MDP12N50TH [MGCHIP]
N-Channel MOSFET 500V, 11.5 A, 0.65(ohm);
| 型号： | MDP12N50TH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 11.5 A, 0.65(ohm) |
| 文件： | 总6页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ MDP12N50ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ11.5ꢀA,ꢀ0.65Ωꢀ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
Theꢀ MDP12N50ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ
Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀ500Vꢀ
IDꢀ=ꢀ11.5Aꢀ
RDS(ON)ꢀ≤ꢀ0.65ꢂꢀ
@ꢀVGSꢀ=ꢀ10Vꢀ
@ꢀVGSꢀ=ꢀ10Vꢀ
switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ
ꢀ
MDP12N50ꢀ isꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ
Applicationsꢀ
switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ
ꢀ
ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
PowerꢀSupplyꢀ
PFCꢀ
HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ
ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
G
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
VDSS
VGSS
Ratingꢀ
500ꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
ꢀ
±30ꢀ
Vꢀ
ꢀ TC=25oCꢀ
ꢀ TC=100oCꢀ
11.5ꢀ
7.0ꢀ
Aꢀ
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ(※)ꢀ
IDꢀ
IDM
PDꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
ꢀ
46ꢀ
Aꢀ
ꢀ TC=25oCꢀ
165ꢀ
Wꢀ
W/ oCꢀ
Derateꢀaboveꢀ25 oCꢀ
1.33ꢀ
4.5ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
ꢀ
Dv/dtꢀ
EAS
TJ,ꢀTstg
V/nsꢀ
mJꢀ
oC
ꢀ
ꢀ
460ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
ꢀ
ꢁ55~150ꢀ
※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
Symbolꢀ
RθJA
RθJC
Ratingꢀ
62.5ꢀ
Unitꢀ
ꢀ
ꢀ
oC/Wꢀ
ꢀ
ꢀ
0.75ꢀ
ꢀ ꢀ ꢀ ꢀ
1ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
Packageꢀ
Packingꢀ
RoHSꢀStatusꢀ
MDP12N50THꢀ
ꢁ55~150oCꢀ
TOꢁ220ꢀ
Tubeꢀ
HalogenꢀFreeꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=25oC)ꢀ
ꢀ
Characteristicsꢀ
StaticꢀCharacteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfsꢀ
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢃA,ꢀVGSꢀ=ꢀ0Vꢀ
500ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
5.0ꢀ
1ꢀ
Vꢀ
ꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢃAꢀ
ꢀ ꢀ VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ5.75Aꢀ
ꢀ ꢀ VDSꢀ=ꢀ30V,ꢀIDꢀ=ꢀ5.75Aꢀ
3.0ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
ꢃAꢀ
nAꢀ
ꢂꢀ
ꢀ
ꢁꢀ
ꢁꢀ
100ꢀ
0.65ꢀ
ꢁꢀ
ꢀ
ꢀ
0.55ꢀ
15ꢀ
ꢁꢀ
Sꢀ
Qgꢀ
Qgsꢀ
Qgdꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
22.7ꢀ
7.7ꢀ
8.7ꢀ
1030ꢀ
5ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ
VDSꢀ=ꢀ400V,ꢀIDꢀ=ꢀ11.5A,ꢀVGSꢀ=ꢀ10V(3)
ꢀ
nCꢀ
pFꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
Crss
Coss
td(on)
trꢀ
td(off)
tfꢀ
ꢀ
ꢀ ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ
ꢀ ꢀ RiseꢀTimeꢀ
ꢀ
ꢀ
ꢀ
121ꢀ
25ꢀ
ꢀ
ꢀ
ꢀ
50ꢀ
ꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ250V,ꢀIDꢀ=ꢀ11.5A,ꢀ
nsꢀ
RGꢀ=ꢀ25ꢂ(3)
ꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
ꢀ ꢀ FallꢀTimeꢀ
ꢀ
40ꢀ
ꢀ
30ꢀ
ꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
MaximumꢀContinuousꢀDrainꢀtoꢀ ꢀ
SourceꢀDiodeꢀForwardꢀCurrentꢀ
SourceꢁDrainꢀDiodeꢀForwardꢀ
ISꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
11.5ꢀ
ꢀ
ꢁꢀ
Aꢀ
Vꢀ
VSD
ꢀ
ꢀ ꢀ ISꢀ=ꢀ11.5A,ꢀVGSꢀ=ꢀ0Vꢀ
1.4ꢀ
Voltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ
Timeꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ
Chargeꢀ
trrꢀ
310ꢀ
2.6ꢀ
ꢀ
ꢀ
nsꢀ
ꢃCꢀ
ꢀ ꢀ IFꢀ=ꢀ11.5A,ꢀdl/dtꢀ=ꢀ100A/ꢃs(3)
ꢀ
Qrrꢀ
ꢀ
Noteꢀ:ꢀ
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRθJCꢀ&ꢀRθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ
3.ꢀISDꢀ ≤11.5A,ꢀdi/dt≤200A/us,ꢀV =50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀTJ=25°Cꢀ
DD
g
4.ꢀL=6.3mH,ꢀIAS=11.5A,ꢀVDD=50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀTJ=25°Cꢀ ꢀ
g
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1.0
0.9
0.8
0.7
0.6
0.5
0.4
ꢀV =5.5V
gs
ꢀꢀꢀꢀꢀꢀ=6.0V
10 ꢀꢀꢀꢀꢀꢀ=6.5V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
V
GS=20V
V
GS=10.0V
1
Notesꢀꢀ
ꢀ1.ꢀ250㎲ꢀPulseꢀTest
ꢀ2.ꢀT =25℃
C
0.1
0.1
1
10
0
5
10
15
20
V ,DrainꢁSourceꢀVoltageꢀ[V]
ID,DrainꢀCurrentꢀ[A]
DS
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
1.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ5ꢀA
1.1
1.0
0.9
0.8
VGS=10V
VGS=4.5V
ꢁ50
0
50
100
150
200
ꢁ50
ꢁ25
0
25
50
75
100
125
150
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
100
20
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVDS=5V
15
125℃
25℃
10
10
5
1
25℃
125℃
0.1
0.0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
VGSꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
ꢀ
ꢀ
3ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2000
1800
1600
1400
1200
1000
800
Cissꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
Coss
10
8
※ꢀNoteꢀ:ꢀIDꢀ=ꢀ11.5A
100V
250V
400V
Ciss
6
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
600
2
400
0
200
Crss
0
0.1
0
2
4
6
8
10
12
14
16
18
20
22
24
1
10
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
102
14
12
10
8
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
10ꢀµs
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
101
100
10ꢁ1
10ꢁ2
6
4
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
2
0
10ꢁ1
100
101
102
25
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
100
10ꢁ1
10ꢁ2
15000
12000
9000
6000
3000
0
singleꢀPulse
RthJCꢀ=ꢀ0.75℃/W
TCꢀ=ꢀ25℃
D=0.5
0.2
0.1
0.05
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
0.02
JC
JC
0.01
ꢀꢀꢀꢀꢀꢀRΘ =0.75℃/W
JC
singleꢀpulse
10ꢁ3
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
ꢀ
ꢀ
ꢀ
4ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
TO220,ꢀ3Lꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
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U.S.Aꢀ
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