APTGF25H120T3 [ADPOW]
Full - Bridge NPT IGBT Power Module; 全 - 桥NPT IGBT功率模块
| 型号： | APTGF25H120T3 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Full - Bridge NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF25H120T3
VCES = 1200V
Full - Bridge
IC = 25A @ Tc = 80°C
NPT IGBT Power Module
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
7
8
•
Non Punch Through (NPT) Fast IGBT®
-
-
-
-
-
-
-
-
Low voltage drop
23
Low tail current
Q2
29
Q4
CR2
CR4
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
26
27
4
3
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
30
31
32
-
15
16
R1
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
28 27 26 25
23 22
20 19 18
29
16
Benefits
30
15
•
Outstanding performance at high frequency
operation
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
31
32
14
13
2
3
4
7
8
10 11
12
•
•
•
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
40
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
25
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
100
±20
208
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 6
APT website – http://www.advancedpower.com
APTGF25H120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500µA
1200
V
Tj = 25°C
1
1
3.2
4.0
500
3.7
µA
mA
VGE = 0V
ICES
Zero Gate Voltage Collector Current
VCE = 1200V
Tj = 125°C
Tj = 25°C
Tj = 125°C
2.5
4
VGE =15V
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
IC = 25A
VGE = VCE , IC = 1mA
6
400
V
nA
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
1650
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
250
110
160
10
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC =25A
Qge
Qgc
nC
70
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
60
50
305
30
60
50
346
40
3.5
1.5
ns
VBus = 400V
IC = 25A
RG = 22Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 400V
IC = 25A
Tf
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
RG = 22Ω
Eon
Eoff
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
VR=1200V
250
500
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
Tc = 80°C
Tj = 25°C
Tj = 125°C
25
2.3
1.8
A
V
IF = 25A
2.8
VGE = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
Tj = 125°C
Tj = 25°C
Tj = 125°C
0.13
2.3
6
µs
IF = 25A
VR = 600V
di/dt =800A/µs
Qrr
µC
2 - 6
APT website – http://www.advancedpower.com
APTGF25H120T3
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
68
4080
kΩ
B25/85 T25 = 298.16 K
K
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
°C/W
1
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
V
150
125
100
4.7
°C
-40
Operating Case Temperature
-40
Torque Mounting torque
Wt
To heatsink
M4
N.m
g
Package Weight
110
Package outline
2 8
1 7
1
12
3 - 6
APT website – http://www.advancedpower.com
APTGF25H120T3
Typical Performance Curve
Output Characteristics (VGE=10V)
TJ=25°C
Output characteristiVGE=15V)
80
70
60
50
40
30
20
10
0
20
16
12
8
TJ=25°C
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=125°C
TJ=125°C
4
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
120
100
80
60
40
20
0
18
IC = 25A
TJ = 25°C
VCE =240V
VCE=600V
250µs Pulse Test
< 0.5% Duty cycle
16
14
12
10
8
VCE=960V
6
TJ=125°C
TJ=25°C
4
2
0
0
30
60
90
120
150
180
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 125°C
250µs Pulse Test
250µs Pulse Test
Ic=50A
< 0.5% Duty cycle
< 0.5% Duty cycle
V
GE = 15V
Ic=50A
Ic=25A
Ic=25A
Ic=12.5A
Ic=12.5A
9
10
11
12
13
14
15
16
-50 -25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
60
50
40
30
20
10
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
APT website – http://www.advancedpower.com
APTGF25H120T3
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
75
70
65
60
55
50
400
350
300
250
200
VCE = 600V
RG = 22Ω
VGE=15V,
TJ=125°C
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
G = 22Ω
R
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
50
45
40
35
30
25
20
160
120
80
VCE = 600V
R
G = 22Ω
TJ = 125°C
TJ = 25°C
VGE=15V
40
VCE = 600V, VGE = 15V, RG = 22Ω
0
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
8
4
3
2
1
0
VCE = 600V
TJ=125°C,
VCE = 600V
VGE = 15V
TJ = 125°C
RG = 22Ω
V
GE=15V
RG = 22Ω
6
TJ = 25°C
4
TJ=25°C,
V
GE=15V
2
0
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Minimum Switching Safe Operating Area
5
4
3
2
1
0
60
50
40
30
20
10
0
VCE = 600V
V
GE = 15V
Eon, 25A
Eoff, 25A
TJ= 125°C
0
10
20
30
40
50
60
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
5 - 6
APT website – http://www.advancedpower.com
APTGF25H120T3
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
10000
1000
100
120
VCE = 600V
D = 50%
100
80
60
40
20
0
Cies
R
G = 22Ω
TJ = 125°C
TC= 75°C
ZVS
Coes
Cres
ZCS
Hard
switching
10
0
10
20
30
40
50
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
APT website – http://www.advancedpower.com
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