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IXGT6N170AHV-TRL [LITTELFUSE]

Insulated Gate Bipolar Transistor,;
IXGT6N170AHV-TRL
型号： IXGT6N170AHV-TRL
厂家： LITTELFUSE    LITTELFUSE
描述：

Insulated Gate Bipolar Transistor,

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Advance Technical Information  
High Voltage  
IGBT  
VCES = 1700V  
IC25 = 6A  
VCE(sat) ≤ 7.0V  
tfi(typ) = 32ns  
IXGT6N170AHV  
TO-268  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
G = Gate  
E = Emiiter  
C
= Collector  
TJ = 25°C to 150°C, RGE = 1MΩ  
Tab = Collector  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
6
3
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
14  
Features  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 33Ω  
ICM = 12  
A
ꢀ
High Blocking Voltage  
High Voltage Package  
(RBSOA)  
Clamped Inductive Load  
0.8 • VCES  
ꢀ
tsc  
VGE= 15V, VCE = 1200V, TJ = 125°C  
10  
μs  
(SCSOA)  
RG = 33Ω, Non Repetitive  
PC  
TC = 25°C  
75  
W
Advantages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
ꢀ
High Power Density  
ꢀ
-55 ... +150  
Easy to Mount  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Weight  
4
g
Applications  
ꢀ
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Welding Machines  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
ꢀ
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
ꢀ
ꢀ
5.0  
10 μA  
500 μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 3A, VGE = 15V, Note 1  
7.0  
V
V
5.4  
DS100476(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGT6N170AHV  
TO-268 (VHV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
gfs  
IC = 6A, VCE = 20V, Note 1  
2.0  
3.5  
S
Cies  
Coes  
Cres  
390  
20  
7
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
PIN:  
Qg(on)  
Qge  
Qgc  
18.5  
2.8  
nC  
nC  
nC  
1 - Gate  
2 - Emitter  
3 - Collector  
IC = 6A, VGE = 15V, VCE = 0.5 • VCES  
8.2  
td(on)  
tri  
Eon  
td(off)  
tfi  
46  
40  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 6A, VGE = 15V  
0.59  
220  
32  
VCE = 0.5 • VCES, RG = 33Ω  
400  
Note 2  
Eoff  
0.18  
0.36 mJ  
td(on)  
tri  
48  
43  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 6A, VGE = 15V  
Eon  
td(off)  
tfi  
0.62  
230  
41  
mJ  
ns  
VCE = 0.5 • VCES, RG = 33Ω  
ns  
Note 2  
Eoff  
0.25  
mJ  
RthJC  
1.65 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGT6N170AHV  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
12  
10  
8
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
6
9V  
7V  
4
7V  
5V  
2
4
0
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 12A  
9V  
6
I C = 6A  
4
7V  
5V  
2
I C = 3A  
0
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
12  
10  
8
18  
16  
14  
12  
10  
8
TJ = 25ºC  
I C = 12A  
6
4
TJ  
=
125ºC  
6A  
3A  
25ºC  
- 40ºC  
2
6
4
0
6
8
10  
12  
14  
16  
18  
20  
3.5  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXGT6N170AHV  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
5
4
3
2
1
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
I C = 6A  
I
G = 1mA  
25ºC  
125ºC  
6
4
2
0
0
2
4
6
8
10  
12  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
1,000  
100  
10  
12  
10  
8
C
ies  
C
oes  
6
4
TJ = 125ºC  
G = 33Ω  
dv / dt < 10V / ns  
C
res  
R
2
= 1 MHz  
5
f
0
1
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
Fig. 12. Forward-Bias Safe Operating Area  
10  
100  
10  
VCE(sat) Limit  
1
25µs  
1
100µs  
0.1  
1ms  
0.1  
0.01  
TJ = 150ºC  
C = 25ºC  
T
10ms  
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
1
10  
100  
1000  
10000  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGT6N170AHV  
Fig. 13. Inductive Switching Energy Loss  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss  
vs. Collector Current  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
VGE = 15V  
E
E
off  
RG = 33  
on - - - -  
off  
Ω ,  
VCE = 850V  
TJ = 125ºC , VGE = 15V  
VCE = 850V  
I C = 12A  
TJ = 125ºC, 25ºC  
I C = 6A  
30  
40  
50  
60  
70  
80  
90  
100  
110  
120  
6
7
8
9
10  
11  
12  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss  
vs. Junction Temperature  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
E
E
on - - - -  
off  
RG = 33  
VGE = 15V  
Ω ,  
VCE = 850V  
I C = 12A  
I C = 6A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_6N170A(2N) 08-12-10-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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