
TVJ = 125°C
turn-off delay time
380
230
12.5
11.5
ns
td(off)
tf
VCE =600 V; IC = 100 A
VGE = 15 V; RG = 6.8 Ω
current fall time
ns
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
mJ
mJ
Eon
Eoff
VGE = 15 V; RG = 6.8 Ω
TVJ = 125°C
TVJ = 125°C
RBSOA
ICM
VCEK = 1200 V
300
10
A
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCEK = 1200 V
VCE = 720 V; V = 15 V
GE
µs
A
short circuit current
RG = 6.8Ω; non-repetitive
450
ISC
thermal resistance junction to case
thermal resistance case to heatsink
0.25 K/W
K/W
RthJC
RthCH
0.10
Brake Diode
max. repetitive reverse voltage
TVJ = 25°C
TC = 25°C
1200
48
V
A
A
V
V
VRRM
IF25
IF80
VF
forward current
forward voltage
reverse current
32
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
IF = 30 A
2.75
1.60
V = VRRM
R
0.25 mA
IR
1
mA
µC
A
reverse recovery charge
VR = 600 V
-diF /dt = 1000A/µs
IF = 30A
5.2
50
Qrr
max. reverse recovery current
reverse recovery time
TVJ = 125°C
IRM
300
1.9
ns
trr
reverse recovery energy
mJ
Erec
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
0.9 K/W
K/W
0.3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Ratings
Package V2-Pack
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
100
150
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
76
Weight
MD
2
2.5 Nm
mounting torque
terminal to terminal
terminal to backside
6.0
12.0
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
3600
3000
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
yywwAA
Part Number
Lot.No: xxxxxx
UL Date code Prod. Index
Ordering
Ordering Number
Marking on Product
VVZB120-16ioX
Delivery Mode
Quantity Code No.
511152
Standard
VVZB120-16ioX
Box
6
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Thyristor
Brake
Diode
V0
I
R0
threshold voltage
slope resistance *
0.83
3.7
1.31
8
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Outlines V2-Pack
Remarks:
Detail Y
M 5:1
Detail X
M 2:1
EJOT PT® self-tapping screws of the dimension K25 are
recommended for the mechanical connection between module
and PCB. Choose the right length according to your board
thickness at a maximum depth of 6 mm of the module holes.
The recommended mounting torque is 1.5 Nm.
Ø1.5 (DIN 46 431)
ꢀ
Ø 6.1
Ø 2.5
£0.5 0.2
Ø 2.1
65
93
38
40.4
0.3
78.5
24.2 0.3
16.6 0.3
11.7 0.3
7.1 0.3
28.8 0.3
16.8 0.3
0.3
9.8
0.3
4x45°
2.4
0.8 0.3
R1
1
2
3
1
2
3
4
5
6
7
4
5
6
7
8
9
8
9
10
10
0.15
40
80 0.3
0.5
Marking
O1
S1
E1
I1
M1
W1
L7
G7
C7
O10
W10
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Thyristor
200
600
500
400
300
200
3000
2500
2000
1500
TVJ = 125°C
TVJ 25°C
=
150
TVJ = 45°C
TVJ= 45°C
I2t
IF
IFSM
[A]
100
TVJ = 150°C
[A2s]
1000
[A]
TVJ= 150°C
50
500
0
50Hz, 80% VRRM
0
1
2
3
4 5 6 7 8 9
0.0
0.5
1.0
1.5
2.0
0.001
0.01
0.1
1
VF [V]
t [s]
t [ms]
Fig. 3 I2t vs. time per thyristor
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
10
1000
100
160
140
120
100
T
VJ = 25°C
1: IGT
T
VJ = 125°C
,
2: IGT, TVJ
= 25°C
DC =
1
3: IGT, TVJ = -40°C
0.5
typ.
