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KO3402 [KEXIN]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
KO3402
型号： KO3402
厂家： GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总2页 (文件大小：54K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SMD Type  
MOSFET  
N-Channel Enhancement Mode  
Field Effect Transistor  
KO3402(AO3402)  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
VDS (V) = 30V  
ID = 4 A  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
RDS(ON)  
RDS(ON)  
RDS(ON)  
55m (VGS = 10V)  
70m (VGS = 4.5V)  
110m (VGS = 2.5V)  
+0.1  
1.9  
-0.1  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current TA=25  
TA=70  
Symbol  
VDS  
Rating  
Unit  
V
30  
VGS  
V
12  
4
3.4  
ID  
A
Pulsed Drain Current  
IDM  
PD  
15  
1.4  
Power Dissipation  
TA=25  
TA=70  
W
1
Thermal Resistance.Junction-to-Ambient  
Thermal Resistance.Junction-to-Case  
Junction and Storage Temperature Range  
R
R
JA  
JC  
125  
80  
/W  
/W  
TJ, TSTG  
-55 to 150  
1
www.kexin.com.cn  
SMD Type  
MOSFET  
KO3402(AO3402)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
ID=250 A, VGS=0V  
Min  
30  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
VDSS  
VDS=24V, VGS=0V  
1
5
Zero Gate Voltage Drain Current  
IDSS  
A
VDS=24V, VGS=0V ,TJ=55  
VDS=0V, VGS= 12V  
Gate-Body leakage current  
Gate Threshold Voltage  
IGSS  
nA  
V
100  
1.4  
55  
80  
70  
110  
VGS(th)  
0.6  
1
VDS=VGS ID=250  
VGS=10V, ID=4A  
VGS=10V, ID=4A  
VGS=4.5V, ID=3A  
VGS=2.5V, ID=2A  
A
45  
66  
55  
83  
m
TJ=125  
Static Drain-Source On-Resistance  
RDS(ON)  
m
m
On state drain current  
ID(ON)  
gFS  
Ciss  
Coss  
Crss  
Rg  
VGS=4.5V, VDS=5V  
VDS=5V, ID=4A  
10  
A
Forward Transconductance  
Input Capacitance  
8
S
390  
54.5  
41  
pF  
pF  
pF  
VGS=0V, VDS=15V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
VGS=4.5V, VDS=15V, ID=-4A  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
3
Total Gate Charge  
Qg  
4.34  
0.6  
1.38  
3.3  
1
nC  
nC  
nC  
ns  
ns  
ns  
ns  
ns  
nC  
A
Gate Source Charge  
Qgs  
Qgd  
tD(on)  
tr  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
VGS=10V, VDS=15V, RL=3.75 ,RGEN=6  
Turn-Off DelayTime  
tD(off)  
tf  
21.7  
2.1  
12  
Turn-Off Fall Time  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Maximum Body-Diode Continuous Current  
Diode Forward Voltage  
trr  
IF=4A, dI/dt=100A/  
IF=4A, dI/dt=100A/  
s
s
Qrr  
6.3  
IS  
2.5  
1
VSD  
IS=1A,VGS=0V  
0.8  
V
2
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