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KF5N60P [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
KF5N60P
型号： KF5N60P
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
N沟道MOS场效应
文件： 总7页 (文件大小：97K)
中文：  中文翻译
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KF5N60P/F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF5N60P  
A
O
C
This planar stripe MOSFET has better characteristics, such as fast  
switching time,low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for electronic ballast and  
switching mode power supplies.  
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8+ 0.1  
FEATURES  
_
3.6 0.2  
+
_
2.8+ 0.1  
· VDSS= 600V, ID= 4.5A  
K
P
3.7  
G
H
I
· Drain-Source ON Resistance : RDS(ON)=2.0Ω @VGS = 10V  
· Qg(typ) = 12nC  
M
N
0.5+0.1/-0.05  
1.5  
L
J
_
13.08+ 0.3  
J
K
L
M
N
O
P
D
1.46  
_
1.4 + 0.1  
H
N
_
1.27+ 0.1  
_
2.54+ 0.2  
MAXIMUM RATING (Ta=25℃)  
_
+
4.5 0.2  
_
+
2.4 0.2  
RATING  
_
9.2 + 0.2  
Q
CHARACTERISTIC  
SYMBOL  
UNIT  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
KF5N60P  
KF5N60F  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
600  
V
V
±30  
TO-220AB  
4.5  
2.7  
13  
4.5*  
2.7*  
13*  
ID  
Drain Current  
@TC=100℃  
A
KF5N60F  
IDP  
Pulsed (Note1)  
C
A
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
140  
3.5  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
Peak Diode Recovery dv/dt  
(Note 3)  
_
15.87 0.2  
+
dv/dt  
V/ns  
_
2.54 0.2  
+
_
0.8 0.1  
+
83  
38  
W
W/℃  
℃
Tc=25℃  
Drain Power  
Dissipation  
_
+
3.18  
0.1  
PD  
_
3.3 0.1  
+
F
0.67  
0.3  
Derate above 25℃  
_
G
H
J
12.57 0.2  
+
L
M
_
Tj  
0.5 0.1  
Maximum Junction Temperature  
Storage Temperature Range  
150  
+
R
_
13.0 0.5  
+
Tstg  
_
-55∼ 150  
℃
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
Thermal Characteristics  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.5  
3.3  
62.5  
℃/W  
℃/W  
_
6.68 0.2  
+
_
4.7  
+
_
0.2  
Thermal Resistance, Junction-to-  
Ambient  
62.5  
2.76 0.2  
+
1. GATE  
2. DRAIN  
3. SOURCE  
1
2
3
* : Drain current limited by maximum junction temperature.  
* Single Gauge Lead Frame  
PIN CONNECTION  
(KF5N60P, KF5N60F)  
D
TO-220IS (1)  
G
S
2010. 11. 4  
Revision No : 0  
1/7  
KF5N60P/F  
ELECTRICAL CHARACTERISTICS (Ta=25℃)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Static  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250㎂ , VGS=0V  
600  
-
-
-
V
V/℃  
㎂
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃  
-
-
0.61  
IDSS  
Vth  
VDS=600V, VGS=0V,  
VDS=VGS, ID=250㎂  
VGS=±30V, VDS=0V  
VGS=10V, ID=2.25A  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
-
-
10  
2.5  
-
4.5  
±100  
2.0  
V
IGSS  
-
nA  
RDS(ON)  
-
1.7  
Ω
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
11  
2.8  
4.5  
15  
-
-
-
-
-
-
-
-
-
-
VDS=480V, ID=4.5A  
VGS=10V  
Gate-Source Charge  
Gate-Drain Charge  
nC  
(Note4,5)  
(Note4,5)  
Turn-on Delay time  
VDD=300V  
ID=4.5A  
RG=25Ω  
Turn-on Rise time  
16  
ns  
pF  
A
td(off)  
tf  
Turn-off Delay time  
Turn-off Fall time  
30  
15  
Ciss  
Coss  
Crss  
Input Capacitance  
520  
60  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
5.5  
IS  
ISP  
VSD  
trr  
-
-
-
-
-
-
-
4.5  
18  
1.4  
-
VGS<Vth  
IS=4.5A, VGS=0V  
-
V
ns  
270  
1.8  
IS=4.5A, VGS=0V,  
dIs/dt=100A/㎲  
Qrr  
-
μC  
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L=12.7mH, IS=4.5A, VDD=50V, RG=25Ω , Starting Tj=25℃.  
Note 3) IS≤ 4.5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.  
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.  
Note 5) Essentially independent of operating temperature.  
