MAX40200AUK+* [MAXIM]
Ultra-Tiny Micropower, 1A Ideal Diode;
| 型号： | MAX40200AUK+* |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Ultra-Tiny Micropower, 1A Ideal Diode |
| 文件： | 总14页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
General Description
The MAX40200 is an ideal diode current-switch that drops
so little voltage that it approaches an order of magnitude
better than Schottky diodes.
Benefits and Features
● Save Critical Voltage Drop in Portable Application
• Drops Less Than 43mV at 500mA; 85mV at 1A
● Longer Battery Life
• Less Than 2µA Leakage When Reverse-Biased
• Low Supply Quiescent Current: 7µA (Typ), 18µA (Max)
When forward-biased and enabled, the MAX40200
conducts with as little as 85mV of voltage drop while carrying
currents as high as 1A. Typical voltage drop is 43mV at
500mA, with the voltage drop increasing linearly at higher
currents. The MAX40200 thermally protects itself, and any
downstream circuitry, from overtemperature conditions.
● Saves Space Over Larger Schottky Diodes
• Tiny 0.73mm x 0.73mm 4-bump WLP
• SOT23-5 Package
● Supply Voltage Range 1.5V to 5.5V
● Thermally Self-Protecting
When disabled (EN = low) the MAX40200 blocks voltages
up to 6V in either direction, making it suitable for most
low-voltage, portable electronic devices. The MAX40200
operates from a supply voltage of 1.5V to 5.5V.
● -40°C to +125°C Temperature Range
The MAX40200 is available in a tiny, 0.73mm X 0.73mm,
4-bump wafer-level package (WLP), with a 0.35mm bump
pitch and only 0.5mm high and 5-pin SOT-23 package.
The MAX40200 operates over the extended -40°C to
+125°C temperature range.
Functional Diagram and Package
V
OUT
DD
Applications
● Notebook and Tablet Computers
● Portable Media Players
● Cellular Phones
EN
● Portable/Wearable Medical Devices
● Electronic Toys
● USB-Powered Peripherals
GND
Ordering Information appears at end of data sheet.
19-8728; Rev 0; 12/16
MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Absolute Maximum Ratings
Any Pin to GND.......................................................-0.3V to +6V
Continuous Current Into EN...............................................10mA
4 WLP
Thermal Resistance (Multi-Layer Board)
Continuous Current Flowing Between V
and OUT
Junction to Ambient (θ ).........................................104.41°C/W
5 SOT-23
Thermal Resistance (Multi-Layer Board)
DD
(WLP Package) ................................................................1.2A
Continuous current flowing between V and OUT
JA
DD
(SOT23-5 Package)..........................................................1.0A
Maximum Power Dissipation
Junction to Ambient (θ ).........................................255.90°C/W
JA
Junction to Case (θ ) ....................................................81°C/W
JC
WLP, Derate 9.58mW/°C above +70°C.......................766mW
SOT, Derate 3.90mW/°C above +70°C..................312.60mW
Operating Temperature Range ........................ -40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range............................ -65°C to +150°C
Reflow Soldering Peak Temperature (Pb-free) ...............+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
V
= 3.3V, GND = 0V, EN = V , T = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)
DD
DD
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
V
DD
Guaranteed by DV
1.5
5.5
V
ON_FRWD
EN = V , I
= 0 mA
7
18
2.5
1.5
3.5
Quiescent Current per
Amplifier
DD FORWARD
I
µA
µA
DD
EN = V
, I
= 0 mA
0.7
GND FORWARD
Current drawn from V ; V
- V
- V
= 0.1V
