APTGT200DA170D3G [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块
| 型号： | APTGT200DA170D3G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT200A120D3G
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
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•
•
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Welding converters
3
Q1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
5
Features
1
Q2
•
Trench + Field Stop IGBT Technology
6
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-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
7
2
Low leakage current
RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
300
200
400
±20
1050
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 400A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTGT200A120D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
500
2.1
µA
Tj = 25°C
1.4
5.0
1.7
2.0
5.8
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 8mA
VGE = 20V, VCE = 0V
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Crss
Input Capacitance
Reverse Transfer Capacitance
VGE = 0V,VCE = 25V
f = 1MHz
14
0.6
nF
VGE=±15V, IC=200A
VCE=600V
QG
Gate charge
1.9
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
250
90
V
V
GE = ±15V
Bus = 600V
ns
Td(off) Turn-off Delay Time
550
130
IC = 200A
RG = 3.6Ω
Tf
Fall Time
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
300
100
650
V
V
GE = ±15V
Bus = 600V
ns
Td(off) Turn-off Delay Time
IC = 200A
Tf
Fall Time
180
15
RG = 3.6Ω
V
V
GE = ±15V
Bus = 600V
Eon
Turn on Energy
Tj = 125°C
Tj = 125°C
mJ
A
IC = 200A
RG = 3.6Ω
Eoff
Isc
Turn off Energy
Short Circuit data
35
V
GE ≤15V ; VBus = 900V
800
tp ≤ 10µs ; Tj = 125°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
1200
V
Tj = 25°C
750
1000
IRRM
VR=1200V
µA
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
IF
200
1.6
1.6
A
V
IF = 200A
2.1
VF
Diode Forward Voltage
V
GE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
170
280
22
trr
Reverse Recovery Time
ns
IF = 200A
VR = 600V
di/dt =3500A/µs
Qrr
Err
Reverse Recovery Charge
Reverse Recovery Energy
µC
mJ
Tj = 125°C
Tj = 25°C
Tj = 125°C
40
9
16
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APTGT200A120D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.12
0.20
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
150
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
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APTGT200A120D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
400
400
300
200
100
0
TJ = 125°C
TJ=25°C
VGE=17V
VGE=13V
VGE=15V
VGE=9V
300
200
100
0
TJ=125°C
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
4
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
400
300
200
100
0
75
60
45
30
15
0
VCE = 600V
TJ=25°C
Eoff
VGE = 15V
R
G = 3.6 Ω
TJ = 125°C
Eon
Err
TJ=125°C
0
100
200
300
400
1500
10
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
70
Reverse Bias Safe Operating Area
500
400
300
200
100
0
VCE = 600V
GE =15V
V
60
50
40
30
20
10
0
Eon
IC = 200A
TJ = 125°C
Eoff
VGE=15V
TJ=125°C
RG=3.6 Ω
Err
0
300
600
900
CE (V)
1200
0
4
8
12
16
20
24
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12
0.1
IGBT
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
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APTGT200A120D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
50
40
30
20
10
0
400
VCE=600V
D=50%
RG=3.6 Ω
TJ=125°C
TC=75°C
TJ=25°C
300
200
100
0
ZCS
ZVS
Hard
Switching
TJ=125°C
0
0.4
0.8
1.2
1.6
2
2.4
0
40
80 120 160 200 240 280
C (A)
VF (V)
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
Diode
0.9
0.7
0.15
0.1
0.5
0.3
0.05
0
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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