APT45GP120JDF2 [MICROSEMI]
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES;
| 型号： | APT45GP120JDF2 |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES 栅 |
| 文件： | 总9页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT45GP120JDF2
1200V
E
®
E
POWER MOS 7 IGBT
C
G
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
highvoltageswitchingapplicationsandhasbeenoptimizedforhighfrequency
switchmode power supplies.
SOT-227
ISOTOP®
C
E
• Low Conduction Loss
• Low Gate Charge
• 50 kHz operation @ 800V, 16A
• 20 kHz operation @ 800V, 30A
• RBSOA rated
G
• Ultrafast Tail Current shutoff
MAXIMUMRATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
UNIT
Symbol
VCES
VGE
APT45GP120JDF2
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
±20
±30
Volts
VGEM
IC1
Gate-Emitter Voltage Transient
75
34
Continuous Collector Current @ TC = 25°C
Amps
IC2
Continuous Collector Current @ TC = 110°C
1
ICM
170
Pulsed Collector Current
@ TC = 150°C
RBSOA
PD
Reverse Bias Safe Operating Area @ TJ = 150°C
170A @ 960V
329
Watts
°C
Total Power Dissipation
TJ,TSTG
TL
-55 to 150
300
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
1200
3
TYP
MAX
UNIT
BVCES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 750µA)
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)
4.5
3.3
3.0
6
Volts
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
VCE(ON)
3.9
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
750
3000
±100
ICES
µA
nA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
IGES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1
APT45GP120JDF2
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN
TYP
3935
300
55
MAX
UNIT
Input Capacitance
Cies
Coes
Cres
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Output Capacitance
pF
V
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
VGEP
Qg
7.5
185
25
Gate Charge
3
VGE = 15V
Total Gate Charge
VCE = 600V
Qge
nC
Gate-Emitter Charge
IC = 45A
Qgc
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
80
RBSOA
TJ = 150°C, RG = 5Ω, VGE
=
170
A
15V, L = 100µH,VCE = 960V
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
td(on)
tr
td(off)
tf
18
29
Inductive Switching (25°C)
VCC = 600V
ns
VGE = 15V
IC = 45A
100
38
RG = 5Ω
4
Turn-on Switching Energy
Turn-on Switching Energy (Diode) 5
Eon1
Eon2
Eoff
td(on)
tr
900
1870
905
18
TJ = +25°C
µJ
ns
6
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Inductive Switching (125°C)
VCC = 600V
29
VGE = 15V
td(off)
tf
150
80
IC = 45A
RG = 5Ω
Current Fall Time
4 4
Turn-on Switching Energy
Eon1
Eon2
Eoff
900
3080
2255
TJ = +125°C
55
Turn-on Switching Energy (Diode)
µJ
66
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
.38
UNIT
°C/W
gm
RΘJC
RΘJC
WT
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
1.10
29.2
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
6
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
TYPICALPERFORMANCECURVES
APT45GP120JDF2
90
90
80
70
60
50
40
30
20
V
= 15V.
V
= 10V.
GE
GE
250µs PULSE TEST
<0.5 % DUTY CYCLE
250µs PULSE TEST
<0.5 % DUTY CYCLE
80
70
60
50
40
30
20
T =25°C
C
T =25°C
C
T =125°C
C
T =125°C
C
10
0
10
0
0
V
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
V ,COLLECTER-TO-EMITTERVOLTAGE(V)
CE
1
1.5
2
2.5
3
3.5
4
4.5
5
,COLLECTER-TO-EMITTERVOLTAGE(V)
CE
FIGURE 1, Output Characteristics(V = 15V)
FIGURE 2, Output Characteristics (V = 10V)
GE
GE
160
16
14
12
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
T
= 45A
= 25°C
C
J
140
120
100
80
V
=240V
CE
V
=600V
CE
T
= -55°C
J
10
8
T
= 25°C
J
V
=960V
CE
60
6
T
= 125°C
J
40
4
2
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0
20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
V
, GATE-TO-EMITTER VOLTAGE(V)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
5
4
3
2
1
0
5
4.5
4
I
= 90A
T = 25°C.
J
C
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 90A
C
I
= 45A
C
3.5
3
I
= 45A
C
I
= 22.5A
C
I
= 22.5A
C
2.5
2.0
1.5
1.0
V
= 15V.
