SS8050D(TO-92) [JCST]
Transistor;
| 型号： | SS8050D(TO-92) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
SS8050 TRANSISTOR (NPN)
1. EMITTER
2. BASE
FEATURES
Power Dissipation
PCM : 1 W (TA=25.)
3. COLLECTOR
: 2 W (TC=25.)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
25
V
5
V
1.5
A
Tj
150
-55-150
℃
℃
Tstg
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
40
25
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100uA, IE=0
V(BR)CEO IC=0.1mA, IB=0
V(BR)EBO IE=100μA, IC=0
V
V
ICBO
ICEO
VCB=40V, IE=0
0.1
0.1
0.1
400
μA
μA
μA
Emitter cut-off current
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=10V, IC=50mA,f=30MHZ
85
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.5
1.2
1
V
V
V
Transition frequency
fT
100
MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
A,Apr,2011
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