MDP16N50G [MGCHIP]
N-Channel MOSFET 500V, 16.0 A, 0.35(ohm);
| 型号： | MDP16N50G |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 500V, 16.0 A, 0.35(ohm) |
| 文件： | 总8页 (文件大小：1326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP16N50G / MDF16N50G
N-Channel MOSFET 500V, 16.0 A, 0.35Ω
General Description
Features
VDS = 500V
VDS = 550V
ID = 16A
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
@ Tjmax
@VGS = 10V
RDS(ON) ≤ 0.35Ω @VGS = 10V
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Applications
Power Supply
HID
Lighting
G
TO-220
TO-220F
MDP Series
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
VDSS
MDP16N50G
MDF16N50G
Unit
V
Drain-Source Voltage
500
550
±30
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
VDSS @Tjmax
VGSS
V
V
TC=25oC
16
10.1
64
16*
10.1*
64*
A
Continuous Drain Current
Pulsed Drain Current(1)
ID
TC=100oC
A
IDM
A
TC=25oC
204.9
49.4
W
Power Dissipation
PD
W/ oC
Derate above 25
1.64
0.39
oC
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
EAR
dv/dt
EAS
20.5
4.5
mJ
V/ns
mJ
780
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
RθJA
MDP16N50G MDF16N50G
Unit
oC/W
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
62.5
0.61
62.5
2.53
RθJC
1
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Halogen Free
MDP16N50GTH
MDF16N50GTH
-55~150oC
TO-220F
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
ID = 250μA, VGS = 0V
500
-
-
V
-
-
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
VGS(th)
IDSS
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 8A
3.0
5.0
1
-
-
μA
nA
Ω
IGSS
-
100
0.35
-
RDS(ON)
gfs
0.30
14.8
VDS = 30V, ID = 8A
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
34.9
12.4
14.2
1724
8.3
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 16A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
226
46
88.5
96.5
41
VGS = 10V, VDS = 250V, ID = 16A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
-
-
-
-
16
-
A
V
VSD
IS = 16A, VGS = 0V
1.4
trr
325
ns
μC
IF = 16A, dl/dt = 100A/μs(3)
Qrr
3.34
Notes :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤16.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=5.48mH, IAS=16.0A, VDD=50V, R =25Ω, Starting TJ=25°C
g
2
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
35
30
25
20
15
10
5
Vgs=5.5V
=6.0V
Notes
0.7
0.6
0.5
0.4
0.3
1. 250㎲ Pulse Test
2. TC=25℃
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
VGS=10.0V
VGS=20V
0
0
10
20
10
15
20
25
30
35
40
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
※ Notes :
1. VGS = 10 V
2. ID = 8A
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
1. VGS = 0 V
* Notes ;
1. VDS=30V
2. 250㎲ Pulse Test
10
10
150oC
25oC
150℃
25℃
-55℃
1
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
4000
3500
3000
2500
2000
1500
1000
500
※ Note : ID = 16A
10
8
Coss
Crss = Cgd
100V
250V
400V
Ciss
6
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
4
2
Crss
0
0
1E11
1E12
1E13
0
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
101
100
10-1
10-2
10 s
100 s
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
16
14
12
10
8
DC
6
4
Single Pulse
TJ=Max rated
TC=25℃
2
0
25
10-1
100
101
102
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP16N50G (TO-220)
Fig.10 Maximum Drain Current vs. Case
Temperature
100
10-1
10-2
24000
21000
18000
15000
12000
9000
6000
3000
0
single Pulse
RthJC = 0.61℃/W
TC = 25℃
D=0.5
0.2
0.1
0.05
0.02
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
0.01
JC
RΘ =0.61℃/W
JC
single pulse
10-4 10-3
10-5
10-2
10-1
100
101
1E-5
1E-4
1E-3
0.01
0.1
1
t1, Rectangular Pulse Duration [sec]
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation MDP16N50G (TO-220)
Fig.11 Transient Thermal Response Curve
MDP16N50G (TO-220)
4
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
10 s
100 s
15000
12000
9000
6000
3000
0
single Pulse
RthJC = 2.53℃/W
TC = 25℃
1 ms
10 ms
100 ms
1 s
DC
Single Pulse
TJ=Max rated
TC=25℃
10-1
100
101
102
1E-5
1E-4
1E-3
0.01
0.1
1
VDS, Drain-Source Voltage [V]
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation MDF16N50G (TO-220F)
Fig.13 Maximum Safe Operating Area
MDF16N50G (TO-220F)
101
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
10-2
RΘ =2.53℃/W
JC
single pulse
10-4
10-5
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDF16N50G ( TO-220F)
5
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
6
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
16.13
10.71
e
2.54
F
G
L
L1
Q
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Q1
￠R
7
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
8
Dec. 2014. Version 1.1
MagnaChip Semiconductor Ltd.
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