Limit
0.4
0.33
0.17
0.08
6
IT(AV)M
VG
[V]
tgd
5
1
80
60
40
20
0
[μs]
[A]
4
3
2
10
1
4: PGAV = 0.5 W
5: PGM
6: PGM
=
=
5 W
IGD
T
= 125°C
4
,
10 W
0.1
100
1
10
101
102
103
104
100
1000
0
50
100
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per thyristor
150
IG [mA]
IG [mA]
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger delay time
0.6
DC =
1
RthA
:
120
100
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0.5
0.5
0.4
0.33
0.17
0.4
80 0.08
ZthJC
0.3
[K/W]
Constants for ZthJC calc.:
Ptot
[W]
60
40
20
0
i
Rth (K/W)
ti (s)
0.2
0.1
0.0
1
2
3
4
5
0.040
0.003
0.140
0.120
0.197
0.004
0.010
0.030
0.300
0.080
0
20
40
60
80
0
50
100
150
1
10
100
t [ms]
1000
10000
IT(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
VVZB120-16ioX
Brake IGBT + Diode
200
150
100
200
200
150
100
50
VGE = 19 V
17 V
13 V
VCE = 20 V
15 V
150
25°C
11 V
IC
IC
125°C
TVJ = 150°C
IC
[A]
100
[A]
[A]
125°C
25°C
50
0
50
9 V
0
0
6
7
8
9
10 11 12 13
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
1
2
3
4
VCE [V]
VCE [V]
VGE [V]
Fig. 3 Typ. transfer charact.
IGBT
Fig.1 Output characteristics IGBT
Fig.2 Typ. output characteristics
IGBT
60
50
40
30
20
10
0
40
30
400
50
40
500
RG = 6.8
RG = 6.8
VCE = 600 V
VCE = 600 V
VGE
= 15 V
VGE
= 15 V
TVJ = 125°C
TVJ = 125°C
400
300
td(off)
Eoff
30
t
td(on)
300
Eon
20
[mJ]
tr
200
IF
[A]
[ns]
[mJ]
20
tf
[ns]
200
100
0
125°C
tr
10
100
10
0
25°C
Eoff
Eon
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
50
100
150
200
0
50
100
150
200
IC [A]
IC [A]
VF [V]
Fig. 6 Typ. forward characteristics
Diode
Fig. 4 Typ. turn-on energy & switch.
times vs. collector current
Fig. 5 Typ. turn-off energy & switch.
times vs. collector current
1
8
6
4
2
0
80
2.5
125
RG = 6.8
TVJ = 125°C
Diode
VR = 600 V
VR = 600 V
TVJ = 125°C
IF
=
30 A
Erec
2.0
Erec
1.5
100
75
Irr
60
IGBT
Erec
ZthJC
0.1
[K/W]
Irr
40
[A]
[mJ]
Irr
[mJ]
1.0
50
Irr
[A]
IGBT
Diode
ti
20
R
t
i
Ri
i
0.5
0.0
25
0
0.050 0.0010
0.035 0.0100
0.365 0.0050
0.180 0.0003
0.120 0.0300 0.255 0.0397
0.045 0.0800
Erec
0.100 0.1000
0.01
0.001
0
0.01
0.1
1
0
10 20 30 40 50 60
4
8
12
16
20
24
IF [A]
RG [Ohm]
t [s]
Fig. 9 Transient thermal
resistance junction to case
Fig. 8 Typ. reverse recovery
characteristics Diode
Fig. 7 Typ. reverse recovery
characteristics Diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170405f
© 2017 IXYS all rights reserved
相关型号：
VVZB135-16IOXT
Silicon Controlled Rectifier, 1600V V(RRM), 3 Element, ROHS COMPLIANT MODULE-22
LITTELFUSE
VVZB135-16NO1
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
IXYS
VVZB135-16NO1
Silicon Controlled Rectifier, 211.95A I(T)RMS, 1600V V(RRM), 3 Element, MODULE-22
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明