STK830D [KODENSHI]
Power Field-Effect Transistor,;型号: | STK830D |
厂家: | KODENSHI KOREA CORP. |
描述: | Power Field-Effect Transistor, |
文件: | 总8页 (文件大小:465K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STK830D
Semiconductor
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
PIN Connection
Features
• High Voltage: BVDSS=500V(Min.)
D
• Low Crss : Crss=10pF(Typ.)
• Low gate charge : Qg=17nC(Typ.)
• Low RDS(on) :RDS(on)=1.5Ω(Max.)
D
G
Ordering Information
G D S
S
Type No.
Marking
Package Code
TO-252
STK830D
STK830
TO-252
Absolute maximum ratings
Characteristic
(Tc=25°C)
Symbol
VDSS
Rating
500
Unit
Drain-source voltage
Gate-source voltage
V
V
VGSS
±30
TC=25℃
TC=100℃
IDM
4.5
A
Drain current (DC) *
ID
3.58
18
A
*
Drain current (Pulsed)
A
Drain power dissipation
PD
IAS
EAS
IAR
EAR
TJ
48
W
A
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
②
②
①
①
4.5
250
mJ
A
4.5
5.0
mJ
°C
°C
150
Storage temperature range
Tstg
-55~150
* Limited by maximum junction temperature
Characteristic
Symbol
Rth(J-C)
Rth(J-A)
Typ.
Max
Unit
Junction-case
-
-
2.6
Thermal
resistance
℃/W
Junction-ambient
62.5
KSD-T6O005-003
1
STK830D
Electrical Characteristics
Characteristic
(Tc=25°C)
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Test Condition
ID=250 ㎂, VGS=0V
ID=250 ㎂, VDS= VGS
VDS=500V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=2.25A
VDS=10V, ID=2.25A
Min. Typ. Max. Unit
Drain-source breakdown voltage
500
-
-
4.0
500
±100
1.5
-
V
Gate threshold voltage
2.0
-
-
V
Drain-source cut-off current
Gate leakage current
-
㎁
㎁
Ω
-
-
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
④
-
-
④
-
3.3
750
80
10
12
46
50
48
17
2.6
5.8
S
Ciss
-
1150
120
15
-
VGS=0V, VDS=25V
f=1 MHz
Coss
-
㎊
㎱
nC
Crss
-
td(on)
tr
td(off)
tf
-
V
DD=250V, ID=4.5A
-
-
RG=12Ω
Turn-off delay time
Fall time
-
-
③④
③④
-
-
Total gate charge
Qg
-
26
4.0
9.0
VDS=250V, VGS=10V
ID=4.5A
Gate-source charge
Gate-drain charge
Qgs
-
Qgd
-
Source-Drain Diode Ratings and Characteristics
(Tc=25°C)
Characteristic
Symbol
Test Condition
Min Typ Max Unit
Source current (DC)
IS
ISP
VSD
trr
-
-
-
-
-
-
4.5
18
1.4
-
Integral reverse diode
in the MOSFET
A
Source current (Pulsed)
Forward voltage
①
④
-
VGS=0V, IS=4.5A
-
V
Reverse recovery time
Reverse recovery charge
270
2.1
㎱
μC
IS=4.5A, VGS=0V
dIS/dt=100A/㎲
Qrr
-
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=22.2mH, IAS=4.5A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse width≤400 ㎲, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T6O005-003
2
STK830D
Electrical Characteristic Curves
Fig. 2 ID - VGS
Fig. 1 ID - VDS
1
Fig. 4 IS - VSD
Fig. 3 RDS(on) - ID
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
℃
KSD-T6O005-003
3
STK830D
Fig. 7 V(BR)DSS - TJ
Fig. 8 RDS(on) - TJ
㎂
C
C
Fig. 10 Safe Operating Area
Fig. 9 ID - TC
*
KSD-T6O005-003
4
STK830D
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Switching Time Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O005-003
5
STK830D
Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform
rr
KSD-T6O005-003
6
STK830D
Outline Dimension
KSD-T6O005-003
7
STK830D
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T6O005-003
8
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