CESD3V3AP [JCST]
Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Unidirectional, 2 Element, Silicon,;
| 型号： | CESD3V3AP |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Trans Voltage Suppressor Diode, 300W, 3.3V V(RWM), Unidirectional, 2 Element, Silicon, 局域网 光电二极管 |
| 文件： | 总2页 (文件大小：1468K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
SOT-23
CESD3V3AP ESD Protection Diode
DESCRIPTION
The CESD3V3AP is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
1
3
2
FEATURES
z
z
z
z
z
z
Stand−off Voltage: 3.3 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @Ta=25℃
Parameter
Limit
Unit
Symbol
±±15
±ꢀ8.
16
IEC61000−4−2(ESD)
Air
KV
Contact
KV
mW
℃/W
℃
ESD voltage
per human body model
225
556
Total power dissipation on FR-5 board (Note 1)
PD
RΘJA
TL
Thermal Resistance Junction−to−Ambient
260
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage Temperature Rang
Tj, Tstg
-55 ~ +150
5
5
5
℃
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
B,Mar,2013
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
IPP
VC
VRWM
IR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VBR
IT
Test Current
IF
Forward Current
VF
Ppk
C
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
IR (μA)
@ VRWM
Max
V
BR (V)
VC
@IPP =1 A
V
C (pF)
Pin 1 to 3
Typ
+
VRWM (V)
IT
Max IPP
Ppk + (W)
Device
@ IT(Note 2)
Device*
Marking
Max
Min
Max
mA
A
Max
CESD3V3AP
3M3
3.3
10
5.0
5.9
1.0
7.5
13.3
300
150
*Other voltages available upon request.
+Surge current waveform per Figure 3
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
B,Mar,2013
相关型号：
CESD3V3D5
Trans Voltage Suppressor Diode, 158W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon,
JCST
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