APTGF25H120T3G_09 [MICROSEMI]
Full - Bridge NPT IGBT Power Module; 全 - 桥NPT IGBT功率模块
| 型号： | APTGF25H120T3G_09 |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF25H120T3G
VCES = 1200V
IC = 25A @ Tc = 80°C
Full - Bridge
NPT IGBT Power Module
Application
13 14
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
Q3
CR1
22
CR3
11
10
18
19
Features
7
8
•
Non Punch Through (NPT) Fast IGBT®
-
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
23
Q2
29
Q4
CR2
CR4
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
26
27
4
3
30
31
R1
32
15
16
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
28 27 26 25
23 22
20 19 18
Internal thermistor for temperature monitoring
29
16
30
15
Benefits
•
Outstanding performance at high frequency
operation
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
31
32
14
13
2
3
4
7
8
10 11
12
•
•
•
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
•
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
40
25
100
±20
208
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 6
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APTGF25H120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
µA
V
V
GE = 0V
CE = 1200V
ICES
Zero Gate Voltage Collector Current
500
2.5
4
3.2
4.0
3.7
V
GE =15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 25A
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
6
V
IGES
Gate – Emitter Leakage Current
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
1650
V
V
GE = 0V
CE = 25V
pF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
250
110
160
10
f = 1MHz
V
GE = 15V
VBus = 600V
IC =25A
nC
Qge
Qgc
Td(on)
Tr
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
70
Inductive Switching (25°C)
V
V
IC = 25A
RG = 22Ω
60
GE = 15V
Bus = 600V
50
ns
Td(off) Turn-off Delay Time
305
Tf
Fall Time
30
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
60
50
V
GE = 15V
ns
VBus = 600V
IC = 25A
RG = 22Ω
Td(off) Turn-off Delay Time
346
40
Tf
Fall Time
V
V
GE = 15V
Bus = 600V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
3.5
1.5
mJ
IC = 25A
RG = 22Ω
Eoff
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VRRM
1200
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
250
IRM
VR=1200V
µA
IF
Forward Current
25
A
V
IF = 25A
VGE = 0V
Tj = 25°C
Tj = 125°C
2.1
1.9
VF
Diode Forward Voltage
Tj = 25°C
Tj = 125°C
Tj = 25°C
95
190
2.1
trr
Reverse Recovery Time
ns
IF = 25A
VR = 600V
di/dt =1000A/µs
Qrr
Er
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
4.5
0.75
1.5
2 - 6
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APTGF25H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B 25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
1.2
RthJC
Junction to Case Thermal Resistance
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 - 6
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APTGF25H120T3G
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
80
70
60
50
40
30
20
10
0
20
16
12
8
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=125°C
TJ=125°C
4
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
18
120
100
80
60
40
20
0
IC = 25A
VCE=240V
VCE=600V
250µs Pulse Test
< 0.5% Duty cycle
16
14
12
10
8
TJ = 25°C
VCE=960V
6
TJ=125°C
TJ=25°C
4
2
0
0
30
60
90
120
150
180
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
TJ = 125°C
250µs Pulse Test
Ic=50A
250µs Pulse Test
< 0.5% Duty cycle
Ic=50A
< 0.5% Duty cycle
VGE = 15V
Ic=25A
Ic=25A
Ic=12.5A
Ic=12.5A
9
10
11
12
13
14
15
16
-50
-25
0
25
50
75
100 125
VGE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
60
50
40
30
20
10
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
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APTGF25H120T3G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
75
70
65
60
55
50
400
350
300
250
200
VCE = 600V
VGE=15V,
TJ=125°C
R
G = 22Ω
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
R
G = 22Ω
5
15
25
35
45
55
5
15
25
35
45
55
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
160
120
80
40
0
50
45
40
35
30
25
20
VCE = 600V
R
G = 22Ω
TJ = 125°C
TJ = 25°C
VGE=15V
VCE = 600V, VGE = 15V, RG = 22Ω
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
I
CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
8
4
3
2
1
0
VCE = 600V
TJ=125°C,
VCE = 600V
TJ = 125°C
R
G = 22Ω
VGE = 15V
V
GE=15V
R
G = 22Ω
6
TJ=25°C,
GE=15V
TJ = 25°C
4
V
2
0
5
15
25
35
45
55
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
5
4
3
2
1
0
60
50
40
30
20
10
0
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 25A
Eoff, 25A
0
10
20
30
40
50
60
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
5 - 6
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APTGF25H120T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
10000
1000
100
120
VCE = 600V
D = 50%
100
80
60
40
20
0
Cies
R
G = 22Ω
TJ = 125°C
TC= 75°C
ZVS
Coes
Cres
Hard
switching
ZCS
10
0
10
20
30
40
50
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
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