GE
0.05
0
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
8
10
12
14
16
0
25
50
75
100
125
V
,GATE-TO-EMITTERVOLTAGE(V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE6,OnStateVoltagevsJunctionTemperature
1.2
120
1.15
1.10
1.05
1.0
100
80
60
0.95
0.9
40
20
0
0.85
0.8
-50 -25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE7,BreakdownVoltage vs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
APT45GP120JDF2
TYPICALPERFORMANCECURVES
35
180
160
140
120
100
80
VGE =15V,TJ=125°C
30
VGE =10V,TJ=125°C
VGE =15V,TJ=25°C
25
20
15
10
V
= 10V
GE
V
= 15V
GE
VGE =10V,TJ=25°C
60
V
= 600V
T = 25°C or 125°C
40
CE
V
= 600V
CE
G
J
R
5
0
R =5Ω
L = 100 µH
=5Ω
20
0
G
L = 100 µH
0
10 20 30 40 50 60 70 80 90
, COLLECTOR TO EMITTER CURRENT(A)
0
10 20 30 40 50 60 70 80 90
, COLLECTOR TO EMITTER CURRENT(A)
FIGURE10, Turn-OffDelayTimevsCollectorCurrent
I
I
CE
CE
FIGURE9, Turn-OnDelayTimevsCollectorCurrent
80
100
T = 25 or 125°C,VGE = 10V
J
T = 125°C, VGE = 10V or 15V
J
90
80
70
60
50
40
70
60
50
40
30
30
T = 25 or 125°C,VGE =15V
J
20
T = 25°C, VGE = 10V or 15V
J
20
10
10
R
G =5Ω, L = 100µH, VCE = 600V
R
G =5Ω, L = 100µH, VCE= 600V
0
0
10 20
30
40 50 60 70 80
, COLLECTOR TO EMITTER CURRENT(A)
90
10 20 30 40 50 60 70
80
90
I
I
CE
, COLLECTOR TO EMITTER CURRENT(A)
CE
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
8000
7000
6000
5000
4000
3000
2000
6000
5000
4000
3000
2000
V
=
600V
L = 100 µH
= 5 Ω
V
=
600V
L = 100 µH
= 5 Ω
CE
CE
TJ=125°C,V =15V
GE
R
R
G
G
T = 125°C, VGE = 10Vor 15V
TJ=125°C,V =10V
GE
J
TJ = 25°C, V =15V
GE
1000
0
1000
0
T = 25°C, VGE = 10Vor 15V
TJ= 25°C, V =10V
GE
J
10 20
30
40 50
60
70
80 90
0
I
20
,COLLECTORTOEMITTERCURRENT(A)
CE
30
40
50
60 70 80
90
I
,COLLECTORTOEMITTERCURRENT(A)
CE
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
12000
V
V
R
=
=
= 5 Ω
600V
+15V
V
V
=
600V
CE
GE
CE
GE
E
90A
on2
= +15V
7000
6000
5000
4000
3000
2000
1000
0
TJ = 125°C
G
10000
8000
6000
4000
E
90A
on2
E
90A
off
E
E
90A
off
45A
on2
E
45A
off
E
45A
on2
E
45A
20
off
E
22.5A
E
22.5A
on2
on2
2000
0
E
22.5A
E
22.5A
off
off
0
10
30
40
50
0
25
50
75
100
125
R ,GATE RESISTANCE(OHMS)
T ,JUNCTIONTEMPERATURE(°C)
G
J
FIGURE 15, Switching EnergyLosses vs. GateResistance
FIGURE16,SwitchingEnergyLosses vsJunctionTemperature
TYPICALPERFORMANCECURVES
APT45GP120JDF2
10,000
180
160
140
120
100
180
160
5,000
C
ies
1,000
500
C
oes
100
50
C
res
140
120
0
10
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800 900 1000
V ,COLLECTORTOEMITTERVOLTAGE
CE
V
,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0.40
0.9
0.35
0.30
0.7
0.25
0.5
0.20
Note:
0.15
0.10
0.05
0
0.3
t
1
t
2
t
1
0.1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
0.05
J
DM θJC
C
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
RC MODEL
90
Junction
temp. ( ”C)
0.0339
0.0806
0.265
0.000443F
0.0269F
0.608F
Power
(Watts)
10
T
T
=
125°C
75°C
J
Case temperature
=
C
D = 50 %
V
= 800V
CE
R
= 5 Ω
G
1
FIGURE19B, TRANSIENT THERMALIMPEDANCE MODEL
10
20
30
40
50
60
70
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
Fmax = min(fmax1,fmax 2
)
0.05
fmax1
=
td(on) + tr + td(off ) + tf
P
− P
diss
cond
fmax 2
=
Eon2 + Eoff
T − TC
RθJC
J
P
=
diss
APT45GP120JDF2
TYPICALPERFORMANCECURVES
APT30DF120
10%
TJ = 125
C
Gate Voltage
Collector Voltage
VCE
IC
VCC
td(on)
tr
90%
A
10%
5 %
D.U.T.