= 0.1V
-1.5
-5.5
0.072
1.2
Quiescent Current in Reverse
Operation
DD OUT
DD
Current drawn from OUT; V
OUT
DD
Current sourced into V ; V
= 0V,
DD DD
V
DD
Leakage Current
-0.55
18
+2.5
40
µA
V
= 5.5V
OUT
Forward Turn-On Threshold
Voltage
Voltage between V
positive than OUT) I
and OUT (V
more
DD
DD
= 1mA
V
mV
ON_FRWD
FORWARD
Forward Turn-On Threshold
Voltage Change Over Supply
Voltage
DV
V
= 1.5V to 5.5V
-3
+0.2
+3
mV
mV
ON_FRWD
DD
Reverse Turn-Off Threshold
Voltage between V
and V
20
21
VOFF_REV
DD
OUT
I
= 100mA
52
89
FORWARD
V
V
= 1.5V
= 3.3V
45
I
=
DD
FORWARD
Forward Voltage
200mA
V
FWD
24
57
mV
DD
(V
– V
) (WLP Only)
DD
OUT
I
I
= 500mA
= 1A
43
89
FORWARD
85
175
FORWARD
Capacitive Load Range
C
Stable for all load currents
0.3 - 100
154
10
µF
°C
°C
OUT
Thermal Protection Threshold
Thermal Protection Hysteresis
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Electrical Characteristics (continued)
V
= 3.3V, GND = 0V, EN = V , T = -40°C to +125°C, unless otherwise noted. Typical values are at +25°C (Note 2)
DD
DD
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ENABLE (EN) CHARACTERISTICS
Low-Level Input Current
EN = 0V
-1
-0.1
+0.1
0.6
µA
V
Low-Level Voltage Level
High Input Voltage Level
High Level Input Current
Enable Input Hysteresis
LOW
HIGH
1.2
V
EN = V
0.5
50
2.5
µA
mV
DD
I
reaching 90% of its final value
FORWARD
Enable Time
with a resistive load (R
) = 330Ω and
65
µs
OUT
4.7nF, enable input toggled from 0V to 3.3V
I
I
(R
prior to disable = 100mA,
reaching ≤ 1mA resistive load
) = 330Ω and 4.7nF, enable input
FORWARD
FORWARD
Disable Time
1.6
65
ms
µs
OUT
toggled from 0V to 3.3V
Power-Up Delay Time
Note 2: All devices are production tested at T = + 25°C. Specifications over temperature are guaranteed by design
A
Note 3: Guaranteed by design.
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Typical Operating Characteristics
V
= 3.3V, GND = 0V, EN = V , 100mA load or I
and 10µF C on OUT, T = -40°C to +125°C, unless otherwise noted.
OUT A
DD
DD
FORWARD
Typical values are at +25°C.
GROUND CURRENT
vs. FORWARD/ LOAD CURRENT
QUIESCENT SUPPLY CURRENT
vs. SUPPLY INPUT VOLTAGE
toc01
toc02b
24
20
16
12
8
75
Refer to Figure 1 for Test Setup Conditions
IFWD/LOAD = 0mA
V= V
VDD = 3.3V
TA = 125°C
TA = 125°C
50
25
0
TA = 85°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = -40°C
4
TA = -40°C
Refer to Figure 1 for Test Setup Conditions
200 400 600 800
0
0
1
2
3
4
5
6
0
1000
SUPPLY INPUT VOLTAGE (V)
FORWARD/LOAD CURRENT(mA)
GROUND CURRENT
FORWARD VOLTAGE vs. FORWARD CURRENT
vs. FORWARD/ LOAD CURRENT
(WLP)
toc02c
toc03a
100
75
50
25
0
400
300
200
100
0
DD = 1.5V
VDD = 5.5V
V
TA = 125°C
TA = 85°C
Refer to Figure 1 for Test Setup Conditions
TA = 85°C
TA = 125°C
Thermal Limit Reached
TA = 25°C
TA = 25°C
TA = -40°C
TA = -40°C
Refer to Figure 1 for Test Setup Conditions
200 400 600 800
0
1000
0
250
500
750
1000
FORWARD/LOAD CURRENT(mA)
FORWARD CURRENT (mA)
FORWARD VOLTAGE vs. FORWARD CURRENT
FORWARD VOLTAGE vs. FORWARD CURRENT
(WLP)
(SOT)
toc03b
toc03c
700
600
500
400
300
200
100
0
150
125
100
75
VDD = 1.5V
VDD = 3.3V
Refer to Figure 1 for Test Setup Conditions
Refer to Figure 1 for Test Setup Conditions
TA = 85°C
TA = 85°C
TA = 125°C
Themal Limit Reached
TA = 125°C
TA = 25°C
TA = -40°C
50
TA = 25°C
TA = -40°C
25
0
0
250
500
750
1000
0
250
500
750
1000
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Typical Operating Characteristics (continued)
V
= 3.3V, GND = 0V, EN = V , 100mA load or I
and 10µF C
on OUT, T = -40°C to +125°C, unless otherwise noted.
