APTGF25H120T2G [MICROSEMI]
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES,;
| 型号： | APTGF25H120T2G |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, 栅 |
| 文件： | 总7页 (文件大小：569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF25H120T2G
Full - Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 25A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Pins 5/6/15/16 ; 3/4/17/18 ; 9/10 ; 11/12 must be
shorted together
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (per IGBT)
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
40
25
100
±20
208
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 – 7
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APTGF25H120T2G
Electrical Characteristics (per IGBT)
Symbol Characteristic
Test Conditions
VGE = 0V ; VCE = 1200V
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
250
3.7
µA
V
Tj = 25°C
Tj = 125°C
2.5
4
3.2
4.0
VGE =15V
IC = 25A
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
6
V
IGES
Gate – Emitter Leakage Current
400
nA
Dynamic Characteristics (per IGBT)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Input Capacitance
1650
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
250
110
160
10
VGE = 15V
VBus = 600V
nC
Qge
Gate – Emitter Charge
IC =25A
Qgc
Td(on)
Tr
Gate – Collector Charge
Turn-on Delay Time
Rise Time
70
60
Inductive Switching (25°C)
VGE = 15V
50
ns
VBus = 600V
IC = 25A
RG = 22
Td(off) Turn-off Delay Time
305
Tf
Fall Time
30
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
Td(on)
Tr
Turn-on Delay Time
Rise Time
60
50
ns
Td(off) Turn-off Delay Time
346
40
Tf
Fall Time
RG = 22
V
GE = 15V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
3.5
1.5
VBus = 600V
IC = 25A
RG = 22
mJ
Eoff
Turn-off Switching Energy
V
GE ≤15V ; VBus = 900V
Isc
Short Circuit data
160
A
tp ≤ 10µs ; Tj = 125°C
°C/W
RthJC
Junction to Case Thermal Resistance
0.6
2 – 7
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APTGF25H120T2G
Reverse diode ratings and characteristics (per diode)
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
VRRM
IRM
IF
1200
V
µA
A
Maximum Reverse Leakage Current
DC Forward Current
VR=1200V
100
3.1
Tc = 80°C
Tj = 125°C
25
2.6
3.2
1.8
IF = 25A
IF = 50A
VF
trr
Diode Forward Voltage
Reverse Recovery Time
V
IF = 25A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
320
360
ns
IF = 25A
VR = 667V
di/dt =200A/µs
480
Qrr
Reverse Recovery Charge
nC
1800
°C/W
RthJC
Junction to Case Thermal Resistance
1.4
Temperature sensor NTC
Symbol
R25
Characteristic
Min Typ Max Unit
Resistance @ 25°C
Resistance tolerance
Beta tolerance
22
k
5
3
R25/R25
B/B
%
B 25/100
T25 = 298.16 K
3980
K
R25
RT
T: Thermistor temperature
RT: Thermistor value at T
1
1
25 / 100
exp B
T25
T
Thermal and package characteristics
Symbol Characteristic
Min
4000
-40
-40
-40
2
Typ Max Unit
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
V
150
°C
125
100
3
Operating Case Temperature
Torque Mounting torque
Wt Package Weight
To heatsink
M4
N.m
g
75
3 – 7
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APTGF25H120T2G
Package outline (dimensions in mm)
Typical Performance Curve
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
10000
1000
100
120
VCE = 600V
D = 50%
100
80
60
40
20
0
Cies
R
G = 22Ω
TJ = 125°C
TC= 75°C
ZVS
Coes
Cres
ZCS
Hard
switching
10
0
10
20
30
40
50
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
D = 0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
4 – 7
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APTGF25H120T2G
Transfer Characteristics
Output characteristics (VGE=15V)
250µs Pulse Test
80
60
50
40
30
20
10
0
250µs Pulse Test
< 0.5% Duty cycle
< 0.5% Duty cycle
60
40
20
0
TJ=25°C
TJ=125°C
TJ=125°C
TJ=25°C
0
1
2
3
4
5
6
7
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Turn-On Energy Loss vs Collector Current
Switching Energy Losses vs Gate Resistance
5
10
VCE = 600V
VCE = 600V
VGE = 15V
Eon, 25A
TJ= 125°C
TJ=125°C,
RG = 22Ω
4
3
2
1
0
8
6
4
2
0
VGE=15V
TJ=25°C,
VGE=15V
Eoff, 25A
5
15
25
35
45
55
0
10
20
30
40
50
60
I
CE, Collector to Emitter Current (A)
Gate Resistance (Ohms)
Turn-Off Energy Loss vs Collector Current
Gate Charge
4
18
16
14
12
10
8
IC = 25A
VCE=240V
VCE=600V
VCE = 600V
TJ = 25°C
TJ = 125°C
V
GE = 15V
3
2
1
0
RG = 22Ω
VCE=960V
TJ = 25°C
6
4
2
0
0
30
60
90
120
150
180
5
15
25
35
45
55
ICE, Collector to Emitter Current (A)
Gate Charge (nC)
Reverse Bias Safe Operating Area
60
50
40
30
20
10
0
0
400
800
1200
V
CE, Collector to Emitter Voltage (V)
5 – 7
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APTGF25H120T2G
Typical diode Performance Curve (per diode)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.6
1.4
1.2
1
D = 0.9
0.7
0.5
0.8
0.6
0.4
0.2
0.3
0.1
Single Pulse
0.01
0.05
0
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
60
50
40
30
20
10
0
TJ=125°C
TJ=25°C
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
6 – 7
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APTGF25H120T2G
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