APT50GS60SRDQ2 [MICROSEMI]
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode; 迅雷高速NPT IGBT与反并联二极管DQ
| 型号： | APT50GS60SRDQ2 |
| 厂家： | 
Microsemi |
| 描述： | Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| 文件： | 总7页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
600V, 50A, V
= 2.8V Typical
CE(ON)
Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient
make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
D3PAK
APT50GS60BRDQ2(G)
Features
Typical Applications
APT50GS60SRDQ2(G)
• Fast Switching with low EMI
• Very Low EOFF for Maximum Efficiency
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
Single die
IGBT with
separate DQ
diode die
• Short circuit rated
• Low Gate Charge
• High Power PFC Boost
• Welding
• Tight parameter distribution
• Easy paralleling
• Induction heating
• High Frequency SMPS
• RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
Rating
93
Unit
A
Continuous Collector Current T = @ 25°C
IC1
IC1
C
Continuous Collector Current T = @ 100°C
C
50
195
±30V
195
280
1
ICM
VGE
Pulsed Collector Current
Gate-Emitter Voltage
V
SSOA
EAS
Switching Safe Operating Area
2
Single Pulse Avalanche Energy
mJ
µs
3
tSC
Short Circut Withstand Time
10
90
55
T
T
= 25°C
C
C
IF
Diode Continuous Forward Current
= 100°C
A
IFRM
Diode Max. Repetitive Forward Current
195
Thermal and Mechanical Characteristics
Symbol Parameter
Min
Typ
Max
415
0.30
0.67
-
Unit
PD
Total Power Dissipation T = @ 25°C
C
-
-
-
-
W
IGBT
RθJC
Junction to Case Thermal Resistance
Diode
°C/W
RθCS
TJ, TSTG
TL
Case to Sink Thermal Resistance, Flat Greased Surface
Operating and Storage Junction Temperature Range
-
0.11
-55
-
150
300
-
°C
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
-
-
-
-
-
-
0.22
5.9
-
oz
g
WT
-
10
in·lbf
N·m
Torque Mounting Torque (TO-247), 6-32 M3 Screw
-
1.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Static Characteristics
T = 25°C unless otherwise specified
J
APT50GS60B_SRDQ2(G)
Symbol
VBR(CES)
Parameter
Test Conditions
VGE = 0V, IC = 250µA
Min
Typ
-
Max
Unit
V
Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
600
-
∆VBR(CES)/∆TJ
Reference to 25°C, I = 250µA
C
-
-
0.60
2.8
3.25
2.15
1.8
4
-
V/°C
TJ = 25°C
VGE = 15V
IC = 50A
3.15
Collector-Emitter On Voltage 4
Diode Forward Voltage 4
VCE(ON)
TJ = 125°C
TJ = 25°C
TJ = 125°C
-
-
-
-
-
V
VEC
IC = 50A
-
VGE(th)
Gate-Emitter Threshold Voltage
Threshold Voltage Temp Coeff
3
-
5
VGE = VCE, IC = 1mA
∆VGE(th)/∆TJ
6.7
-
-
mV/°C
µA
TJ = 25°C
TJ = 125°C
VCE = 600V,
VGE = 0V
-
50
TBD
±100
ICES
IGES
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
-
-
VGE = ±20V
-
-
nA
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Parameter
Test Conditions
VCE = 50V, IC = 50A
Min
Typ
31
Max
Unit
gfs
Forward Transconductance
Input Capacitance
-
-
-
-
-
-
-
-
S
Cies
Coes
Cres
2635
240
145
VGE = 0V, VCE = 25V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Charge Related
Co(cr)
Co(er)
-
115
85
-
5
VGE = 0V
VCE = 0 to 400V
Reverse Transfer Capacitance
6
Current Related
Qg
Qge
Ggc
td(on)
tr
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
235
18
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0 to 15V
IC = 50A, VCE = 300V
nC
ns
100
16
33
Inductive Switching IGBT and
Diode:
t
Turn-Off Delay Time
Fall Time
225
37
d(off)
tf
TJ = 25°C, VCC = 400V,
IC = 50A
8
Eon1
Eon2
Eoff
td(on)
tr
Turn-On Switching Energy
TBD
1.2
0.755
33
7
9
RG = 4.7Ω , VGG = 15V
Turn-On Switching Energy
mJ
ns
Turn-Off Switching Energy 10
Turn-On Delay Time
Rise Time
Inductive Switching IGBT and
Diode:
33
td(off)
tf
Turn-Off Delay Time
Fall Time
250
23
TJ = 125°C, VCC = 400V,
IC = 50A
8
Eon1
Eon2
Eoff
trr
Turn-On Switching Energy
TBD
1.7
0.950
25
7
RG = 4.7Ω , VGG = 15V
9
Turn-On Switching Energy
mJ
Turn-Off Switching Energy 10
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
ns
nC
A
IF = 50A
VR = 400V
diF/dt = 200A/µs
Qrr
35
Irrm
3
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)
250
225
200
175
150
125
100
75
150
VGE = 15V
T
= 125°C
J
V
GE = 13 & 15V
11V
125
100
75
10V
9V
TJ = 25°C
8V
50
T
J = 125°C
7V
6V
50
25
TJ = 150°C
25
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE(ON)
CE
FIGURE 1, Output Characteristics
FIGURE 2, Output Characteristics
150
125
100
75
6
5
4
250µs PULSE
TEST<0.5 % DUTY
CYCLE
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 100A
C
I
= 50A
C
3
2
1
0
I
= 25A
C
50
TJ = 25°C
TJ = 125°C
25
0
0
2
4
6
8