Marking  
1
1
KF5N60  
KF5N60  
2
001  
F
2
001  
P
1
2
PRODUCT NAME  
LOT NO  
2010. 11. 4  
Revision No : 0  
2/7  
KF5N60P/F  
Fig1. I - V  
D
Fig2. I - V  
D
GS  
DS  
100  
10  
V
=30V  
DS  
101  
100  
10-1  
V
=10V  
GS  
V
=7V  
GS  
TC=100 C  
25 C  
V
=5V  
GS  
1
0.1  
0.1  
10  
Drain - Source Voltage VDS (V)  
2
4
6
8
10  
1
100  
Gate - Source Voltage VGS (V)  
Fig3. BV  
- T  
Fig4. R  
- I  
DSS  
j
DS(ON)  
D
1.2  
1.1  
1.0  
0.9  
0.8  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0
VGS = 0V  
IDS = 250  
V
=6V  
GS  
V
=10V  
GS  
100  
-100  
-50  
0
50  
150  
0
2
4
6
8
10  
12  
Junction Temperature Tj (  
)
Drain Current ID (A)  
C
Fig6. R  
- T  
j
DS(ON)  
Fig5. I - V  
S
SD  
102  
101  
100  
10-1  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
=10V  
GS  
= 2.5A  
DS  
TC=100 C  
25 C  
-100  
-50  
0
50  
100  
150  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
(V)  
Junction Temperature T (  
j
)
C
Source - Drain Voltage VSD  
2010. 11. 4  
Revision No : 0  
3/7  
KF5N60P/F  
Fig 7. C - V  
DS  
Fig8. Q - V  
g
GS  
12  
10  
8
1000  
100  
10  
ID=4.5A  
C
C
iss  
V
= 480V  
DS  
6
oss  
4
2
C
rss  
1
0
2
6
8
14  
16  
0
4
10  
12  
(nC)  
0
5
10  
15  
20  
25  
30  
35  
40  
Gate - Charge  
Q
g
Drain - Source Voltage VDS (V)  
Fig9. Safe Operation Area  
Fig10. Safe Operation Area  
(KF5N60P)  
(KF5N60F)  
102  
101  
100  
10-1  
102  
102  
101  
100  
10-1  
102  
Operation in this  
area is limited by RDS(ON)  
Operation in this  
area is limited by RDS(ON)  
10µs  
10µs  
100µs  
100µs  
1ms  
10ms  
DC  
1ms  
10ms  
DC  
T = 25  
T = 25  
C
c
C
T = 150  
j
C
c
C
T = 150  
j
Single pulse  
Single pulse  
102  
103  
102  
103  
100  
101  
100  
101  
Drain - Source Voltage V  
(V)  
Drain - Source Voltage V  
(V)  
DS  
DS  
Fig11. I - T  
D
j
6
5
4
3
2
1
0
25  
50  
75  
100  
125  
)
150  
Junction Temperature T  
(
C
j
2010. 11. 4  
Revision No : 0  
4/7  
KF5N60P/F  
Fig12. Transient Thermal Response Curve  
(KF5N60P)  
10-1  
100  
Duty=0.5  
0.2  
0.1  
P
DM  
0.05  
t
10-1  
1
t
2
- Duty Factor, D= t1/t2  
Tj(max) - Tc  
- RthJC  
=
PD  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
Fig13. Transient Thermal Response Curve  
(KF5N60F)  
10-1  
Duty=0.5  
100  
0.2  
0.1  
0.05  
P
DM  
t
10-1  
1
t
2
- Duty Factor, D= t1/t2  
Tj(max) - Tc  
- RthJC  
=
PD  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
2010. 11. 4  
Revision No : 0  
5/7  
KF5N60P/F  
Fig14. Gate Charge  
V
GS  
10 V  
Fast  
Recovery  
Diode  
I
D
0.8 V  
DSS  
I
D
1.0 mA  
Q
V
Q
Q
DS  
gd  
gs  
Q
g
V
GS  
Fig15. Single Pulsed Avalanche Energy  
BV  
1
2
DSS  
2
E
AS  
=
LIAS  
BV  
- V  
DSS  
DD  
BVDSS  
L
I
AS  
50V  
25Ω  
ID(t)  
VDS  
V
GS  
VDD  
VDS(t)  
10 V  
Time  
t
p
Fig16. Resistive Load Switching  
VDS  
90%  
R
L
0.5 V  
DSS  
10%  
VGS  
td(off)  
25 Ω  
t
td(on)  
ton  
r
t
f
V
DS  
toff  
V
GS  
10V  
2010. 11. 4  
Revision No : 0  
6/7  
KF5N60P/F  
Fig17. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
di/dt  
I
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.5  
V
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
V
GS  
10V  
Body Diode Forword Voltage drop  
2010. 11. 4  
Revision No : 0  
7/7  

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