APTGF25DSK120T3G [MICROSEMI]
Dual Buck chopper NPT IGBT Power Module; 双降压斩波NPT IGBT功率模块
| 型号： | APTGF25DSK120T3G |
| 厂家： | 
Microsemi |
| 描述： | Dual Buck chopper NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF25DSK120T3G
VCES = 1200V
IC = 25A @ Tc = 80°C
NPT IGBT Power Module
Application
13 14
•
AC and DC motor control
•
Switched Mode Power Supplies
Q1
Q2
18
19
11
10
Features
•
Non Punch Through (NPT) Fast IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
22
23
7
8
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
CR1
CR2
32
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
-
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
29
15
30
31
R1
16
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
Benefits
•
Outstanding performance at high frequency
operation
29
30
16
15
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
31
32
14
13
•
•
•
Low profile
2
3
4
7
8
10 11
12
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
RoHS compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
40
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
25
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
100
±20
208
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 6
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APTGF25DSK120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
VGE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
500
2.5
4
3.2
4.0
3.7
VGE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 25A
VGE = VCE , IC = 1mA
6
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
1650
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
250
110
160
10
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =25A
Qge
Qgc
nC
70
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
60
50
305
30
60
50
346
ns
VBus = 400V
IC = 25A
RG = 22Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 400V
IC = 25A
Tf
Fall Time
40
RG = 22Ω
VGE = 15V
Tj = 125°C
VBus = 400V
Eon
Turn-on Switching Energy
3.5
1.5
mJ
IC = 25A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 22Ω
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
Tj = 125°C
250
500
IRM
Maximum Reverse Leakage Current
VR=1200V
µA
IF
Forward Current
Tc = 70°C
60
2
A
V
IF = 60A
2.5
VF
Diode Forward Voltage
IF = 120A
2.3
1.8
400
470
1.2
4
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 60A
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 60A
VR = 800V
di/dt =200A/µs
Qrr
µC
2 - 6
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APTGF25DSK120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
RthJC
Junction to Case Thermal Resistance
°C/W
0.9
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 - 6
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APTGF25DSK120T3G
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
80
70
60
50
40
30
20
10
0
20
250µs Pulse Test
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
< 0.5% Duty cycle
TJ=25°C
16
12
8
TJ=125°C
TJ=125°C
4
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
120
100
80
60
40
20
0
18
IC = 25A
J = 25°C
VCE =240V
VCE=600V
250µs Pulse Test
< 0.5% Duty cycle
16
14
12
10
8
6
4
2
0
T
VCE =960V
TJ=125°C
TJ=25°C
0
30
60
90
120
150
180
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 125°C
250µs Pulse Test
250µs Pulse Test
Ic=50A
< 0.5% Duty cycle
< 0.5% Duty cycle
VGE = 15V
Ic=50A
Ic=25A
Ic=25A
Ic=12.5A
Ic=12.5A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
60
50
40
30
20
10
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
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APTGF25DSK120T3G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
75
70
65
60
55
50
400
VCE = 600V
VGE=15V,
TJ=125°C
RG = 22Ω
350
300
250
200
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
R
G = 22Ω
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
160
120
80
40
0
50
45
40
35
30
25
20
VCE = 600V
RG = 22Ω
TJ = 125°C
TJ = 25°C
VGE=15V
VCE = 600V, VGE = 15V, RG = 22Ω
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
8
4
3
2
1
0
VCE = 600V
TJ=125°C,
VCE = 600V
TJ = 125°C
R
G = 22Ω
V
R
GE = 15V
G = 22Ω
V
GE=15V
6
TJ=25°C,
GE =15V
TJ = 25°C
4
V
2
0
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
5
4
3
2
1
0
60
50
40
30
20
10
0
VCE = 600V
V
GE = 15V
Eon, 25A
Eoff, 25A
TJ= 125°C
0
10
20
30
40
50
60
0
400
800
1200
Gate Resistance (Ohms)
VCE, Collector to Emitter Voltage (V)
5 - 6
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APTGF25DSK120T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
10000
1000
100
120
VCE = 600V
D = 50%
100
Cies
R
G = 22Ω
T
J = 125°C
80
60
40
20
0
TC= 75°C
ZVS
Coes
Cres
Hard
switching
ZCS
10
0
10
20
30
40
50
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
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