OUT A
DD
DD
FORWARD
Typical values are at +25°C.
FORWARD VOLTAGE vs. FORWARD CURRENT
FORWARD VOLTAGE vs. FORWARD CURRENT
FORWARD VOLTAGE vs. FORWARD CURRENT
(SOT)
(WLP)
(SOT)
toc03d
toc03e
toc03f
300
100
75
50
25
0
250
200
150
100
50
VDD = 3.3V
VDD = 5.5V
VDD = 5.5V
Refer to Figure 1 for Test Setup Conditions
250
Refer to Figure 1 for Test Setup Conditions
TA = 85°C
Refer to Figure 1 for Test Setup Conditions
TA = 85°C
TA = 125°C
TA = 85°C
200
Thermal Limit Reached
TA = 125°C
TA = 125°C
Themal Limit Reached
150
100
50
0
TA = 25°C
TA = -40°C
TA = 25°C
TA = -40°C
TA = 25°C
TA = -40°C
0
0
250
500
750
1000
0
250
500
750
1000
0
250
500
750
1000
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
CATHODE CURRENT
AT REVERSE OPERATION
ANODE CURRENT
AT REVERSE OPERATION
toc04
toc05
5
4.5
4
3
2.5
2
ICATHODE
IANODE
VDD = 0V
VDD = 0V
Refer to Figure 2 for Test Setup Conditions
Refer to Figure 2 for Test Setup Conditions
TA = 85°C
TA = 125°C
3.5
3
TA = 25°C
1.5
1
TA = 85°C
TA = 125°C
2.5
2
1.5
1
0.5
0
TA = 25°C
0.5
0
TA = -40°C
TA = -40°C
-0.5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VOUT (V)
VOUT (V)
GROUND CURRENT
AT REVERSE OPERATION
ANODE CURRENT
AT REVERSE OPERATION
toc06
toc07
2.5
2
0.2
0.15
0.1
VDD = 3.3V
VOUT-VDD = 0.1V
IGND
VDD = 0V
TA = 125°C
TA = 85°C
Refer to Figure 2 for Test Setup Conditions
1.5
1
TA = 25°C
0.05
0
0.5
0
TA = -40°C
-0.05
-0.1
Refer to Figure 2 for Test Setup Conditions
-0.5
0
1
2
3
4
5
6
-40 -25 -10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
VOUT (V)
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Typical Operating Characteristics (continued)
V
DD
= 3.3V, GND = 0V, EN = V , 100mA load or I
and 10µF C on OUT, T = -40°C to +125°C, unless otherwise noted.
OUT A
DD
FORWARD
Typical values are at +25°C.
CATHODE CURRENT
AT REVERSE OPERATION
toc08
3
2.5
2
VDD = 0V
VOUT = 5.5V
Refer to Figure 2 for Test Setup Conditions
1.5
1
0.5
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
ENABLE TRANSIENT
IFWD = 1A
ENABLE TRANSIENT
toc10a
toc10b
IFWD = 100mA
3.3V
3.3V
2V/div
2V/div
V(EN)
V(EN)
3.3V
3.3V
1V/div
1V/div
VOUT
VOUT
CLOAD = 4.7µF
CLOAD = 4.7µF
10μs/div
10μs/div
DISABLE TRANSIENT
IFWD = 1A
DISABLE TRANSIENT
IFWD = 100mA
toc11a
toc11b
3.3V
3.3V
2V/div
2V/div
V(EN)
V(EN)
3.3V
3.3V
1V/div
1V/div
VOUT
VOUT
CLOAD = 4.7µF
CLOAD = 4.7µF
100μs/div
400μs/div
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Test Setup
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Pin Configurations
Pin Description
WLP
A1
5 SOT-23
NAME
FUNCTION
1
5
V
Supply Input or Anode.
