APT50GT120B2RDLG [MICROSEMI]
Resonant Mode IGBT; 谐振模式的IGBT
| 型号： | APT50GT120B2RDLG |
| 厂家： | 
Microsemi |
| 描述： | Resonant Mode IGBT |
| 文件： | 总9页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1200V
APT50GT120B2RDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode IGBT®
The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® of-
fers superior ruggedness and ultrafast switching speed.
Typical Applications
Induction Heating
Welding
Features
•
•
SSOA Rated
•
•
•
•
•
Low Conduction Loss
RoHS Compliant
Low Gate Charge
C
E
Medical
Ultrafast Tail Current shutoff
Low forward Diode Voltage (VF)
Ultrasoft Recovery Diode
G
High Power Telecom
Resonant Mode Phase Shifted
Bridge
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Parameter
Symbol
UNIT
APT50GT120B2RDL(G)
VCES
VGE
IC1
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
Volts
±30
8
Continuous Collector Current @ TC = 25°C
106
IC2
Continuous Collector Current @ TC = 110°C
50
Amps
1
ICM
Pulsed Collector Current
@ TC = 150°C
150
Switching Safe Operating Area @ TJ = 150°C
150A @ 1200V
694
SSOA
PD
Watts
°C
Total Power Dissipation
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
300
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
Units
V(BR)CES
VGE(TH)
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
1200
4.5
5.5
3.2
4.0
6.5
3.7
Volts
2.7
VCE(ON)
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
300
ICES
μA
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1500
300
IGES
nA
RG(int)
Ω
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT50GT120B2RDL(G)
UNIT
Test Conditions
Capacitance
MIN
TYP
MAX
Cies
Coes
Cres
VGEP
Qg
Input Capacitance
2500
250
155
7.5
pF
V
Output Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Gate Charge
3
V
GE = 15V
Total Gate Charge
240
20
VCE = 600V
IC = 50A
Qge
Qgc
nC
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
110
TJ = 150°C, RG = 1.0Ω 7, VGE
=
Switching Safe Operating Area
SSOA
td(on)
A
150
15V, L = 100μH, VCE = 1200V
Inductive Switching (25°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
23
50
VCC = 800V
VGE = 15V
IC = 50A
tr
ns
td(off)
215
26
tf
RG = 4.7Ω 7
4
Eon1
Eon2
Turn-on Switching Energy
3585
4835
1910
23
TJ = +25°C
5
μJ
Turn-on Switching Energy (Diode)
6
Eoff
Turn-off Switching Energy
td(on)
Inductive Switching (125°C)
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
tr
V
CC = 800V
50
ns
VGE = 15V
td(off)
tf
255
50
IC = 50A
RG = 4.7Ω 7
TJ = +125°C
Current Fall Time
4 4
Eon1
Eon2
Eoff
3580
6970
2750
Turn-on Switching Energy
55
μJ
Turn-on Switching Energy (Diode)
6
Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
UNIT
MIN
TYP
MAX
.18
R
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
θJC
°C/W
gm
R
.61
θJC
WT
5.9
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
For Combi devices, Ices includes both IGBT and FRED leakages
See MIL-STD-750 Method 3471.
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
RG is external gate resistance, not including RG(int) nor gate driver impedance.
8
Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
150
150
125
15V
V
= 15V
GE
13V
TJ= 25°C
TJ= 55°C
125
100
75
50
25
0
11V
10V
100
75
50
25
0
TJ= 125°C
9V
8V
TJ= 150°C
7V
6V
0
1
2
3
4
5
6
7
8
0
V
10
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
15
20
25
30
5
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 1, Output Characteristics (T = 25°C)
FIGURE 2, Output Characteristics (T = 25°C)
J
J
150
125
100
16
14
12
10
250μs PULSE
TEST<0.5 % DUTY
CYCLE
I
= 50A
V
V
= 240V
= 600V
C
CE
T
= 25°C
J
CE
V
= 960V
CE
75
50
25
0
8
6
4
2
0
TJ= -55°C
TJ= 25°C
TJ= 125°C
0
2
4
6
10
12
14
0
50
100 150 200 250 300 350
GATE CHARGE (nC)
8
V
, GATE-TO-EMITTER VOLTAGE (V)
CE
FIGURE 4, Gate charge
FIGURE 3, Transfer Characteristics
6
5
4
3
2
1
0
7
TJ = 25°C.