5%
Collector Current
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure22,Turn-onSwitchingWaveformsandDefinitions
90%
VTEST
Gate Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125
C
td(off)
tf
Collector Voltage
90%
A
VCE
IC
VCLAMP
100uH
A
B
0
10%
Switching
Energy
Collector Current
D.U.T.
DRIVER*
Figure23,Turn-offSwitchingWaveformsandDefinitions
Figure 24, E
ON1
Test Circuit
TYPICALPERFORMANCECURVES
APT45GP120JDF2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUMRATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT45GP120JDF2
Symbol
IF(AV)
UNIT
Maximum Average Forward Current (TC = 77°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
24
30
IF(RMS)
Amps
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
210
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IF = 45A
3.67
4.64
2.56
VF
Forward Voltage
IF = 90A
Volts
IF = 45A, TJ = 125°C
DYNAMICCHARACTERISTICS
Characteristic
Symbol
TestConditions
MIN
TYP
MAX
UNIT
trr
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
-
37
ns
Reverse Recovery Time
-
300
IF = 30A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Qrr
IRRM
trr
Reverse Recovery Charge
nC
Amps
ns
-
-
-
-
-
-
-
-
370
4
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
430
2025
9
IF = 30A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
Amps
ns
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
170
2970
31
IF = 30A, diF/dt = -1000A/µs
VR = 800V, TC = 125°C
Qrr
Reverse Recovery Charge
nC
IRRM
Maximum Reverse Recovery Current
Amps
1.20
0.9
0.7
0.5
0.3
1.00
0.80
0.60
0.40
Note:
t
1
t
2
0.20
0
t
1
Duty Factor D =
Peak T = P x Z
/
t
0.1
SINGLEPULSE
2
+ T
J
DM θJC
C
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE25a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
RC MODEL
Junction
temp(°C)
0.291 °C/W
0.468 °C/W
0.341 °C/W
0.00307 J/°C
0.0463 J/°C
0.267 J/°C
Power
(watts)
Case temperature(°C)
FIGURE25b,TRANSIENT THERMAL IMPEDANCE MODEL
APT45GP120JDF2
= 125°C
= 800V
R
200
180
160
140
120
100
80
500
400
300
200
100
0
T
V
J
60A
30A
T = 150°C
J
15A
T = 125°C
T = 25°C
J
J
60
40
T = -55°C
J
20
0
0
1
2
3
4
5
6
7
0
200
400
600
800
1000 1200
V ,ANODE-TO-CATHODEVOLTAGE(V)
-di /dt, CURRENT RATE OF CHANGE(A/µs)
F
F
Figure 26. Forward Current vs. Forward Voltage
Figure 27. Reverse Recovery Time vs. Current Rate of Change
5000
4000
3000
2000
35
T
= 125°C
= 800V
T
V
= 125°C
= 800V
J
J
V
60A
R
R
30
25
20
15
10
5
60A
30A
30A
15A
15A
1000
0
0
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
-di /dt, CURRENT RATE OF CHANGE (A/µs)
-di /dt,CURRENTRATEOFCHANGE(A/µs)
F
F
Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure29. ReverseRecoveryCurrentvs. CurrentRateofChange
1.4
35
Duty cycle
= 0.5
T
= 150°C
J
Q
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
25
20
15
10
rr
t
rr
I
RRM
t
rr
Q
rr
5
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
Figure 31. Maximum Average Forward Current vs. CaseTemperature
100
125
150
T ,JUNCTIONTEMPERATURE(°C)
J
Figure 30. Dynamic Parameters vs. Junction Temperature
200
150
100
50
0
1
10
V , REVERSEVOLTAGE(V)
100 200
R
Figure 32. Junction Capacitance vs. Reverse Voltage
TYPICALPERFORMANCECURVES
APT45GP120JDF2
V
r
diF/dt Adjust
+18V
0V
APT10035LLL
D.U.T.
t
Q
/
30µH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 33. Diode Test Circuit
1
2
IF - Forward Conduction Current
diF/dt - Rate of Diode Current Change Through Zero Crossing.
1
4
5
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse ecovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
R
3
rr
2
line through IRRM and 0.25 IRRM passes through zero.
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227(ISOTOP®)PackageOutline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
Hex Nut M4
(4 places)
25.2 (0.992)
25.4 (1.000)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030) 12.6 (.496)
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Emitter/Anode
Collector/Cathode
30.1 (1.185)
30.3 (1.193)
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
Gate
Dimensions in Millimeters and (Inches)
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MICROSEMI
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