DD
A2
OUT
Ideal Diode Output or Cathode.
Enable Input. Pull high to enable the device and pull low to disable the
device. Active pullup.
B1
3
EN
B24
—
2
4
GND
N.C.
Circuit Ground and Substrate Connection.
No Connect. Internally not connected.
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
This control circuitry consumes 7µA typical current and
this limits the rate at which the internal MOSFET can be
turned on/off.
Detailed Description
The MAX40200 mimics a near-ideal diode. The device
blocks reverse-voltages and passes current when forward-
biased just as a normal diode. The improvements are that
instead of a cut-in voltage around 500mV and a logarithmic
voltage-current transfer curve, the MAX40200 has a near
constant voltage drop independent of the magnitude of
the forward current flowing through it. This voltage drop is
around 45mV at 500mA of forward or load current.
To ensure the control loop remains stable for all output
current levels, there should always be a minimum of
0.33µF connected to the OUT output and likewise, a minimum
of 0.33µF on the V
input.
DD
These capacitors also improve the surge capability of
power supply. In general for higher Output Capacitive
Loads [e.g., C
= 10µF], then C should be kept to
The constant forward voltage drop significantly helps with
supply regulation; a normal diode typically drops an additional
60mV for every 10 - x change in current through it.
OUT
IN
C /10 (µF) for optimum transient response.
OUT
Applications Information
Similar to a normal diode, the MAX40200 also becomes
resistive as the forward current exceeds the specified
limit. Unlike a normal diode, should the MAX40200
exceed the specified temperature, it will turn off in order
to protect itself and the circuitry connected to it. Like a
normal diode MAX40200 will turn-off when it is reverse
biased. The turn-on and turn-off times for Enable and dis-
able response are similar to those of forward and reverse
bias conditions.
The simplest application would be as shown in Figure 1,
where the battery has to be disconnected from the load
when the wall-supply is connected. Often, the wall-supply
can handle the additional losses of a normal diode, so it
would use a regular diode to prevent battery power from
flowing back into it.
The battery, on the other hand, benefits significantly by
only losing 30mV when powering the load, thus increasing
the battery life between charging cycles.
MAX40200 has an enable function feature. Unlike a normal
diode the device can be turned off when not required.
When turned off, it blocks voltages on either side to
a maximum of 6V above ground. This feature allows
MAX40200 to be used, to switch supply sources, or to
control which sub-systems are to be powered up.
For systems that require more than the 500mA that the
MAX40200 is specified for, it may be convenient to split
the load up into various sections that could also benefit
from the individual power enabling that the MAX40200’s
Enable pins offer.
It should be noted, however, that, unlike normal diodes,
this “ideal diode” is not suited to rectifying AC. In applications
where the supply is inductively coupled, conventional
diodes should be used for the rectification part of the
circuitry. MAX40200 is designed to be used in applications
to switch between different DC sources.
This also suggests that any integrated circuit without built-
in power-down capability can have it added by powering it
through a MAX40200.
This allows many parts to be used in portable and other
power-sensitive products.
Principle of Operation
The MAX40200 features an internal pMOSFET to pass
the current from the V
input to the OUT output. The
DD
internal MOSFET is controlled by circuitry that:
1) Creates the 18mV constant forward drop when the
MAX40200 is forward-biased
2) Turns the MOSFET off when the part is reverse
biased
3) If the enable pin is pulled low
4) If the part’s temperature exceeds the specified level.
