KTD1882 [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING); 外延平面NPN晶体管（音频功放低速切换）
| 型号： | KTD1882 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
B
C
FEATURES
ᴌComplementary to KTB1772.
DIM MILLIMETERS
N
A
B
C
D
E
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
E
K
D
G
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
F
G
H
J
K
L
0.85
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
0.45
_
H
14.00 +0.50
Collector-Base Voltage
40
0.55 MAX
2.30
0.45 MAX
1.00
F
F
M
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
N
3
1
2
5
V
1. EMITTER
2. COLLECTOR
3. BASE
DC
Collector Current
Pulse (Note)
3
7
A
ICP
IB
Base Current (DC)
0.6
A
mW
ᴱ
TO-92
PC
Collector Power Dissipation
Junction Temperature
625
Tj
150
Tstg
Storage Temperature Range
-55ᴕ150
ᴱ
Note : Pulse Width ⏊10mS, Duty Cycle⏊50%.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
-
MAX.
UNIT
ỌA
VCB=30V, IE=0
VEB=3V, IC=0
Collector Cut-off Current
IEBO
-
1
1
Emitter-Cut-off Current
-
30
100
-
-
ỌA
hFE(1)
VCE=2V, IC=20mA
150
160
0.3
1.0
90
-
DC Current Gain
*
hFE(2) (Note) VCE=2V, IC=1A
400
0.5
2.0
-
VCE(sat)
VBE(sat)
fT
IC=2A, IB=0.2A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
*
*
V
V
IC=2V, IB=0.2A
-
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
-
MHz
pF
Cob
-
45
-
* Pulse Test : Pulse Widthᴪ350ỌS, Duty Cycleᴪ2% Pulsed
Note: hFE(2) Classification O:100ᴕ200 , Y:160ᴕ320 , GR:200ᴕ400
2000. 12. 8
Revision No : 0
1/2
KTD1882
I C - VCE
hFE - IC
2.0
1.6
1.2
0.8
0.4
0
1K
500
300
I
=10mA
B
I
=9mA
B
B
I
V
=2V
CE
=8mA
100
I =7mA
B
I
=6mA
50
30
B
I
=5mA
B
I
=4mA
B
10
I
=3mA
B
5
3
I
I
=2mA
=1mA
B
B
1
0
4
8
12
16
CE
2
0
1
3
5 10
30 50 100 300
1K
3K 5K
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V
(V)
VCE(sat) ,VBE(sat) - I
f T - I C
C
1K
500
300
1K
V
BE
(sat)
500
300
V
CE
=5V
100
50
30
100
50
30
V
CE
(sat)
10
5
3
10
5
3
I
/I =10
B
C
1
1
0.01
0.03
0.3
1
3
10
0.1
1
3
10
30
100
300
1K
3K
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (A)
C
PC - Ta
Cob - VCB
1K
700
f=1MHz
E
I
=0
500
300
600
500
400
300
200
100
0
100
50
30
10
5
3
1
0
25
50
75
100
125
150
1
3
10
30
100
300
1K
CB
3K
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE V
(V)
2000. 12. 8
Revision No : 0
2/2
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