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
250μs PULSE TEST
<0.5 % DUTY CYCLE
6
5
4
3
2
1
0
I
= 100A
C
I
= 100A
C
I
= 50A
C
I
= 50A
= 25A
C
I
= 25A
C
I
C
25
50
75
100
125
150
8
9
V
10 11 12 13 14 15 16
, GATE-TO-EMITTER VOLTAGE (V)
T , Junction Temperature (°C)
GE
J
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
1.10
100
1.05
1.00
0.95
0.90
0.85
0.80
0.75
80
60
40
20
0
-.50 -.25
0
25
50 75 100 125 150
25
50
75
100
125
150
T , JUNCTION TEMPERATURE
T , Case Temperature (°C)
J
C
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
APT50GT120B2RDL(G)
300
250
200
150
100
50
35
30
25
20
15
10
5
V
= 15V
GE
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
TJ = 25°C, or 125°C
G = 5Ω
L = 100μH
VCE = 800V
RG = 5Ω
L = 100μH
R
0
I
0
I
10
30
50
70
90
110
10
30
, COLLECTOR TO EMITTER CURRENT (A)
CE
50
70
90
110
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
60
RG = 5Ω, L = 100μH, VCE = 800V
RG = 5Ω, L = 100μH, VCE = 800V
140
120
100
80
50
40
30
20
10
T
J = 125°C, VGE = 15V
60
T
J = 25°C, VGE = 15V
40
TJ = 25 or 125°C,VGE = 15V
20
0
I
0
I
10
CE
30
50
70
90
110
10
CE
30
50
70
90
110
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
4000
3000
2000
25,000
20,000
15,000
10,000
5,000
0
V
V
=
=
800V
+15V
V
V
=
=
800V
+15V
CE
GE
CE
GE
R
= 5Ω
R
= 5Ω
G
G
T
J = 125°C
T
J = 125°C
T
J = 25°C
1000
0
T
J = 25°C
10
30
50
70
90
110
10
30
50
70
90
110
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
25,000
60,000
50,000
40,000
30,000
20,000
V
V
T
=
=
800V
+15V
V
V
=
=
800V
+15V
CE
GE
CE
GE
E
100A
E
100A
on2,
on2,
= 125°C
R
= 5Ω
J
G
20,000
15,000
10,000
5,000
0
E
50A
on2,
E
50A
E
100A
25A
on2,
E
100A
off,
off,
10,000
0
E
25A
25A
E
50A
off,
on2,
E
50A
off,
E
25A
on2,
E
E
off,
off,
0
10
20
30
40
50
0
25
50
75
100
125
R , GATE RESISTANCE (OHMS)
T , JUNCTION TEMPERATURE (°C)
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
160
140
120
100
80
4,000
Cies
1,000
500
60
40
Coes
Cres
20
100
0
0
10
20
30
40
50
0
200 400 600 800 1000 1200 1400
V , COLLECTOR TO EMITTER VOLTAGE
CE
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0.20
D = 0.9
0.16
0.7
0.12
0.5
Note:
0.08
t
1
0.3
t
2
0.04
t
1
t
/
2
SINGLE PULSE
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
0.05
0
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-2
10-1
1.0
140
50
Fmax = min (fmax, fmax2
)
0.05
fmax1
=
t d(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + E off
fmax2
Pdiss
=
10
4
T
J
=
125°C
T
= 75°C
C
D = 50 %
TJ - T C
R θJC
V
=
800V
=
CE
R
= 5Ω
G
10 20 30 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
APT50GT120B2RDL(G)
Gate Voltage
10%
APT30DL120
T
= 125°C
J
td(on)
tr
VCE
IC
Collector Current
VCC
90%
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
T
= 125°C
J
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol
IF(AV)
Characteristic / Test Conditions
APT50GT120B2RDL(G)
UNIT
Maximum Average Forward Current (TC = 145°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
30
81
60
IF(RMS)
Amps
IFSM
STATIC ELECTRICAL CHARACTERISTICS
Symbol
UNIT
Characteristic / Test Conditions
MIN
TYP
MAX
IF = 30A
1.6
2.0
1.6
2.1
Volts
Forward Voltage
IF = 60A
VF
IF = 30A, TJ = 125°C
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MIN
TYP
61
MAX
UNIT
Test Conditions
Reverse Recovery Time
trr
trr
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
ns
Reverse Recovery Time
-
592
IF = 30A, diF/dt = -200A/μs
Qrr
IRRM
trr
Reverse Recovery Charge
-
-
-
-
-
2694
9
nC
Amps
ns
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
389
3459
15
IF =30A, diF/dt = -200A/μs
Qrr
Reverse Recovery Charge
nC
Amps
ns
VR = 800V, TC = 125°C
IRRM
trr
Maximum Reverse Recovery Current
Reverse Recovery Time
-
-
-
165
4646
44
IF = 30A, diF/dt = -1000A/μs
Qrr
Reverse Recovery Charge
nC
VR = 800V, TC = 125°C
IRRM
Maximum Reverse Recovery Current
Amps
0.9
0.8
0.9
0.7
0.7
0.5
0.3
0.6
0.5
0.4
0.3
0.2
0.1
Note:
t
1
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
+ T
C
J
DM
θJC
SINGLE PULSE
10-3
0.05
0
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT50GT120B2RDL(G)
100
80
60
40
20
0
500
450
400
350
300
250
200
150
100
50
T
= 125°C
= 800V
TJ= 125°C
J
V
R
TJ= 150°C
60A
30A
TJ= 55°C
TJ= 25°C
15A
0
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
FIGURE 2, Forward Current vs. Forward Voltage
70
7000
6000
5000
4000
3000
2000
1000
T
= 125°C
= 800V
T
= 125°C
= 800V
J
J
V
V
R
R
60
50
40
30
20
10
0
60A
30A
60A
30A
15A
15A
0
0
200
400
60
800
1000
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
100
90
80
70
60
50
40
30
20
1.0
0.8
tRR
IRRM
0.6
QRR
0.4
0.2
0
Duty cycle = 0.5
TJ = 45°C
10
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 6, Dynamic Parameters vs Junction Temperature
1400
1200
1000
800
600
400
200
0
1
10
100
800
V , REVERSE VOLTAGE (V)
R
FIGURE 8, Junction Capacitance vs. Reverse Voltage
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
V
r
diF/dt Adjust
+18V
0V
APT10078BLL
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
2
IF - Forward Conduction Current
diF/dt - Rate of Diode Current Change Through Zero Crossing.
1
4
5
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
3
rr
2
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 33, Diode Reverse Recovery Waveform and Definitions
T-MAX® (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
Gate
Collector
(Cathode)
Emmiter
1.01 (.040)
1.40 (.055)
(Anode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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