APTGF250A60D3G [MICROSEMI]
Phase leg NPT IGBT Power Module; 相脚NPT IGBT功率模块
| 型号： | APTGF250A60D3G |
| 厂家： | 
Microsemi |
| 描述： | Phase leg NPT IGBT Power Module |
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF250A60D3G
VCES = 600V
IC = 250A @ Tc = 80°C
Phase leg
NPT IGBT Power Module
Application
•
•
•
•
Welding converters
3
Q1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
5
Features
1
Q2
•
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
6
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
7
2
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
•
•
•
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
400
250
600
±20
1250
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
600A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1 - 5
www.microsemi.com
APTGF250A60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
1.95 2.45
2.2
µA
Tj = 25°C
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 300A
Tj = 125°C
VGE = VCE , IC = 6 mA
VGE = 20V, VCE = 0V
5.0
5.8
6.5
V
nA
IGES
Gate – Emitter Leakage Current
400
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
13
nF
1.2
VGE=15V, IC=300A
VCE=300V
QG
Gate charge
720
nC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
150
72
V
GE = ±15V
ns
VBus = 300V
IC = 300A
RG = 6Ω
Inductive Switching (125°C)
VGE = ±15V
Td(off) Turn-off Delay Time
530
Tf
Td(on)
Tr
Fall Time
40
160
75
Turn-on Delay Time
Rise Time
ns
V
Bus = 300V
Td(off) Turn-off Delay Time
550
50
IC = 300A
RG = 6Ω
Tf
Fall Time
V
GE = ±15V
Eon
Turn on Energy
Tj = 125°C
Tj = 125°C
14
13
VBus = 300V
IC = 300A
RG = 6Ω
mJ
A
Eoff
Isc
Turn off Energy
Short Circuit data
V
GE ≤15V ; VBus = 360V
1350
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRRM
IF
600
V
µA
A
Tj = 25°C
750
1000
VR=600V
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
300
1.25
1.2
150
250
20
IF = 300A
VGE = 0V
1.6
VF
Diode Forward Voltage
V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 300A
VR = 300V
di/dt =4800A/µs
Qrr
Err
32
4
Tj = 125°C
7.6
2 - 5
www.microsemi.com
APTGF250A60D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.1
0.21
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
150
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
3 - 5
www.microsemi.com
APTGF250A60D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
600
600
500
400
300
200
100
0
TJ = 125°C
VGE=15V
TJ=25°C
500
400
300
200
100
0
VGE=20V
VGE=12V
TJ=125°C
VGE=9V
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
600
500
400
300
200
100
0
30
25
20
15
10
5
VCE = 300V
VGE = 15V
RG = 6 Ω
Eon
TJ = 125°C
Eoff
Err
TJ=125°C
TJ=25°C
0
0
150
300
450
600
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Safe Operating Area
40
700
600
500
400
300
200
100
0
Eon
VCE = 300V
VGE =15V
IC = 300A
30
20
10
0
TJ = 125°C
Eoff
VGE=15V
TJ=125°C
Err
RG=6 Ω
0
100 200 300 400 500 600
CE (V)
0
5
10
15
20
25
30
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.12
0.1
IGBT
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
www.microsemi.com
APTGF250A60D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
70
60
50
40
30
20
10
0
600
VCE=300V
D=50%
RG=6Ω
500
400
300
200
100
0
ZVS
TJ=125°C
TC=75°C
ZCS
TJ=125°C
hard
switching
TJ=25°C
1.2
0
0.3
0.6
0.9
1.5
0
100
200
IC (A)
300
400
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.22
0.18
0.14
0.1
0.9
0.7
Diode
0.5
0.3
0.06
0.02
-0.02
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
www.microsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明