VVZB120-16IO2(T) [LITTELFUSE]
Silicon Controlled Rectifier, 77A I(T)RMS, 1600V V(RRM), 3 Element,;
| 型号： | VVZB120-16IO2(T) |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 77A I(T)RMS, 1600V V(RRM), 3 Element, 局域网 栅 双极性晶体管 栅极 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VVZB 120
VRRM = 1200/1600 V
IdAV = 120 A
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
Preliminary data
VRRM
Type
V
1200
1600
VVZB 120-12 io2(T)
VVZB 120-16 io2(T)
(T) = NTC optional
Symbol
Conditions
Maximum Ratings
Features
• Soldering connections for PCB
mounting
IdAV
IFRMS/ITRMS
Tcase= 80°C, sinusoidal 120°
Tcase= 80°C, per leg
120
77
A
A
• Isolation voltage 3600 V~
• Ultrafast freewheel diode
• Convenient package outline
• Optional NTC
IFSM/ITSM
TVJ = 25°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0 V
750
670
A
A
I2t
TVJ = 25°C,
TVJ = 150°C,
t = 10 ms, VR = 0 V
t = 10 ms, VR = 0V
2810
2240
A
A
Applications
(di/dt)cr
TVJ = TVJM
f = 50 Hz, tP = 200 µs
repetitive, IT = 150 A
150
A/µs
• Drive Inverters with brake system
VD = 2/3 VDRM
IG = 0.45 A,
diG/dt = 0.45 A/µs
Advantages
non repetitive, IT = Id(AV) /3
500
A/µs
V/µs
• 2 functions in one package
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
1000
TVJ = TVJM
IT = Id(AV) /3
tP = 30 µs
tP = 300 µs
tP = 10 ms
10
5
1
W
W
W
PGAVM
0.5
W
VCES
VGE
TVJ = 25°C to 150°C
Continuous
1200
20
V
V
IC25
IC80
ICM
Tcase = 25°C, DC
Tcase = 80°C, DC
140
100
280
A
A
A
tp = Pulse width limited by TVJM
Tcase = 80°C
Ptot
570
W
V
VRRM
1200
IF(AV)
IF(RMS)
IFRM
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, rectangular d = 0.5
Tcase = 80°C, tP = 10 µs, f = 5 kHz
27
38
tbd
A
A
A
IFSM
TVJ = 45°C,
TVJ = 150°C,
t = 10 ms
t = 10 ms
200
180
A
A
Ptot
Tcase = 80°C
64
W
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1 - 4
VVZB 120
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IR, ID
VR = VRRM/VDRM
VR = VRRM/VDRM; TVJ = 150°C
0.3
mA
5
mA
V
VF, VT
IF = 100 A
1.47
VT0
rT
For power-loss calculations only
TVJ = 150°C
0.85
5
V
mΩ
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
VJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
100 mA
200 mA
V
V
T
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
10 mA
V
IL
VD = 6 V; tG = 30 µs
450 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IH
TVJ = TVJM; VD = 6 V; RGK = ∞
200 mA
tgd
VD = ½ VDRM
2
µs
diG/dt = 0.45 A/µs; IG = 0.45 A
tq
TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs
dv/dt = 10 V/µs; IT = 120 A; -di/dt = 10 A/µs
150 µs
QS
IRM
TVJ = TVJM
-di/dt = 0.64 A/µs; IT/IF = 50 A
90 µC
11
A
RthJC
RthJH
per thyristor/diode; sine 120° el.
per thyristor/diode; sine 120° el.
1 K/W
1.3 K/W
VBR(CES)
VGE(th)
VGS = 0 V; IC = 1 mA
IC = 4 mA
1200
4.5
V
V
6.5
IGES
ICES
VGE
=
20 V
500 nA
0.2 mA
VCE = VCES
VCE = VCES; TVJ = 125°C
1
mA
VCEsat
VGE = 15 V; IC = 50 A
2.1
V
tSC
VGE = 15 V; VCE = 900 V; TVJ = 125°C
10 µs
(SCSOA)
RG = 15 Ω; non repetitive
RBSOA
VGE = 15 V; VCE = 1200 V; TVJ = 125°C
150
A
RG = 15 Ω; Clamped Inductive load; L = 100 µH
Cies
VCE = 25 V; f = 1 MHz; VGE = 0 V
5.7
nF
VCE = 600 V; IC = 50 A
VGE = 15 V; RG = 15 Ω
Inductive load; L = 100 µH
TVJ = 125°C
td(on)
td(off)
Eon
170
680
11
ns
ns
mJ
mJ
Eoff
8
RthJC
RthCH
0.22 K/W
K/W
0.1
© 2006 IXYS All rights reserved
2 - 4
VVZB 120
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
IR
VR = VRRM
;
TVJ = 25°C
0.75 mA
VR = 0.8 VRRM; TVJ = 150°C
3
7
2.55
1.65
mA
V
VF
IF = 30 A; TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
18.2 mΩ
IRM
IF = 30 A; -diF /dt = 240 A/µs
VR = 100 V
16
40
18 A
trr
IF = 1 A; -diF /dt = 100 A/µs
VR = 30 V
60 ns
RthJC
RthJH
1.1 K/W
1.5 K/W
Common Specification
Maximum Ratings
TVJ
TVJM
Tstg
-40...+150 °C
150 °C
-40...+125 °C
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000 V~
3600 V~
Md
Mounting torque
(M5)
(10-32 UNF)
2-2.5 Nm
18-22 lb.in.
Weight
typ.
80
g
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7 mm
11 mm
50 m/s2
min.
typ. max.
5.0 5.25 kΩ
R25
Thermistor
4.75
B25/100
3375
K
© 2006 IXYS All rights reserved
3 - 4
VVZB 120
Dimensions in mm (1 mm = 0.0394")
Detail Y
M 1:ꢀ
Detail X
M 2:ꢀ
Øꢀ01 (DIN 46 4.ꢀ)
Ø 60ꢀ
Ø 201
ꢀ±01±±02
Ø 20ꢀ
61
9.
.8
4±04
±±0.
7801
2402 ±±0.
±±0.
2808 ±±0.
±±0.
ꢀ606
ꢀꢀ07±±0.
ꢀ608
±±0.
908
±±0.
4x41°
70ꢀ±±0.
204
±08 ±±0.
Rꢀ
ꢀ
2
.
ꢀ
2
.
4
1
6
7
4
1
6
7
8
9
8
9
NTC
ꢀ±
ꢀ±
±±0ꢀ1
4±
±±0.
8±
±01
Aufdruck der Typenbezeichnung
(Klebeetikett)
© 2006 IXYS All rights reserved
4 - 4
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