10
12
6
8
10
12
14
16
V
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
5
4
3
2
1
0
16
V
GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 100A
14
I
T
= 25A
= 25°C
C
C
V
= 120V
J
CE
12
10
V
= 300V
CE
I
= 50A
C
8
6
4
2
0
V
= 480V
CE
I
= 25A
C
0
25
50
75
100
125
150
0
50
100
150
200
250
T , Junction Temperature (°C)
GATE CHARGE (nC)
J
FIGURE 5, On State Voltage vs Junction Temperature
FIGURE 6, Gate Charge
5000
100
90
80
70
60
50
40
30
20
Cies
1000
100
Coes
Cres
10
0
10
0
100
200
300
400
500
600
25
50
75
100
125
150
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
T , CASE TEMPERATURE (°C)
CE
C
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
FIGURE 8, DC Collector Current vs Case Temperature
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)
300
250
200
150
100
50
20
18
16
V
= 15V
GE
VGE =15V,TJ=125°C
14
12
10
8
VGE =15V,TJ=25°C
6
VCE = 400V
4
VCE = 400V
RG = 4.7Ω
L = 100µH
TJ = 25°C, TJ =125°C
RG = 4.7Ω
2
L = 100µH
0
I
0
I
0
20
40
60
80
100
120
0
20
40
60
80
100
120
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
100
RG = 4.7Ω, L = 100µH, VCE = 400V
RG = 4.7Ω, L = 100µH, VCE = 400V
70
60
50
40
80
TJ = 25 or 125°C,VGE = 15V
60
40
20
T
J = 125°C, VGE = 15V
30
20
10
TJ = 25°C, VGE = 15V
0
I
0
I
0
CE
20
40
60
80
100
120
0
CE
20
40
60
80
100
120
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
4000
3000
2000
2500
2000
1500
1000
V
V
R
=
=
400V
+15V
V
V
R
=
=
400V
+15V
CE
GE
CE
GE
= 4.7Ω
= 4.7Ω
G
G
T
J = 125°C, VGE = 15V
T
J = 125°C,VGE =15V
500
0
1000
0
T
J = 25°C, VGE = 15V
T
J = 25°C,VGE =15V
60 80
0
CE
20
40
100
120
0
CE
20
40
60
80
100
120
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
6
10
V
V
T
=
=
400V
+15V
V
V
R
=
=
400V
+15V
CE
GE
CE
GE
E
100A
= 125°C
= 4.7Ω
J
on2,
G
5
4
3
2
1
0
8
6
4
2
0
Eon2,100A
E
100A
off,
Eoff,100A
E
50A
25A
on2,
Eon2,50A
E
50A
Eoff,50A
off,
E
25A
off,
Eon2,25A
Eoff,25A
E
on2,
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GS60B_SRDQ2(G)
200
100
200
100
I
I
CM
CM
V
CE(on)
V
10
1
10
1
CE(on)
13µs
100µs
13µs
100µs
1ms
10ms
100ms
DC line
1ms
10ms
100ms
DC line
T = 150°C
C = 25°C
J
T
Scaling for Different Case & Junction
Temperatures:
T = 125°C
J
I
C = IC(T = 25°C)*(T - TC)/125
T
C = 75°C
J
C
0.1
0.1
1
V
10
100
800
1
V
10
100
800
, COLLECTOR-TO-EMITTER VOLTAGE (V)
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
CE
Figure 17, Forward Safe Operating Area
Figure 18, Maximum Forward Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
SINGLE PULSE
10-3
0.1
+ T
C
J
DM
θJC
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
160
140
120
75°C
100
80
60
40
20
0
Fmax = min (fmax, fmax2
)
TJ (°C)
TC (°C)
0.05
fmax1
=
=
td(on) + tr + td(off) + tf
0.0731
0.226
Dissipated Power
(Watts)
Pdiss - Pcond
Eon2 + Eoff
100°C
fmax2
Pdiss
T
T
=
125°C
75°C
0.00606
0.260
J
=
C
D = 50 %
V
R
TJ - TC
RθJC
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
=
400V
CE
=
= 4.7Ω
G
0
10 20 30 40 50 60 70 80 90
I , COLLECTOR CURRENT (A)
C
Figure 21, Operating Frequency vs Collector Current
Figure 20, Transient Thermal Impedance Model
APT50GS60B_SRDQ2(G)
10%
td(on)
Gate Voltage
T
= 125°C
APT40DQ60
J
tr
Collector Current
Collector Voltage
VCE
IC
VCC
90%
10%
5%
5%
Switching Energy
A
D.U.T.
Figure 23, Turn-on Switching Waveforms and Definitions
Figure 22, Inductive Switching Test Circuit
Gate Voltage
90%
T
= 125°C
J
td(off)
90%
Collector Voltage
tf
10%
Collector Current
0
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE:
1
2
3
4
5
6
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 224µH, RG = 25Ω, IC = 50A
Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
Pulse test: Pulse width < 380µs, duty cycle < 2%
Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES
Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
.
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7
8
RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
9
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT50GS60B_SRDQ2(G)
3
TO-247 Package Outline
D Pak Package Outline
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Collector)
and Leads (Cathode)
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
Emitter (Anode)
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关型号：
APT50GS60SRDQ2(G)
Insulated Gate Bipolar Transistor, 93A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3
MICROSEMI
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