KTA1046_15 [KEXIN]
PNP Transistors;
| 型号： | KTA1046_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：1275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
PNP Transistors
KTA1046
Unit: mm
TO-220F
±0.20
±0.20
±0.20
20
.
2.54
8±0
1
±0.20
0.70
φ3.
■ Features
● Low saturation voltage and good linearity of hFE.
● Complementary to KTC2026
±0.20
2.76
1.47max
±0.20
0.50
±0.20
0.80
1. Base
2. Collector
3. Emitter
2.54typ
2.54typ
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-60
V
-60
-7
I
C
-3
-0.5
A
I
B
2
Collector Power Dissipation
Ta = 25℃
Tc = 25℃
P
C
W
℃
25
Junction Temperature
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-60
-60
-7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -10 mA， I
Ic= -50 mA，I
= -10 mA， I
CB= -60V , I =0
EB= -7V , I =0
E
=0
=0
=0
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-2 A, I
B
=-200mA
=-200mA
V
C
=-2 A, I
B
-1.2
-1
V
BE
V
V
V
CE= -5V, I
CE= -5V, I
CE= -5V, I
C= -500 mA
C= -500 mA
C= -3 A
hFE(1)
100
20
300
DC current gain
hFE(2)
Turn-on Time
Storage Time
Fall Time
ton
tstg
tf
0.4
1.7
0.5
us
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -10V, I
E
= 0,f=1MHz
45
30
pF
f
CE= -5V, I = -500mA
C
MHz
■ Classification of hfe(1)
Type
KTA1046-Y
KTA1046-G
160-300
Range
100-200
1
www.kexin.com.cn
DIP Type
Transistors
PNP Transistors
KTA1046
■ Typical Characterisitics
2
www.kexin.com.cn
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KEC
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