MDD1503RH [MGCHIP]
Single N-channel Trench MOSFET 30V, 87.5A, 4.7m(ohm);
| 型号： | MDD1503RH |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 30V, 87.5A, 4.7m(ohm) |
| 文件： | 总6页 (文件大小：1015K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD1503
Single N-channel Trench MOSFET 30V, 87.5A, 4.7mΩ
ㄹ
General Description
Features
The MDD1503 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1503 is suitable device for DC to DC
converter and general purpose applications.
VDS = 30V
ID = 87.5A @VGS = 10V
RDS(ON) (MAX)
< 4.7mΩ @VGS = 10V
< 6.8mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
VDSS
Rating
30
Unit
V
Gate-Source Voltage
VGSS
±20
V
TC=25oC
TC=70oC
TA=25oC
TA=70oC
87.5
70.0
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
ID
A
A
28.2(3)
22.73)
350
IDM
TC=25oC
TC=70oC
TA=25oC
TA=70oC
59.5
38.0
PD
W
6.2(3)
4.0(3)
146
Single Pulse Avalanche Energy (2)
EAS
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
RθJA
RθJC
20.0
2.1
oC/W
1
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
-55~150oC
Package
Packing
Quantity
Rohs Status
MDD1503RH
D-PAK
Tape & Reel
3000 units
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(th)
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
30
-
1.9
-
-
2.7
1
V
1.3
-
-
-
-
-
-
-
Drain Cut-Off Current
Gate Leakage Current
IDSS
IGSS
TJ=55oC
-
5
μA
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 22A
-
±0.1
4.7
6.8
6.8
-
4.1
5.9
5.7
27
Drain-Source ON Resistance
RDS(ON)
TJ=125oC
mΩ
VGS = 4.5V, ID = 18A
VDS = 5V, ID = 10A
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
gfs
S
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
21
28
13.3
5.9
35
Total Gate Charge
10
16.6
VDS = 15.0V, ID = 22A,
VGS = 10V
nC
pF
Gate-Source Charge
-
-
Gate-Drain Charge
-
4.2
-
Input Capacitance
1349
1799
177
354
12
2249
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
132
221
266
443
Turn-On Delay Time
-
-
-
-
-
-
Rise Time
12.7
30.6
9.2
-
-
VGS = 10V, VDS = 15.0V,
ID = 22A , RG = 3.0Ω
ns
Turn-Off Delay Time
td(off)
tf
Fall Time
-
Gate Resistance
Rg
f=1 MHz
1.2
2.0
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 22A, VGS = 0V
-
-
-
0.84
27.1
20.6
1.1
V
40.7
30.9
ns
nC
IF = 22A, dl/dt = 100A/μs
Qrr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 30.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.
2
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
40
30
20
10
0
12
9
VGS = 10V
3.5V
4.0V
4.5V
5.0V
8.0V
3.0V
VGS = 4.5V
VGS = 10V
6
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
50
40
30
20
10
0
1.8
※ Notes :
ID = 22.0A
※ Notes :
1. VGS = 10 V
2. ID = 22.0 A
1.6
1.4
1.2
1.0
0.8
0.6
TA = 25
℃
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
※ Notes :
VGS = 0V
※ Notes :
VDS = 5V
101
16
12
8
TA=25
℃
TA=25
℃
100
4
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1
2
3
4
5
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
2500
2000
1500
1000
500
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
※ Note : ID = 13A
VDS = 22V
Crss = Cgd
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
2
Crss
0
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
103
100
90
80
70
60
50
40
30
20
10
0
1 us
102
101
100
10-1
10 us
Operation in This Area
is Limited by R DS(on)
100 us
1 ms
10 ms
DC
Single Pulse
TJ=Max rated
TC=25
℃
10-1
100
101
102
25
50
75
100
125
150
TA, Case Temperature [ ]
℃
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
101
D=0.5
100
10-1
10-2
10-3
0.2
0.1
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
single pulse
JC
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
4
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
Package Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
5
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Oct. 2015. Version 1.3
MagnaChip Semiconductor Ltd.
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