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
DIODE (D1)
FROM WALL ADAPTER
IDEAL DIODE
MAX40200
LOAD
BATTERY
EN
Figure 1. Diode ORing Circuit 1
DIODE (D1)
DIODE (D2)
FROM WALL ADAPTER
IDEAL DIODE (1)
MAX40200
LOAD-A
BATTERY
EN
IDEAL DIODE (2)
MAX40200
LOAD-B
EN
Figure 2. Diode ORing Circuit 2
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
MAX40200
BATTERY
SUB
SUB
SUB
CIRCUIT 1
CIRCUIT 2
CIRCUIT-N
EN
Figure 3. Typical Application Circuit
Package Derate Calculation:
Thermal Performance and Power
Dissipation Information
For 85°C: Maximum Power Dissipation from the data
sheet: 766mW – [(85 - 70) x 9.58] = 622mW. The device is
within specification. Therefore, the junction temperature:
85°C + (104.41°C/W x 0.110W) = 85°C + 11.5°C = 96.5°C
Although the device is guaranteed for T = -40°C to
A
125°C, care must be taken when using heavy loads
(e.g., I
above 500mA to 1A) where the forward
FWD
SOT-23 (Small Outline Transistor Package):
current across the ideal diode is large. The forward voltage
drop across the VDD and OUT pins increases linearly
with forward current. The device’s power dissipation is
directly proportional to the voltage drop across the device.
At 1A I , T
FWD A =
85°C. V
= 250mV, Hence P
=
FWD
DIS
250mW.
Package Derate Calculation:
The power dissipation is going to be the differential
For 85°C: Maximum Power Dissipation from the data
sheet: 312.6mW – [(85 - 70)°C x 3.9mW/°C] = 254.1mW.
The device is very close to the power dissipation ratings
provided in the absolute maximum specification.
voltage (V
) multiplied by the current passed
FWD
by the device (I
). The quiescent current of the
FWD
device is negligible for these calculations. The ambient
temperature is essentially the PCB temperature, since
this is where all the heat is sunk to. Therefore, the
Hence the device’s junction temperature: 85°C +
(255.90°C/W x 0.2541W) = 85°C + 65.02°C = 150.02°C
parts temperature rise is [V
x I x θ ] + T ,
FWD JA A
FWD
where T is the temperature of the board or ambient
A
As the above example shows, the thermal performance of
the WLP exceeds the SOT package.
temperature. From this exercise, we observe that the
internal temperature from power dissipation will be higher
than the ambient temperature. The device has an internal
thermal shutdown temperature of about +154°C and,
typically, 12°C hysteresis.
When the device’s junction temperature rises to 154°C
thermal trip is triggered, the thermal cycle for the WLP
and SOT packages are shown in Figure 4 and Figure 5.
For example:
WLP:
At 1A I
, T
85°C. V
= 110mV. Therefore,
FWD
FWD
A =
P
DIS
= 110mW.
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
T
A
= 125°C
T
A
= 125°C
Figure 4. Thermal Protection (WLP)
Figure 5. Thermal Protection (SOT)
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Ordering Information
Chip Information
PROCESS: BiCMOS
PART
TEMP RANGE
PIN-PACKAGE
4 WLP
MAX40200ANS+
MAX40200AUK+*
-40°C to +125°C
-40°C to +125°C
5 SOT23
+Denotes a lead(Pb)-free/RoHS-compliant package.
Package Information
*Future product—contact factory for availability.
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
PACKAGE PACKAGE
LAND
PATTERN NO.
OUTLINE NO.
TYPE
CODE
Refer to
App Note 1891
4 WLP
N40C0+1
U5+1
21-100103
21-0057
5 SOT23
90-0174
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MAX40200
Ultra-Tiny Micropower, 1A Ideal Diode
with Ultra-Low Voltage Drop
Revision History
REVISION REVISION
PAGES
CHANGED
DESCRIPTION
NUMBER
DATE
0
12/16
Initial release
—
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
2016 Maxim Integrated Products, Inc.
│ 14
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