APTGT50H120TG [MICROSEMI]
Full - Bridge Fast Trench + Field Stop IGBT Power Module; 全 - 桥快速沟道+场截止IGBT功率模块
| 型号： | APTGT50H120TG |
| 厂家： | 
Microsemi |
| 描述： | Full - Bridge Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT50H120TG
VCES = 1200V
Full - Bridge
Fast Trench + Field Stop IGBT®
IC = 50A @ Tc = 80°C
Application
VBUS
•
•
•
•
Welding converters
Q3
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G3
G1
E1
Features
OUT1
OUT2
E3
•
Fast Trench + Field Stop IGBT® Technology
Q2
-
-
-
-
-
-
-
-
Low voltage drop
Q4
Low tail current
G4
E4
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
E2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
NTC1
NTC2
0/VBU S
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
Benefits
G3
E3
G4
E4
OUT2
OUT1
•
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
VBUS
0/VBUS
E1
G1
E2
G2
NTC2
NTC1
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
TC = 80°C
TC = 25°C
75
50
100
±20
277
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 100A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT50H120TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
250
2.1
µA
Tj = 25°C
Tj = 125°C
1.7
2.0
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 50A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
3600
pF
Output Capacitance
190
160
90
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
30
420
ns
VBus = 600V
IC = 50A
70
90
RG = 18 Ω
Inductive Switching (125°C)
VGE = 15V
50
520
ns
VBus = 600V
IC = 50A
Tf
Fall Time
90
RG = 18 Ω
VGE = 15V
Tj = 125°C
VBus = 600V
Eon
Turn-on Switching Energy
5
mJ
IC = 50A
Eoff
Turn-off Switching Energy
Tj = 125°C
RG = 18 Ω
5.5
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1200
V
Tj = 25°C
VR=1200V
250
500
IRM
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
50
1.4
1.3
150
250
4.5
9
2.1
4.2
A
V
Tj = 25°C
1.9
VF
Diode Forward Voltage
IF = 50A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 50A
Tj = 25°C
VR = 600V
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =2000A/µs
2 - 5
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APTGT50H120TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25 Resistance @ 25°C
B25/85 T25 = 298.15 K
Min Typ Max Unit
50
kΩ
K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.45
RthJC
Junction to Case Thermal Resistance
°C/W
0.58
VISOL
TJ
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
Wt
To Heatsink
M5
N.m
g
Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONSMARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on
www.microsemi.com
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APTGT50H120TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
80
60
40
20
0
100
80
60
40
20
0
TJ = 125°C
VGE=17V
TJ=25°C
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
80
60
40
20
0
12
10
8
VCE = 600V
VGE = 15V
TJ=25°C
Eon
RG = 18Ω
TJ=125°C
TJ = 125°C
Eon
6
Eoff
Er
4
TJ=125°C
2
0
0
20
40
60
80
100
5
6
7
8
9
10
11
12
I
C (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
120
100
80
60
40
20
0
VCE = 600V
VGE =15V
C = 50A
TJ = 125°C
Eon
Eoff
Er
10
8
I
6
4
VGE=15V
TJ=125°C
RG=18Ω
2
0
0
10 20 30 40 50 60 70 80
0
300
600
900
CE (V)
1200
1500
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.3
0.2
0.1
0
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT50H120TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
150
125
100
75
80
70
60
50
40
30
20
10
0
VCE=600V
D=50%
RG=18Ω
TJ=125°C
TC=75°C
ZVS
TJ=125°C
ZCS
50
TJ=125°C
TJ=25°C
hard
switching
25
0
0
10 20 30 40 50 60 70 80
0
0.5
1
1.5
F (V)
2
2.5
V
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.7
Diode
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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