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IXFK64N60P3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFK64N60P3
型号： IXFK64N60P3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 64A  
IXFK64N60P3  
IXFX64N60P3  
RDS(on) 100m  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
600  
600  
V
V
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
64  
160  
A
A
IA  
EAS  
TC = 25C  
TC = 25C  
32  
1.5  
A
J
G
D
S
Tab  
PD  
TC = 25C  
1130  
35  
W
G = Gate  
S = Source  
D
= Drain  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Dynamic dv/dt Rating  
Avalanche Rated  
Fast Intrinsic Diode  
Low QG  
Low RDS(on)  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
600  
V
V
3.0  
5.0  
Applications  
200 nA  
25 A  
DC-DC Converters  
Battery Chargers  
IDSS  
Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 125C  
3
mA  
Uninterrupted Power Supplies  
AC Motor Drives  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
100 m  
High Speed Power Switching  
Applications  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100312B(04/14)  
IXFK64N60P3  
IXFX64N60P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
36  
60  
S
Ciss  
Coss  
Crss  
9.9  
920  
4.0  
nF  
pF  
pF  
RGi  
1.1  
  
: 1 - Gate  
2 - Drain  
td(on)  
tr  
td(off)  
tf  
43  
17  
66  
11  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
3 - Source  
4 - Drain  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
145  
44  
nC  
nC  
nC  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Qgd  
35  
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.11C/W  
0.15C/W  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-Drain Diode  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS 247TM Outline  
IS  
VGS = 0V  
64  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
260  
1.5  
trr  
250  
ns  
μC  
A
IF = 32A, -di/dt = 100A/s  
QRM  
IRM  
1.2  
VR = 100V, VGS = 0V  
12.6  
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK64N60P3  
IXFX64N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
140  
120  
100  
80  
V
= 10V  
7V  
V
GS  
= 10V  
8V  
60  
50  
40  
30  
20  
10  
0
GS  
7V  
6V  
6V  
5V  
60  
40  
20  
5V  
0
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
5
6
7
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
7V  
GS  
V
= 10V  
60  
50  
40  
30  
20  
10  
0
GS  
I
= 64A  
D
6V  
I
= 32A  
D
5V  
4V  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T
J
= 125ºC  
T
J
= 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXFK64N60P3  
IXFX64N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
140  
120  
100  
80  
V
= 300V  
DS  
I
I
= 32A  
D
G
= 10mA  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
100µs  
C
oss  
1
T
= 150ºC  
= 25ºC  
J
1ms  
10  
C
rss  
T
C
Single Pulse  
1
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK64N60P3  
IXFX64N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_64N60P3(K8)03-16-11  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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