KI5406DC [KEXIN]
N-Channel 2.5-V (G-S) MOSFET; N沟道2.5 -V （G -S ）的MOSFET
| 型号： | KI5406DC |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | N-Channel 2.5-V (G-S) MOSFET |
| 文件： | 总2页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
N-Channel 2.5-V (G-S) MOSFET
KI5406DC
Features
TrenchFET Power MOSFETS: 2.5-V Rated
Low Thermal Resistance
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
5 secs
Steady State
12
Unit
V
Gate-Source Voltage
8
VGS
9.5
6.9
TA = 25
ID
Continuous Drain Current (TJ = 150 ) *
TA = 85
A
Pulsed Drain Current
20
IDM
IS
Continuous Source Current *
2.1
2.5
1.3
1.1
1.3
0.7
TA = 25
TA = 85
Maximum Power Dissipation *
PD
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Parameter
-55 to 150
260
TJ, Tstg
Symbol
RthJA
Typ
40
Max
50
Unit
/W
t
5 sec
Maximum Junction-to-Ambienta
Steady-State
Steady-State
80
95
Maximum Junction-to-Foot (Drain)
RthJF
15
20
* Surface Mounted on 1" X 1' FR4 Board.
1
www.kexin.com.cn
SMD Type
IC
KI5406DC
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Testconditons
Min
0.6
Typ
Max
Unit
V
VGS(th) VDS = VGS, ID = 1.2mA
IGSS
IDSS
ID(on)
rDS(on)
nA
A
VDS = 0 V, VGS = 8 V
100
1
VDS = 9.6 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Current*
5
VDS = 9.6V, VGS = 0 V, TJ = 85
A
20
A
VDS
5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 6.9A
VGS = 2.5 V, ID = 2A
VDS = 10 V, ID = 6.9A
IS = 1.1 A, VGS = 0 V
0.017
0.021
30
0.028
0.039
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
0.7
13.7
2.3
4.1
17
V
20
nC
nC
nC
ns
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = 6V, VGS = 4.5 V, ID = 6.9 A
Turn-On Delay Time
Rise Time
25
70
80
45
70
46
VDD = 6 V, RL = 6
Turn-Off Delay Time
Fall Time
td(off)
tf
54
ID = 1 A, VGEN = 4.5V, RG = 6
29
Source-Drain Reverse Recovery Time
trr
35
IF = 1.1 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2%.
2
www.kexin.com.cn
相关型号：
KI5515DC
TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint
TYSEMI
©2020 ICPDF网 联系我们和版权申明